MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES BROAD BAND INTERNALLY MATCHED HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25°°C ) SYMBOL UNIT RATING Drain Supply Voltage VDD V 15 Gate Supply Voltage VGG V -10 Input Power Pin W 0.1 Flange Temperature Tf °C -30 ∼ +80 Storage Temperature Tstg °C -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°°C ) CHARACTERISTICS SYMBOL Output Power at 1dB P1dB UNIT MIN. TYP. MAX. dBm 32.0 33.0 dB 20.0 22.0 dB ±1.5 dB ±2.0 VDD1=VDD2=VDD3 Compression Point Power Gain at 1dB CONDITION G1dB = 10V VGG= -5V Compression Point Gain Flatness (1)* ∆G1 Gain Flatness (2)** ∆G2 Drain Current*** IDD A 1.60 1.90 VSWRi 3.0 Input VSWR f = 5.1 – 7.2GHz * ∆G1 at f = 5.9 – 7.2GHz ** ∆G2 at f = 5.1 – 7.2GHz *** IDD = IDD1 + IDD2 + IDD3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. June 1998