2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Base current IB 0.6 A Collector power dissipation PC 500 mW 1000 mW Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range PC (Note) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC4541 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA V (BR) CEO V Collector-emitter breakdown voltage DC current gain IC = 10 mA, IB = 0 50 ― ― hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400 hFE (2) VCE = 2 V, IC = 2 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V VCE = 2 V, IC = 100 mA ― 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF ― 0.1 ― ― 0.5 ― ― 0.1 ― fT Collector output capacitance Turn-on time Cob ton 20 µs INPUT Storage time Switching time tstg IB1 IB2 IB2 Fall time tf IB1 IB1 = −IB2 = 75 mA, DUTY CYCLE ≤ 1% OUTPUT 20 Ω Transition frequency 30 V µs Marking Part No. (or abbreviation code) K Lot No. D A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC4541 IC – VCE hFE – IC 4 1000 Ta = 25°C hFE 40 30 20 15 2 10 IB = 5 mA 1 Ta = 100°C 300 50 3 DC current gain Collector current IC (A) Common emitter 60 100 25 −25 30 10 3 Common emitter VCE = 2 V 0 0 0 1 2 3 4 Collector-emitter voltage VCE 1 1 5 3 10 30 100 Collector current (V) VCE (sat) – IC 3000 IC (mA) 100 Common emitter IC/IB = 20 3 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1000 VBE (sat) – IC 10 1 0.3 Ta = 100°C 0.1 0.03 0.01 1 300 25 −25 3 10 30 100 Collector current 300 1000 Common emitter IC/IB = 20 30 10 3 Ta = −25°C 1 25 0.3 100 0.1 1 3000 IC (mA) 3 10 30 100 Collector current 3 300 1000 3000 IC (mA) 2004-07-07 2SC4541 IC – VBE Safe Operating Area 3.0 10 Common emitter VCE = 2 V 3 IC (A) 2.0 1.5 Ta = 100°C 25 Collector current Collector current IC (A) 2.5 −25 1.0 0.5 0 0 0.4 1.2 0.8 Base-emitter voltage 1.6 VBE IC max (pulse)* IC max (continuous) *100 ms 1 **: DC operation Ta = 25°C 40 × 50 × 0.8 t **: DC operation Ta = 25°C 250 mm2 × 0.8 t 0.1 **: DC operation Ta = 25°C 0.3 0.03 *: Single nonrepetitive pulse Ta = 25°C **: Mounted on a ceramic substrate Curves must be derated linearly 0.01 with increase in temperature 0.005 0.1 1 3 0.3 2.0 (V) *t = 1 ms *10 ms Collector-emitter voltage VCEO max 10 VCE 30 100 (V) PC – Ta Collector power dissipation PC (W) 1.4 (1) Mounted on a ceramic substrate 2 (250 mm × 0.8 t) 1.2 1.0 (2) No heat sink (1) 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) 4 2004-07-07 2SC4541 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07