MICROWAVE POWER MMIC AMPLIFIER TMD1414-2C MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain Supply Voltage VDD V 10 Gate Supply Voltage VGG V -10 Input Power Pin dBm 20 Flange Temperature Tf °C -40 ∼ +90 Storage Temperature Tstg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain SYMBOL CONDITIONS UNIT MIN. TYP. MAX. f GHz 13.75 14.5 P1dB dBm 32.0 34.5 dB 21.0 26.0 dB ±1.0 Compression Point 1dB Gain Compression G1dB Point VDD=7V VGG=-5V Gain Flatness ∆G Drain Current IDD A 1.4 1.8 Power Added Efficiency ηadd % 29 uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006 TMD1414-2C PACKAGE OUTLINE (7-BA15A) 4-C1.5 Unit in mm n l m 17.8 ± 0.2 o • T TMD 1414 - 2C 13.4 ± 0.2 k j:VGG k: RF Input lm: VDD n: RF Output o: Vdet 8.8 ± 0.2 j 2.6 ± 0.2 2.6 ± 0.2 0.25 ± 0.1 2.4 Two VDD pins do not have to be biased at the same time, but at least one of the pins has to be biased. In case only one pin is biased, 4-R0.5 2.4 MAX. 1.004 ± 0.2 0.75 ± 0.2 0.1 ± 0.05 8.35 ± 0.2 0.254 ± 0.2 2.0 ± 0.5 The Other pin has to be opened. 2.0 ± 0.5 Recommended Bias Configuration 10kΩ 3,4:VDD 6:Vdet 0.5pF 2:RF Input 0.5-1pF 1000pF 5:RF Output TMD1414-2C 50ΩMatching 50ΩMatching GND : Base Plate 1:VGG 47μF 47μF 0.5pF 1000pF 2