2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12 V (Note 1) ID 10 A Pulse (Note 1) IDP 30 A Drain power dissipation (Tc = 25°C) PD 130 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC ＋0.3 0.6 －0.1 1.8 MAX. Symbol 1 2 3 2.8 Characteristics 5.45 ± 0.2 4.8 MAX. 5.45 ± 0.2 Maximum Ratings (Ta = 25°C) 20.0 ± 0.3 1.0 2.0 3.3 MAX. z Complementary to 2SJ618 4.5 Ф3.2 ± 0.2 15.9 MAX. z High breakdown voltage: VDSS = 180 V 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE ⎯ JEDEC JEITA TOSHIBA SC-65 2-16C1B Weight: 4.6 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.96 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W 2 1 3 1 2009-01-27 2SK3497 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = 180V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current IGSS VGS = ±12 V, VDS = 0 V ⎯ ⎯ 10 μA 180 ⎯ ⎯ V Drain−source breakdown voltage V (BR) DSS Drain−source saturation voltage VDS (ON) ID = 10 mA, VGS = 0 V VGS = 7 V, ID = 5 A ⎯ ⎯ 0.75 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.1 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 6.0 12.0 ⎯ S Input capacitance Ciss ⎯ 2400 ⎯ Output capacitance Coss ⎯ 220 ⎯ Reverse transfer capacitance Crss ⎯ 30 ⎯ VDS = 30 V, VGS = 0 V, f = 1 MHz pF This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA K3497 Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free 2 2009-01-27 2SK3497 ID – VDS ID – VGS 20 10 4 3 8 Drain current ID (A) Drain current ID (A) 16 12 8 VGS = 2.5 V 6 4 Tc = 100°C 25 2 4 0 Common source VDS = 10 V Pulse test 3.5 Common source Tc = 25°C Pulse test 0 2 4 6 Drain-source voltage 8 −55 0 10 0 1 VDS (V) Gate-source voltage ⎪Yfs⎪ – ID Drain−source saturation voltage VDS (ON) (V) Common source VDS = 10 V Pulse test (S) Forward transfer admittance ⎪Yfs⎪ 3 Tc = 100°C −55 25 1 0.1 0.1 1 2 ID = 10 A 1 5 2.5 0 −80 10 −40 0 80 120 160 (°C) PD – Tc Capacitance – VDS Drain power dissipation PD (W) 150 Ciss (pF) 40 Case temperature Tc 10000 Capacitance C VGS (V) Common source VGS = 10 V Pulse test Drain current ID (A) 1000 Coss 100 Common source VGS = 0 V f=1 MHZ Tc = 25°C 10 0.1 4 VDS (ON) – Tc 100 10 3 2 Crss 1 Drain-source voltage 10 120 90 60 30 0 100 VDS (V) 0 40 80 Case temperature Tc 3 120 160 (°C) 2009-01-27 2SK3497 Safe operating area 100 Drain current ID (A) ID MAX. (pulsed) * ID MAX. (continuous) 10 t = 1 ms* DC OPERATION Tc=25℃ 1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 Drain-source voltage VDSS MAX. 100 1000 VDS (V) 4 2009-01-27 2SK3497 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-01-27