TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 V (Note 1) ID 8 Pulse (t = 1 ms) (Note 1) IDP 32 Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 416 mJ Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current 1: Gate 2: Drain 3: Source A JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 11.5 mH, RG = 25 Ω, IAR = 8 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2009-04-09 TK8A65D Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 650 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 0.7 0.84 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 4 A 1.3 4.5 ⎯ S Input capacitance Ciss ⎯ 1350 ⎯ Reverse transfer capacitance Crss ⎯ 6 ⎯ Output capacitance Coss ⎯ 135 ⎯ VOUT ⎯ 22 ⎯ RL = 50 Ω ⎯ 55 ⎯ ⎯ 15 ⎯ ⎯ 100 ⎯ ⎯ 25 ⎯ ⎯ 16 ⎯ ⎯ 9 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 4 A 10 V VGS 0V tr tf Turn-off time VDD ≈ 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 8 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 8 A (Note 1) IDRP ⎯ ⎯ ⎯ 32 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 8 A, VGS = 0 V, ⎯ 1300 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 12 ⎯ μC Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K8A65D Part No. (or abbreviation code) Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 4 2 2009-04-09 TK8A65D ID – VDS 10 COMMON SOURCE Tc = 25°C PULSE TEST 10 8 6 7 (A) 8 ID – VDS 20 6.75 DRAIN CURRENT ID DRAIN CURRENT ID (A) 10 6.5 6.25 4 6 2 5.5 9 16 COMMON SOURCE Tc = 25°C 8 PULSE TEST 7.5 12 7 8 6.5 6 4 VGS = 5 V 0 0 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS VGS = 5 V 0 0 10 10 (V) 20 VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST 12 8 25 100 4 Tc = −55 °C 0 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 10 8 8 6 4 4 2 ID = 2 A 0 0 4 8 (V) 12 16 VGS 20 (V) RDS (ON) – ID 10 COMMON SOURCE VDS = 10 V PULSE TEST DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) ⎪Yfs⎪ – ID 10 Tc = −55 °C 25 100 1 1 (V) COMMON SOURCE Tc = 25℃ PULSE TEST GATE-SOURCE VOLTAGE 100 0.1 0.1 VDS 50 VDS – VGS DRAIN-SOURCE VOLTAGE (A) DRAIN CURRENT ID 16 40 DRAIN-SOURCE VOLTAGE ID – VGS 20 30 10 DRAIN CURRENT ID COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 0.1 100 (A) VGS = 10, 15 V 1 10 DRAIN CURRENT ID 3 100 (A) 2009-04-09 TK8A65D RDS (ON) – Tc IDR – VDS 100 COMMON SOURCE VGS = 10 V 2.5 PULSE TEST DRAIN REVERSE CURRENT IDR (A) 2 8 1.5 4 1 ID = 2 A 0.5 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 5 3 −40 0 40 80 CASE TEMPERATURE 120 Tc 0.1 0 160 (°C) −0.2 −0.4 CAPACITANCE – VDS GATE THRESHOLD VOLTAGE Vth (V) −1.0 −1.2 VDS −1.4 (V) Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 10 3 2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 −80 100 VDS 4 (V) −40 VDS (V) DRAIN-SOURCE VOLTAGE 60 40 20 120 CASE TEMPERATURE 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 80 80 40 CASE TEMPERATURE PD – Tc 40 0 160 Tc 200 (°C) 500 20 VDS 400 16 200 300 400 200 8 VGS 100 0 0 COMMON SOURCE ID = 8 A Tc = 25°C 4 PULSE TEST 10 20 TOTAL GATE CHARGE 4 12 VDD = 100 V 0 40 30 Qg (V) (pF) C CAPACITANCE Coss 100 DRAIN-SOURCE VOLTAGE DRAIN POWER DISSIPATION PD (W) −0.8 Vth – Tc Ciss 0 0 −0.6 5 1000 1 0.1 VGS = 0, −1 V DRAIN-SOURCE VOLTAGE 10000 10 1 VGS 0 −80 GATE-SOURCE VOLTAGE DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 3 (nC) 2009-04-09 TK8A65D NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 SINGLE PULSE t 0.01 T 0.01 Duty = t/T Rth (ch-c) = 2.78 °C/W 0.001 10μ 100μ 1m 10m PULSE WIDTH 100m 1 10 tw (s) SAFE OPERATING AREA EAS – Tch 500 100 ID max (pulsed) * AVALANCHE ENERGY EAS (mJ) 100 μs * (A) 10 ID max (continuous) ID 1 ms * DRAIN CURRENT 1 DC operation Tc = 25°C 0.1 0.001 1 300 200 100 0 25 *: SINGLE NONREPETITIVE 0.01 400 50 PULSE Tc = 25°C 100 125 150 CHANNEL TEMPEATURE (INITIAL) Tch(°C) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 10 75 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS (V) BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 11.5 mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V VDSS DD ⎝ ⎠ 2009-04-09 TK8A65D RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-04-09