TOSHIBA TMD0507-2A

MICROWAVE POWER MMIC AMPLIFIER
TMD0507-2A
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
BROAD BAND INTERNALLY MATCHED
HIGH POWER
P1dB=33.0dBm at 5.1GHz to 7.2GHz
HIGH GAIN
G1dB=22.0dB at 5.1GHz to 7.2GHz
HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
( Ta= 25°°C )
SYMBOL
UNIT
RATING
Drain Supply Voltage
VDD
V
15
Gate Supply Voltage
VGG
V
-10
Input Power
Pin
W
0.1
Flange Temperature
Tf
°C
-30 ∼ +80
Storage Temperature
Tstg
°C
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°°C )
CHARACTERISTICS
SYMBOL
Output Power at 1dB
P1dB
UNIT MIN. TYP. MAX.
dBm
32.0
33.0

dB
20.0
22.0

dB


±1.5
dB


±2.0
VDD1=VDD2=VDD3
Compression Point
Power Gain at 1dB
CONDITION
G1dB
= 10V
VGG= -5V
Compression Point
Gain Flatness (1)*
∆G1
Gain Flatness (2)**
∆G2
Drain Current***
IDD
A

1.60
1.90
VSWRi



3.0
Input VSWR
f = 5.1 – 7.2GHz
* ∆G1 at f = 5.9 – 7.2GHz
** ∆G2 at f = 5.1 – 7.2GHz
*** IDD = IDD1 + IDD2 + IDD3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
June 1998