MICROWAVE POWER MMIC AMPLIFIER TMD0305-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 3.4GHz to 5.1GHz HIGH GAIN G1dB=22.0dB at 3.4GHz to 5.1GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25°C ) SYMBOL UNIT RATING Drain Supply Voltage VDD V 15 Gate Supply Voltage VGG V -10 Input Power Pin dBm 25 Flange Temperature Tf °C -30 ∼ +80 Storage Temperature Tstg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Gain P1dB G1dB Input VSWR UNIT MIN. TYP. MAX. dBm 32.0 33.0 ⎯ = 10V dB 20.0 22.0 ⎯ A ⎯ 1.6 1.9 ⎯ ⎯ ⎯ 3.0 VGG= -5V Compression Point Drain Current* CONDITIONS VDD1=VDD2=VDD3 Compression Point Power Gain at 1dB Gain ( Ta= 25°C ) IDD VSWRin f = 3.4 – 5.1GHz * IDD = IDD1 + IDD2 + IDD3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Mar.2006 TMD0305-2 PACKAGE OUTLINE (2-11E1A) C2.0 2.5 ± 0.3 Unit in mm 10 ±0.3 15 ±0.3 18 ±0.3 0.5 ±0.2 1.0 ±0.3 2.5MAX. 6-2.54 ±0.2 8-0.4±0.1 : VDD1 : RF IN : VDD2 : VGG : RF OUT : No Connection : VDD3 : GND : VDD3 9 7-R0.4 2.0MIN. 0.5 ±0.2 11 ± 0.3 0.1 ±0.05 2.0MIN. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. Flanges of devices should be attached using screws and washers. torque is 0.18-0.20 N·m. 2 Recommended