TOSHIBA 2SK3880

2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
•
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
800
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
6.5
Pulse
(Note 1)
IDP
19.5
Drain power dissipation (Tc = 25°C)
PD
80
W
JEDEC
―
Single pulse avalanche energy
(Note 2)
EAR
375
mJ
JEITA
―
Avalanche current
IAR
6.5
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
41.6
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3880
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 640 V, VGS = 0 V
⎯
⎯
100
μA
Gate leakage current
Drain-source breakdown voltage
Test Condition
Drain cutoff current
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3.5 A
⎯
1.35
1.7
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 20 V, ID = 3.5 A
2.5
5.2
⎯
S
Input capacitance
Ciss
⎯
1500
⎯
Reverse transfer capacitance
Crss
⎯
25
⎯
Output capacitance
Coss
⎯
140
⎯
⎯
35
⎯
⎯
80
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
VOUT
0V
ton
RL= 114 Ω
50 Ω
Turn-on time
ID = 3.5 A
10 V
VGS
Switching time
VDD ∼
− 400 V
ns
⎯
50
⎯
toff
⎯
220
⎯
Total gate charge
(gate-source plus gate-drain)
Qg
⎯
35
⎯
Gate-source charge
Qgs
⎯
22
⎯
Gate-drain (“Miller”) charge
Qgd
⎯
13
⎯
Fall time
tf
Turn-off time
pF
Duty ≤ 1%, tw = 10 μs
VDD ∼
− 400 V, VGS = 10 V, ID = 6.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
6.5
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
19.5
A
IDR = 6.5 A, VGS = 0 V
⎯
⎯
−1.7
V
(Note 1)
Forward voltage (diode)
VDSF
Reverse recovery time
trr
IDR = 6.5 A, VGS = 0 V,
⎯
1200
⎯
ns
Qrr
dIDR/dt = 100 A/μs
⎯
11.5
⎯
μC
Reverse recovery charge
Marking
TOSHIBA
K3880
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK3880
ID − VDS
Common
source
COMMON
SOURCE
TcTc==25°C
25°C
Pulse
testTEST
PULSE
4
8,10
5.5
3
ID − VDS
10
6
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
5
5.25
2
5
1
8,10
COMMON SOURCE
Tc = 25°C
PULSE TEST
6
8
5.75
6
5.5
4
5.25
5
2
VGS=4.5V
VGS=4.5V
0
0
0
2
4
6
8
DRAIN−SOURCE VOLTAGE VDS (V)
0
10
ID − VGS
DRAIN−SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Common source
COMMON SOURCE
V DS=20V
VDS = 20 V
Pulse test
PULSE TEST
8
Ta=100℃
4
-55
25
0
30
40
50
COMMON
CommonSOURCE
source
Tc = 25°C
Ta=25℃
PULSE
TEST
Pulse
test
16
ID=7A
12
8
3.5
4
1.5
0
0
2
4
6
GATE−SOURCE VOLTAGE VGS
8
10
0
4
8
12
16
GATE−SOURCE VOLTAGE VGS (V)
(V)
⎪Yfs⎪ − ID
100
RDS (ON) − ID
PULSE TEST
10
20
10.00
Common source
COMMON SOURCE
VDS=20V
VDS = 20 V
Pulse test
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
20
VDS − VGS
20
16
12
10
DRAIN−SOURCE VOLTAGE VDS (V)
25
-55
Ta=100℃
1
Common
source
COMMON SOURCE
V GS
=10V
VGS
= 10
V
Tc =Tc=25℃
25°C
PULSE
PulseTEST
test
1.00
0.10
0.1
0.1
1
10
DRAIN CURRENT ID (A)
0.01
100
3
0.1
1
DRAIN CURRENT ID (A)
10
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2SK3880
RDS (ON) − Tc
Common
COMMONsource
SOURCE
=10V
V GS
VGS
= 10
V
PULSE
PulseTEST
test
4
7
3
3
2
ID=1.5A
1
0
-40
0
40
80
120
CASE TEMPERATURE Tc (°C)
1
3
10
VGS=0、-1V
1
160
0
Vth (V)
GATE THRESHOLD VOLTAGE
1000
Coss
COMMON SOURCE
Common source
VGS = 0 V
VGS=0V
f = 1 MHz
f=1MHz
Tc = 25°C
Tc=25℃
Crss
10
1
10
3
2
COMMON SOURCE
Common source
V DS=10V
ID = 1 mA
ID=1mA
PULSE
TEST
Pulse
test
VDS = 10 V
1
-40
20
40
20
0
120
(V)
DRAIN−SOURCE VOLTAGE VDS (V)
PD (W)
DRAIN POWER DISSIPATION
160
500
60
CASE TEMPERATURE
0
40
80
120
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
80
80
-1.2
4
-80
100
40
-1
0
100
PD − Tc
0
-0.8
Vth − Tc
DRAIN−SOURCE VOLTAGE VDS (V)
120
-0.6
400
VDD=100V
300
12
200V
400V
200
8
COMMON
Common SOURCE
source
IDID=6.5A
= 6.5 A
100
4
Tc=25℃
Pulse test
Tc = 25°C
PULSE TEST
0
0
0
160
16
VDS
GATE−SOURCE VOLTAGE VGS
0.1
-0.4
5
Ciss
100
-0.2
DRAIN−SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
10000
(pF)
COMMON
Common SOURCE
source
Tc = 25°C
Tc=25℃
PULSE
TEST
Pulse
test
0.1
-80
CAPACITANCE C
IDR − VDS
10
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
5
20
40
60
TOTAL GATE CHARGE Qg (nC)
Tc (°C)
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2009-09-29
2SK3880
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth − tw
10
1
0.1
0.01
Duty = 0.5
0.2
0.1
0.0
0.0
PDM
t
0.0
T
SINGLE PULSE
DUTY = t/T
0.001
0.00001
R th (ch-c) = 1.56°C/W
0.0001
0.001
0.01
0.1
PULSE WIDTH tw
1
(S)
SAFE OPERATING AREA
EAS – Tch
400
100 μs*
ID MAX (PULSED)
ID MAX (CONTINUOUS)
I
10
AVALANCHE ENERGY EAS (mJ)
100
DRAIN CURRENT ID (A)
10
1 ms*
1
DC OPERATION
Tc = 25°C
350
300
250
200
150
100
50
0
0.1 * SINGLE NONREPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature
25
50
75
100
125
CHANNEL TEMPERATURE (INITIAL)
VDSS MAX
150
Tch (°C)
0.01
1
10
100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
15 V
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 16.1 mH
5
VDS
WAVE FORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2009-09-29
2SK3880
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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