2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6.5 Pulse (Note 1) IDP 19.5 Drain power dissipation (Tc = 25°C) PD 80 W JEDEC ― Single pulse avalanche energy (Note 2) EAR 375 mJ JEITA ― Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A TOSHIBA 2-16F1B Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 41.6 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK3880 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Drain-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3.5 A 2.5 5.2 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 25 ⎯ Output capacitance Coss ⎯ 140 ⎯ ⎯ 35 ⎯ ⎯ 80 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr VOUT 0V ton RL= 114 Ω 50 Ω Turn-on time ID = 3.5 A 10 V VGS Switching time VDD ∼ − 400 V ns ⎯ 50 ⎯ toff ⎯ 220 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 35 ⎯ Gate-source charge Qgs ⎯ 22 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 13 ⎯ Fall time tf Turn-off time pF Duty ≤ 1%, tw = 10 μs VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6.5 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 19.5 A IDR = 6.5 A, VGS = 0 V ⎯ ⎯ −1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 6.5 A, VGS = 0 V, ⎯ 1200 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 11.5 ⎯ μC Reverse recovery charge Marking TOSHIBA K3880 Part No. (or abbreviation code) Lot No. Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3880 ID − VDS Common source COMMON SOURCE TcTc＝=25°C 25°C Pulse testTEST PULSE 4 8,10 5.5 3 ID − VDS 10 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 5.25 2 5 1 8,10 COMMON SOURCE Tc = 25°C PULSE TEST 6 8 5.75 6 5.5 4 5.25 5 2 VGS=4.5V VGS=4.5V 0 0 0 2 4 6 8 DRAIN−SOURCE VOLTAGE VDS (V) 0 10 ID − VGS DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test PULSE TEST 8 Ta=100℃ 4 -55 25 0 30 40 50 COMMON CommonSOURCE source Tc = 25°C Ta=25℃ PULSE TEST Pulse test 16 ID=7A 12 8 3.5 4 1.5 0 0 2 4 6 GATE−SOURCE VOLTAGE VGS 8 10 0 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) (V) ⎪Yfs⎪ − ID 100 RDS (ON) − ID PULSE TEST 10 20 10.00 Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 20 VDS − VGS 20 16 12 10 DRAIN−SOURCE VOLTAGE VDS (V) 25 -55 Ta=100℃ 1 Common source COMMON SOURCE V GS =10V VGS = 10 V Tc =Tc=25℃ 25°C PULSE PulseTEST test 1.00 0.10 0.1 0.1 1 10 DRAIN CURRENT ID (A) 0.01 100 3 0.1 1 DRAIN CURRENT ID (A) 10 2009-09-29 2SK3880 RDS (ON) − Tc Common COMMONsource SOURCE =10V V GS VGS = 10 V PULSE PulseTEST test 4 7 3 3 2 ID=1.5A 1 0 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 1 3 10 VGS=0､-1V 1 160 0 Vth (V) GATE THRESHOLD VOLTAGE 1000 Coss COMMON SOURCE Common source VGS = 0 V VGS=0V f = 1 MHz f=1MHz Tc = 25°C Tc=25℃ Crss 10 1 10 3 2 COMMON SOURCE Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test VDS = 10 V 1 -40 20 40 20 0 120 (V) DRAIN−SOURCE VOLTAGE VDS (V) PD (W) DRAIN POWER DISSIPATION 160 500 60 CASE TEMPERATURE 0 40 80 120 CASE TEMPERATURE Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 80 -1.2 4 -80 100 40 -1 0 100 PD − Tc 0 -0.8 Vth − Tc DRAIN−SOURCE VOLTAGE VDS (V) 120 -0.6 400 VDD=100V 300 12 200V 400V 200 8 COMMON Common SOURCE source IDID=6.5A = 6.5 A 100 4 Tc=25℃ Pulse test Tc = 25°C PULSE TEST 0 0 0 160 16 VDS GATE−SOURCE VOLTAGE VGS 0.1 -0.4 5 Ciss 100 -0.2 DRAIN−SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS 10000 (pF) COMMON Common SOURCE source Tc = 25°C Tc=25℃ PULSE TEST Pulse test 0.1 -80 CAPACITANCE C IDR − VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 5 20 40 60 TOTAL GATE CHARGE Qg (nC) Tc (°C) 4 2009-09-29 2SK3880 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth − tw 10 1 0.1 0.01 Duty = 0.5 0.2 0.1 0.0 0.0 PDM t 0.0 Ｔ SINGLE PULSE DUTY = t/T 0.001 0.00001 Ｒ th (ch-c) = 1.56°C/W 0.0001 0.001 0.01 0.1 PULSE WIDTH tw 1 (S) SAFE OPERATING AREA EAS – Tch 400 100 μs* ID MAX (PULSED) ID MAX (CONTINUOUS) Ｉ 10 AVALANCHE ENERGY EAS (mJ) 100 DRAIN CURRENT ID (A) 10 1 ms* 1 DC OPERATION Tc = 25°C 350 300 250 200 150 100 50 0 0.1 * SINGLE NONREPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature 25 50 75 100 125 CHANNEL TEMPERATURE (INITIAL) VDSS MAX 150 Tch (°C) 0.01 1 10 100 1000 DRAIN−SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 16.1 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK3880 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29