TOSHIBA HN2A26FS

HN2A26FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A26FS
Frequency General-Purpose Amplifier Applications
Unit: mm
1.0±0.05
•
Excellent hFE linearity
•
Lead (Pb) - free
2
5
3
4
0.48
Maximum Ratings (Ta = 25°C)
Characteristic
6
+0.02
-0.04
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
1
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Base current
IB
−30
mW
PC(Note)
50
mW
Tj
150
°C
TOSHIBA
Tstg
−55 ~ 150
°C
Weight: 0.001 g (typ.)
Collector power dissipation
Junction temperature
Storage temperature range
1. EMITTER1
2. EMITTER2
3. BASE2
4. COLLECTOR2
5. BASE1
6. COLLECTOR1
fS6
0.15±0.05
High current: IC = −100 mA (max)
High hFE: hFE = 120 to 400
0.1±0.05
0.1±0.05
•
0.35 0.35
High voltage: VCEO = −50 V
•
0.8±0.05
0.1±0.05
1.0±0.05
•
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
0.7±0.05
•
JEDEC
―
JEITA
―
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
2-1F1C
Note: Total rating.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Collector cutoff current
Emitter cutoff current
Test Condition
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
⎯
−0.1
µA
µA
−0.1
400
IC = −100 mA, IB = −10 mA
―
−0.18
−0.3
V
VCE = −10 V, IC = −1 mA
80
⎯
⎯
MHz
VCB = −10 V, IE = 0, f = 1 MHz
⎯
1.6
⎯
pF
VCE (sat)
Cob
⎯
⎯
Collector-emitter saturation voltage
Collector output capacitance
Unit
⎯
VCE = −6 V, IC = −2 mA
Note: hFE Classification
( ) Marking symbol
Max
⎯
hFE(Note)
fT
Typ.
120
DC current gain
Transition frequency
Min
Y (F): 120 ~ 140, GR (H): 200 ~ 400
Marking
Equivalent Circuit (top view)
Type Name
hFE Rank
6
5
4
Q2
Q1
PF
1
2
1
3
2005-04-11
HN2A26FS
Q1, Q2 Common
hFE - IC
IC - VCE
1000
-120
COLLECTOR CURRENT IC (mA)
-100
-1.5
DC CURRENT GAIN hFE
COMMON EMITTER Ta = 25°C
-2.0
-1.0
-80
-0.7
-60
-0.5
-40
-0.3
-0.2
Ta = 100°C
100
-25
COMMON EMITTER
VCE = −6V
VCE = −1V
-20
IB = -0.1mA
-00
-00
-1
-2
-3
-4
-5
-6
10
-0.1
-7
-1
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
-100
VBE(sat) - IC
-10
COMMON EMITTER
IC/IB = 10
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-10
COLLECTOR CURRENT IC (mA)
-1
-0.1
Ta = 100°C
25
COMMON EMITTER
IC/IB = 10
-25
-1
25
Ta = 100°C
-25
-0.01
-0.1
-1
-10
-0.1
-0.1
-100
-1
COLLECTOR CURRENT IC (mA)
IB - VBE
COLLECTOR POWER DISSIPATION PC (mV)
-10
-25
25
-1
COMMON EMITTER
VCE = −6V
-0.1
-00
-0.2
-0.4
-0.6
-0.8
-100
PC - Ta
-100
Ta = 100°C
-10
COLLECTOR CURRENT IC (mA)
-1000
BASE CURRENT IB (uA)
25
-1
-1.2
-1.4
100
Mounted on FR4 board
(10 mm × 10 mm × 1 mmt)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
BASE-EMITTER VOLTAGE VBE (V)
*:Total rating.
2
2005-04-11
HN2A26FS
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
3
2005-04-11