TOSHIBA SSM6L35FE

SSM6L35FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FE
○ High-Speed Switching Applications
○ Analog Switch Applications
•
Unit: mm
1.6±0.05
1.2±0.05
N-ch: 1.2-V drive
: Ron =
8 Ω (max) (@VGS = 1.5 V)
: Ron =
4 Ω (max) (@VGS = 2.5 V)
: Ron =
3 Ω (max) (@VGS = 4.0 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V)
: Ron = 11 Ω (max) (@VGS = -2.5 V)
: Ron =
8 Ω (max) (@VGS = -4.0 V)
2
5
3
4
1.Source1 4.Source2
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
6
0.55±0.05
Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V)
1
ES6
2.Gate1
3.Drain2
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
JEDEC
-
Gate–source voltage
VGSS
±10
V
JEITA
-
DC
ID
180
Pulse
IDP
360
Drain current
0.2±0.05
Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V)
0.12±0.05
N-ch, P-ch, 2-in-1
•
1.0±0.05
0.5 0.5
•
1.6±0.05
P-ch: 1.2-V drive
mA
TOSHIBA
5.Gate2
6.Drain1
2-2N1D
Weight: 3.0 mg (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
-20
V
Gate–source voltage
VGSS
±10
V
DC
ID
-100
Pulse
IDP
-200
Drain current
mA
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristic
Symbol
Rating
Unit
PD(Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain power dissipation
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
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SSM6L35FE
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Symbol
Typ.
Max
Unit
VGS = ±10 V, VDS = 0V
⎯
⎯
±10
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0V
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0V
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
⏐Yfs⏐
VDS = 3 V, ID = 50 mA
(Note 2)
115
⎯
⎯
mS
ID = 50 mA, VGS = 4 V
(Note 2)
⎯
1.5
3
ID = 50 mA, VGS = 2.5 V
(Note 2)
⎯
2
4
ID = 5 mA, VGS = 1.5 V
(Note 2)
⎯
3
8
ID = 5 mA, VGS = 1.2 V
(Note 2)
⎯
5
20
⎯
9.5
⎯
⎯
4.1
⎯
⎯
9.5
⎯
⎯
115
⎯
⎯
300
⎯
⎯
-0.9
-1.2
V
Min
Typ.
Max
Unit
RDS (ON)
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Turn-on time
ton
Turn-off time
toff
Drain–source forward voltage
Min
IGSS
Input capacitance
Switching time
Test Condition
VDS = 3 V, VGS = 0V, f = 1 MHz
VDD = 3 V, ID = 50 mA,
VGS = 0 to 2.5 V
ID = - 180 mA, VGS = 0V
VDSF
(Note 2)
Ω
pF
ns
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Symbol
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) DSS
ID = -0.1 mA, VGS = 0 V
-20
⎯
⎯
V
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.4
⎯
-1.0
V
⏐Yfs⏐
VDS = -3 V, ID = -50 mA
(Note 2)
77
⎯
⎯
mS
ID = -50 mA, VGS = -4 V
(Note 2)
⎯
4.3
8
ID = -50 mA, VGS = -2.5 V
(Note 2)
⎯
5.6
11
ID = -5 mA, VGS = -1.5 V
(Note 2)
⎯
8.2
22
ID = -2 mA, VGS = -1.2 V
(Note 2)
⎯
11
44
⎯
12.2
⎯
⎯
6.5
⎯
⎯
10.4
⎯
⎯
175
⎯
⎯
251
⎯
⎯
0.83
1.2
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Test Condition
VDS = -3 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
Turn-off time
toff
VDD = -3 V, ID = -50 mA,
VGS = 0 to -2.5 V
VDSF
ID = 100 mA, VGS = 0 V
Drain–source forward voltage
(Note 2)
Ω
pF
ns
V
Note 2: Pulse test
Marking
6
Equivalent Circuit (top view)
5
4
6
LL3
1
2
5
Q1
3
1
4
Q2
2
3
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SSM6L35FE
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
90%
OUT
2.5 V
IN
0V
50 Ω
0
10%
RL
10 μs
VDD
(c) VOUT
VDD = 3 V
D.U. ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
10%
90%
VDS (ON)
tr
tf
ton
toff
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5V
10 μs
50Ω
−2.5 V
RL
VDD
(c) VOUT
VDD = -3 V
D.U. ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Q1 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of
the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2
of the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6L35FE
Q1 (N-ch MOSFET)
ID – VDS
ID – VGS
1000
400
10 V
4V
Common Source
2.5 V
Common Source
(mA)
VDS = 3 V
300
200
Drain current
Drain current
ID
1.8 V
ID
(mA)
Ta = 25°C
1.5 V
100
VGS = 1.2 V
0
0
0.5
1
1.5
Drain–source voltage
VDS
100
Ta = 100°C
10
25°C
−25°C
1
0.1
0.01
0
2
1
(V)
Gate–source voltage
RDS (ON) – VGS
3
VGS
(V)
RDS (ON) – VGS
10
10
Common Source
Common Source
ID = 5 mA
ID = 50 mA
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
2
5
25°C
Ta = 100°C
5
25°C
Ta = 100°C
−25°C
0
0
2
4
6
8
Gate–source voltage
VGS
−25°C
0
0
10
2
(V)
4
Gate–source voltage
RDS (ON) – ID
10
Common Source
(V)
Common Source
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
VGS
10
RDS (ON) – Ta
VGS = 1.2 V
1.5 V
2.5 V
5
VGS = 1.2 V, ID = 5 mA
1.5 V, 5 mA
2.5 V, 50 mA
4V
0
1
8
10
Ta = 25°C
5
6
4 V, 50 mA
10
Drain current
100
ID
0
−50
1000
0
50
Ambient temperature
(mA)
4
100
Ta
150
(°C)
2008-03-21
SSM6L35FE
Q1 (N-ch MOSFET)
⎪Yfs⎪ – ID
Forward transfer admittance
⎪Yfs⎪
Common Source
ID = 1 mA
VDS = 3 V
Vth (V)
Gate threshold voltage
(mS)
Vth – Ta
1.0
0.5
0
−50
0
50
100
Ambient temperature
Ta
150
1000
500
300
100
50
30
10
5
Common Source
VDS = 3 V
Ta = 25°C
3
1
1
10
Drain current
(°C)
IDR – VDS
50
(pF)
D
IDR
25°C
S
Ta = 100°C
1
C
G
(mA)
C – VDS
Capacitance
Drain reverse current
10
ID
1000
100
Common Source
VGS = 0 V
100
IDR
(mA)
1000
100
−25°C
0.1
10
Ciss
5
Coss
Common Source
VGS = 0 V
f = 1 MHz
Crss
Ta = 25°C
1
0.01
0
−0.5
−1
Drain–source voltage
0.1
0.5
1
5
10
50
100
−1.5
VDS
(V)
Drain–source voltage
VDS
(V)
t – ID
5000
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
(ns)
1000
t
500
Switching time
3000 toff
300
100
tf
ton
50
30
10
0.1
tr
1
10
Drain current
100
ID
1000
(mA)
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SSM6L35FE
Q2 (P-ch MOSFET)
ID – VDS
ID – VGS
-250
-1000
Common Source
(mA)
-100
(mA)
-2.5V
ID
-150
-1.8V
Drain current
ID
Drain current
VDS = -3V
Ta = 25°C
-4V
-10V
-200
-100
-1.5V
-50
VGS=-1.2V
-2
-1.5
-1
-0.5
Drain–source voltage
VDS
Ta = 100°C
-10
25°C
−25°C
-1
-0.1
-0.01
0
0
0
Common Source
(V)
-1
Gate–source voltage
RDS (ON) – VGS
20
-2
VGS
(V)
RDS (ON) – VGS
15
Common Source
Common Source
ID = -50 mA
Drain–source ON-resistance
RDS (ON) (Ω)
ID = -5 mA
Drain–source ON-resistance
RDS (ON) (Ω)
-3
15
10
25℃
Ta=100℃
5
10
25℃
Ta=100℃
5
-25℃
-25℃
0
0
-2
-4
-6
Gate–source voltage
-8
VGS
0
-10
0
(V)
-2
-4
-6
Gate–source voltage
-10
-8
VGS
(V)
RDS (ON) – Ta
RDS (ON) – ID
20
20
Common Source
Common Source
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
Ta = 25°C
15
VGS = -1.2 V
10
-1.5 V
-2.5 V
5
-4 V
0
-1
-10
Drain current
-100
ID
-1.5 V, -5mA
10
(mA)
-2.5 V, -50mA
-4V, -50mA
5
0
−50
-1000
VGS =−1.2 V, ID=-2mA
15
0
50
Ambient temperature
6
100
Ta
150
(°C)
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SSM6L35FE
Q2 (P-ch MOSFET)
⎪Yfs⎪ – ID
Common Source
ID = -1 mA
-0.6
-0.4
-0.2
0
−50
0
50
100
Ambient temperature
Ta
1000
⎪Yfs⎪
VDS = -3 V
-0.8
Forward transfer admittance
Vth (V)
Gate threshold voltage
(mS)
Vth – Ta
-1
150
100
10
Common Source
VDS = -3 V
Ta = 25°C
1
-1
(°C)
Drain current
IDR – VDS
VGS = 0 V
100
(pF)
D
G
IDR
C
10
S
Capacitance
Drain reverse current
(mA)
C – VDS
25°C
1
Ta=100℃
0.1
-25°C
0.01
0
0.2
0.4
0.6
0.8
Drain–source voltage
1
VDS
1.2
10
Ciss
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
-0.1
1.4
-1
PD * (mW)
(ns)
Common Source
VDD = -3 V
VGS = 0 to -2.5 V
Ta = 25°C
t
Drain Power Dissipation
1000
tf
ton
tr
10
-0.1
-1
-10
Drain current
VDS
-100
(V)
PD *– Ta
toff
100
-10
Drain–source voltage
(V)
t – ID
10000
Switching time
ID
-1000
100
Common Source
IDR
(mA)
1000
-100
-10
-100
ID
250
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
200
150
100
50
0
-1000
0
*:Total Rating
(mA)
7
20
40
60
80
100
Ambient temperature
Ta
120
140
160
(°C)
2008-03-21
SSM6L35FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2008-03-21