TOSHIBA TMD0305-2

MICROWAVE POWER MMIC AMPLIFIER
TMD0305-2
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=33.0dBm at 3.4GHz to 5.1GHz
HIGH GAIN
G1dB=22.0dB at 3.4GHz to 5.1GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
( Ta= 25°C )
SYMBOL
UNIT
RATING
Drain Supply Voltage
VDD
V
15
Gate Supply Voltage
VGG
V
-10
Input Power
Pin
dBm
25
Flange Temperature
Tf
°C
-30 ∼ +80
Storage Temperature
Tstg
°C
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
SYMBOL
Output Power at 1dB Gain
P1dB
G1dB
Input VSWR
UNIT
MIN.
TYP. MAX.
dBm
32.0
33.0
⎯
= 10V
dB
20.0
22.0
⎯
A
⎯
1.6
1.9
⎯
⎯
⎯
3.0
VGG= -5V
Compression Point
Drain Current*
CONDITIONS
VDD1=VDD2=VDD3
Compression Point
Power Gain at 1dB Gain
( Ta= 25°C )
IDD
VSWRin
f = 3.4 – 5.1GHz
* IDD = IDD1 + IDD2 + IDD3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006
TMD0305-2
PACKAGE OUTLINE (2-11E1A)
C2.0
2.5 ± 0.3
Unit in mm
10 ±0.3
15 ±0.3
18 ±0.3
0.5 ±0.2
1.0 ±0.3
2.5MAX.
6-2.54 ±0.2
8-0.4±0.1
: VDD1
: RF IN
: VDD2
: VGG
: RF OUT
: No Connection
: VDD3
: GND
: VDD3
9
7-R0.4
2.0MIN.
0.5 ±0.2
11 ± 0.3
0.1 ±0.05
2.0MIN.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
Flanges of devices should be attached using screws and washers.
torque is 0.18-0.20 N·m.
2
Recommended