SSM5G11TU Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • 4-V drive • Combined a P-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS ± 20 V DC ID -1.4 Pulse IDP -2.8 Drain current Drain power dissipation PD (Note 1) Channel temperature Tch A 500 mW 150 °C Schottky Barrier Diode (Ta = 25°C) Characteristics UFV Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current IF (AV) 0.7 IFSM Tj JEDEC ― A JEITA ― 2 (50Hz) A TOSHIBA 125 °C Symbol Rating Unit Tstg −55 to125 °C Peak one cycle surge forward current Junction temperature 2-2R1A Weight: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Marking 5 Equivalent Circuit (top view) 4 5 3 1 4 KEV 1 2 2 1 3 2008-09-27 SSM5G11TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -30 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +20 V -15 ⎯ ⎯ Drain cutoff current IDSS VDS = -30 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS Drain-source breakdown voltage VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±1 μA -0.8 ⎯ -2.0 V (Note 2) 1.0 2.0 ⎯ S ID = -1.0 A, VGS = -10 V (Note 2) ⎯ 175 226 ID = -0.5 A, VGS = -4 V (Note 2) ⎯ 290 403 ⎯ 120 ⎯ ⎯ 32 ⎯ ⎯ 21 ⎯ ⎯ 2.9 ⎯ ⎯ 2.2 ⎯ ⎯ 0.7 ⎯ Vth VDS = -5 V, ID = -1 mA Forward transfer admittance ⏐Yfs⏐ VDS = -5 V, ID = -1.0 A Drain-source ON-resistance RDS (ON) Gate threshold voltage Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Switching time VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, ID= -1.4 A VGS = -10 V Turn-on time ton VDD = -15 V, ID = -1 A, ⎯ 12 ⎯ Turn-off time toff VGS = 0 to -4 V, RG = 10 Ω ⎯ 8.5 ⎯ ID = 1.4 A, VGS = 0 V ⎯ 0.87 1.2 Drain-source forward voltage VDSF V (Note 2) mΩ pF nC ns V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0V OUT 0 IN RG −4 V 10 μs VDD =− 15 V RG = 10 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C RL 10% 90% −4 V VDD (c) VOUT VDS (ON) 90% 10% VDD tr ton tf toff Usage Considerations Vth can be expressed as voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 2 2008-09-27 SSM5G11TU Schottky Barrier Diode Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage VFM (1) IF = 0.5 A ⎯ 0.34 0.41 V Peak forward voltage VFM (2) IF = 0.7 A ⎯ 0.37 0.44 V IRRM VR = 15 V ⎯ 60 200 μA VR = 0 V, f = 1 MHz ⎯ 139 ⎯ pF Repetitive peak reverse current Junction capacitance CT Precaution The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus, excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both forward and reverse loss into consideration. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 3 2008-09-27 SSM5G11TU MOSFET ID – VDS Common Source Ta = 25 °C ID – VGS -5.0 V -3.5 V -1 -2 ID ID -3.3 V -3.0 V -1 -0.1 Drain current Drain current Common Source VDS = -5 V -4.0 V (A) -10 V -10 (A) -3 -2.8 V Ta = 100 °C -0.01 25 °C − 25 °C -0.001 VGS =- 2.5V 0 0 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS -0.0001 0 -1.0 -1.0 (V) RDS (ON) – VGS (V) RDS (ON) – ID Common Source Ta = 25°C Common Source 800 600 400 25 °C Ta = 100 °C 200 Drain-source ON-resistance RDS (ON) (mΩ) Drain-source ON-resistance RDS (ON) (mΩ) VGS 1000 ID =−1.0A 800 600 400 -4.0 V 200 VGS = -10 V − 25 °C 0 -10 0 -20 Gate-source voltage VGS 0 (V) RDS (ON) – Ta (A) Vth – Ta Common Source Vth (V) Gate threshold voltage 800 600 ID = -0.5 A / VGS = -4.0 V -1.0 A / -10 V 200 0 −50 ID -3 -2.0 Common Source 400 -2 -1 Drain current 1000 Drain-source ON-resistance RDS (ON) (mΩ) -4.0 -3.0 Gate-source voltage 1000 0 -2.0 0 50 Ambient temperature 100 Ta VDS = -5.0 V ID = -1 mA -1.0 0 −50 150 (°C) 0 50 Ambient temperature 4 100 Ta 150 (°C) 2008-09-27 SSM5G11TU IDR – VDS |Yfs| – ID 10 10 Common Source Common Source VGS = 0 V (A) VDS = -5.0 V IDR Ta = 25°C 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) MOSFET 1 0.3 D 1 IDR G S 25 °C 0.1 Ta =100 °C 0.01 −25 °C 0.1 -0.01 -1 -0.1 Drain current ID 0.001 0 -10 0.5 (A) Drain-source voltage C – VDS VDS Common Source VDD = -15 V VGS = 0 to -4.0 V Ta = 25 °C RG = 10 Ω 500 (ns) t Ciss 100 Switching time Capacitance C (pF) 300 50 30 Coss Crss 10 Common Source 5 Ta = 25°C f = 1 MHz VGS = 0 V 3 1 -0.1 -1 -10 Drain-source voltage VDS toff 100 tf 10 ton tr 1 -0.01 -100 (V) (V) t – ID 1000 1000 1.5 1.0 -0.1 Drain current -1 ID -10 (A) Dynamic Input Characteristic -10 ID = -1.4 A -8 Ta = 25°C Gate-Source voltage VGS (V) Common Source -6 VDD = -15 V -4 VDD = -24 V -2 0 0 1 2 Total Gate Charge 3 4 Qg 5 (nC) 5 2008-09-27 SSM5G11TU Schottky Barrier Diode PF(AV) – IF(AV) IF – V F 0.5 Average forward power dissipation PF (AV) (W) Instantaneous forward current IF (mA) 1000 100 25 °C 10 1 DC 0.3 α = 30° 0.1 0.3 0.2 VF 90 120 Rectangular waveform 0.1 0° α 360° Conduction angle α 0.5 0.4 60 180 0.2 0 0.1 0 Instantaneous forward voltage 0 0.2 0.4 0.6 1.0 0.8 Average forward current (V) 1.2 IF (AV) (A) CT – VR Ta max – IF (AV) (typical) 100 140 f = 1 MHz Ta = 25°C (pF) 120 CT 100 80 DC Capacitance Maximum allowable temperature Ta max (°C) 0.4 60 40 10 20 0 0 0.2 0.4 0.6 0.8 Average forward current 1.0 1.2 1.4 1 IF (AV) (A) 1 10 Reverse voltage 6 100 VR (V) 2008-09-27 SSM5G11TU Shottky Barrier Diode IR – V R IR – Tj 1000 (typical) 1000 100 30 20 100 15 10 IR IR (μA) (mA) Pulse test Reverse current Reverse current 10 25 °C 10 5 1 0.1 VR = 3 V 0.01 1 0 10 5 15 Reverse voltage 20 VR 25 Average reverse power dissipation PR (AV) (W) 0 50 Junction temperature (V) PR (AV) – VR 8 30 100 Tj 150 (°C) (typical) Rectangular waveform 360° 0° 6 VR 300 α Conduction angle α Tj = 125°C 4 DC 240 180 2 120 α = 60° 0 0 5 10 Reverse voltage 15 VR 20 (V) 7 2008-09-27 SSM5G11TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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