2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) 0.2±0.05 0.15±0.05 Unit: mm 1 3 2 +0.02 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −30 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 °C TOSHIBA Tstg −55~150 °C Weight: 0.0006 g (typ.) Storage temperature range 0.1±0.05 0.48 -0.04 • Lead (Pb) free 0.8±0.05 1.0±0.05 0.1±0.05 fSM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― 2-1E1A Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 µA DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob VCE = −6 V, IC = −2 mA 120 ⎯ 400 ⎯ IC = −100 mA, IB = −10 mA ⎯ −0.18 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 1.6 ⎯ pF Note: hFE classification Y (F): 120~240, GR (H): 200~400 ( ) marking symbol Marking Type Name hFE Rank 8F 1 2005-03-23 2SA2154 hFE - IC IC - VCE 1000 -120 COLLECTOR CURRENT IC (mA) -100 -1.5 DC CURRENT GAIN hFE COMMON EMITTER Ta = 25°C -2.0 -1.0 -80 -0.7 -60 -0.5 -40 -0.3 -0.2 Ta = 100°C 100 -25 COMMON EMITTER VCE = −6V VCE = −1V -20 IB = -0.1mA -00 -00 -1 -2 -3 -4 -5 -6 10 -0.1 -7 -1 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - IC VBE(sat) - IC COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -100 -10 -0.1 Ta = 100°C 25 -25 -0.01 -0.1 -1 -10 COMMON EMITTER IC/IB = 10 -25 -1 25 -0.1 -0.1 -100 -1 COLLECTOR CURRENT IC (mA) IB - VBE COLLECTOR POWER DISSIPATION PC (mV) -10 -25 25 -1 COMMON EMITTER VCE = −6V -0.1 -0.2 -0.4 -0.6 -0.8 -10 -100 PC - Ta -100 Ta = 100°C Ta = 100°C COLLECTOR CURRENT IC (mA) -1000 BASE CURRENT IB (uA) -10 COLLECTOR CURRENT IC (mA) -1 -00 25 -1 -1.2 -1.4 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (°C) BASE-EMITTER VOLTAGE VBE (V) 2 2005-03-23 2SA2154 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2005-03-23