2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS ±20 V (Note 1) ID 3 Pulse (t = 1 ms) (Note 1) IDP 6 Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 36.2 mJ Avalanche current IAR 3 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C TOSHIBA Storage temperature range Tstg −55 to 150 °C Weight: 0.36 g (typ.) Drain current 0.8 MAX. 5.7 4.1 ± 0.2 Rating 1 0.6 MAX. 2.3 2.3 Symbol DC 1.1 ± 0.2 0.9 Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.6 MAX. 2 2.3 ± 0.2 • • • • • 5.5 ± 0.2 6.5 ± 0.2 3 0.6 ± 0.15 1.1 MAX. 0.6 ± 0.15 A 2 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 1 3 JEDEC ⎯ JEITA ⎯ 2-7J2B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK4022 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.5 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 1.2 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.5 A 0.5 2.2 ⎯ S Input capacitance Ciss ⎯ 267 ⎯ Reverse transfer capacitance Crss ⎯ 32 ⎯ Output capacitance Coss ⎯ 98 ⎯ ⎯ 5 ⎯ ⎯ 20 ⎯ ⎯ 5 ⎯ ⎯ 30 ⎯ ⎯ 12 ⎯ ⎯ 6 ⎯ ⎯ 6 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 1.5 A 10 V VGS 0V ton RL = 67 Ω 4.7 Ω Switching time Fall time VOUT tf pF ns VDD ≈ 100 V Turn-off time toff Duty ≤ 1%, tw = 10 μs Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ≈ 200 V, VGS = 10 V, ID = 3 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 6 A (Note 1) Forward voltage (diode) VDSF IDR = 3 A, VGS = 0 V ⎯ ⎯ −2.0 V Reverse recovery time trr IDR = 3 A, VGS = 0 V, ⎯ 125 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 470 ⎯ nC Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. K4022 Part No. (or abbreviation code) [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4022 ID – VDS Common source Tc = 25°C Pulse test 10 8 ID – VDS 6 6 4.6 2 4.2 VGS = 4 V 1 0 0 15 Common source Tc = 25°C Pulse test 2 4 Drain-source voltage 10 5 4.5 2 VGS = 4 V 0 0 6 10 VDS (V) VDS (V) 4 3 2 25 Tc = −55°C 1 100 1 2 3 Gate-source voltage 30 VDS (V) VDS – VGS 10 Common source VDS = 10 V Pulse test 0 0 20 Drain-source voltage Drain-source voltage Drain current ID (A) 5 5.5 8 4 ID – VGS 6 6 4.4 15 Drain current ID (A) Drain current ID (A) 3 4 5 Common source Tc = 25°C Pulse test 8 6 3A 4 2 ID = 1 A 0 0 6 4 VGS (V) 8 16 12 Gate-source voltage 20 VGS (V) ⎪Yfs⎪ – ID 5 RDS (ON) − ID Common source VDS = 10 V Pulse test 10 Tc = −55°C 3 5 25 3 100 Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) 10 1 0.5 0.3 0.1 0.1 0.3 0.5 1 3 5 Common source Tc = 25°C VGS = 10 V Pulse test 1 0.5 0.3 0.1 0.01 10 Drain current ID (A) 0.03 0.1 0.3 1 3 10 Drain current ID (A) 3 2009-09-29 2SK4022 Common source VGS = 10 V Pulse test (A) 4 IDR – VDS 100 ID = 3 A Drain reverse current IDR 3 ID = 1 A 2 1 Common source Tc = 25°C Pulse test 10 VGS = 10 V 1 5 0, −1 3 −40 0 40 80 Case temperature Tc 120 0.1 0 160 (°C) −0.2 −0.4 −0.6 Drain-source voltage Capacitance – VDS Vth (V) Gate threshold voltage (pF) Capacitance C Coss Crss 10 Common source VGS = 0V f = 1 MHz 3 2 1 0 −80 Tc = 25°C 1 3 10 Drain-source voltage 30 VDS 100 0 40 80 VDS (V) Drain-source voltage 30 20 10 120 Case temperature Tc 160 Dynamic input/output characteristics 250 80 120 (°C) (V) PD – Tc Drain power dissipation PD (W) −40 Case temperature Tc 40 40 −1.4 Common source VDS = 10 V ID = 1 mA Pulse test 4 100 0.3 −1.2 VDS (V) 5 Ciss 0 0 −1.0 Vth – Tc 10 1 0.1 −0.8 160 200 150 (°C) VDD = 200 V 50 25 20 15 100 100 10 50 0 0 200 Common source ID = 3 A Tc = 25°C Pulse test 5 5 10 15 20 VGS (V) 0 −80 Gate-source voltage Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – Tc 5 0 25 Total gate charge Qg (nC) 4 2009-09-29 2SK4022 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 5 3 1 0.5 Duty = 0.5 0.2 0.3 0.1 0.05 PDM 0.05 0.1 Single pulse t 0.02 T 0.03 0.01 Duty = t/T Rth (ch-c) = 6.25°C/W 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 10 (S) Safe operating area EAS – Tch 100 100 Avalanche energy EAS (mJ) 50 30 Drain current ID (A) 10 ID max (pulsed) * 5 3 100 μs * ID max (continuous) 1 ms * DC 1 80 60 40 20 0.5 0.3 0 25 50 125 150 * Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly 15 V with increase in temperature. 0.01 1 100 Channel temperature (initial) Tch (°C) 0.1 0.05 75 VDSS max 3 5 10 30 50 Drain-source voltage 100 BVDSS IAR −15 V 300 500 1000 VDD VDS (V) Test circuit RG = 25 Ω VDD = 50 V, L = 6.7 mH 5 VDS Waveform EΕ AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2009-09-29 2SK4022 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29