GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 15 1 ms ICP 30 DC IF 15 A JEDEC ― 1 ms IFM 30 W JEITA ― Collector power dissipation (Tc = 25°C) PC 70 W TOSHIBA Junction temperature Tj 150 °C Weight: 1.5 g Tstg −55~150 °C Collector current Emitter-collector forward current Storage temperature range A 2-10S1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector 15J331 Gate Emitter Part No. (or abbreviation code) Lot No. JEDEC ― JEITA ― A line indicates lead (Pb)-free package or lead (Pb)-free finish. TOSHIBA 1 2-10S2C Weight: 1.4 g 2006-10-31 GT15J331 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 1.5 mA, VCE = 5 V 4.5 ⎯ 7.5 V VCE (sat) IC = 15 A, VGE = 15 V ⎯ 1.75 2.3 V VCE = 20 V, VGE = 0, f = 1 MHz ⎯ 2400 ⎯ pF ⎯ 0.04 ⎯ Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time tr Turn-on time Fall time Turn-off time Inductive Load ton VCC = 300 V, IC = 15 A ⎯ 0.22 ⎯ tf VGG = 15 V, RG = 43 Ω ⎯ 0.10 0.23 ⎯ 0.37 ⎯ (Note1) toff μs Peak forward voltage VF IF = 15 A, VGE = 0 ⎯ ⎯ 2.0 V Reverse recovery time trr IF = 15 A, di/dt = −100 A/μs ⎯ ⎯ 200 ns Thermal resistance (IGBT) Rth (j-c) ⎯ ⎯ ⎯ 1.79 °C/W Thermal resistance (Diode) Rth (j-c) ⎯ ⎯ ⎯ 3.45 °C/W Note1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% td (off) 10% td (on) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2006-10-31 GT15J331 IC – VCE VCE – VGE 50 20 Common emitter VCE (V) Common emitter Tc = 25°C 10 15 20 30 20 9 10 0 Collector-emitter voltage Collector current IC (A) 40 VGE = 8 V 0 1 2 3 Collector-emitter voltage 4 Tc = −40°C 16 30 12 15 8 4 IC = 6 A 0 0 5 4 VCE (V) 8 Gate-emitter voltage VCE (V) 16 Collector-emitter voltage VCE (V) Collector-emitter voltage VGE (V) Common emitter Tc = 25°C 30 12 15 8 IC = 6 A 4 8 12 Gate-emitter voltage 16 Tc = 125°C 16 30 12 15 8 4 IC = 6 A 0 0 20 4 8 12 Gate-emitter voltage VGE (V) IC – VGE 16 20 VGE (V) VCE (sat) – Tc 4 30 Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) Collector current IC 20 20 Common emitter 0 0 16 VCE – VGE VCE – VGE 20 4 12 20 10 −40 Tc = 125°C VGE = 15 V 3 30 A 2 15 A IC = 6 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-10-31 GT15J331 Switching time 0.5 Switching time 3 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C 0.3 (μs) 1 ton, tr – RG Switching time ton, tr Switching time ton, tr (μs) 3 ton 0.1 0.05 tr 0.03 ton, tr – IC Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.01 1 3 10 30 100 Gate resistance 1000 toff, tf – RG 1 1 0.5 toff tf 0.1 0.03 0.01 1 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C 3 10 30 100 Gate resistance RG 300 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.05 0.03 0 Eon, Eoff (mJ) Eon Eoff 3 10 30 Gate resistance 100 RG 3 6 Switching loss 0.1 0.03 1 0.1 10 0.3 300 9 (Ω) Eon, Eoff – IC Eon 0.1 Eoff 0 3 6 9 Collector current IC 4 15 12 (A) Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2 1 0.01 1000 (A) tf (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C Note2 15 12 toff, tf – IC Collector current IC Switching loss Eon, Eoff (mJ) Switching loss 1 0.3 0.01 1000 10 3 9 toff 0.5 Eon, Eoff – RG Switching loss 6 Switching time 3 0.05 3 Collector current IC 3 0.3 0 (Ω) Switching time toff, tf (μs) Switching time toff, tf (μs) Switching time RG 300 0.01 12 15 (A) 2006-10-31 GT15J331 C – VCE VCE, VGE – QG 500 Cies 100 Coes 3 10 30 100 300 Collector-emitter voltage 1000 200 4 10 30 20 Forward current IF (A) Reverse recovery current Irr (A) Common collector VGE = 0 20 15 Tc = 125°C 25 10 −40 5 0.8 1.2 1.6 Forward voltage VF 10 100 trr Irr 1 2.0 30 VGE (V) 1000 Common collector di/dt = −100 A/μS VGE = 0 : Tc = 25°C : Tc = 125°C 0 3 (V) 6 9 10 15 12 Forward current IF Safe operating area 50 0 70 60 50 trr, Irr − IF 100 0.4 40 Gate charge QG (nC) IF − VF 0 0 8 100 VCE (V) 30 25 200 VCE = 100 V 0 0 3000 12 300 trr (ns) 3 1 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 300 16 Reverse recovery time 10 VCE (V) 300 RL = 20 Ω 400 Tc = 25°C Collector-emitter voltage Capacitance C (pF) 1000 30 20 Common emitter Gate-emitter voltage 3000 (A) Reverse bias SOA 50 IC max (pulse)* 30 50 μs* (A) 10 IC max (continuous) 5 3 Collector current IC Collector current IC (A) 10 ms* 100 μs* DC operation 1 ms* 1 *: Single 0.5 nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 10 5 3 1 0.5 0.3 Tj < = 125°C VGE = 15 V RG = 43 Ω 30 Collector-emitter voltage 100 300 0.1 1 1000 3 10 30 100 Collector-emitter voltage VCE (V) 5 VCE 300 1000 (V) 2006-10-31 GT15J331 Transient thermal impedance Rth (t) (°C/W) 10 10 Rth (t) – tw 2 Tc = 25°C 1 FRD 10 0 IGBT 10 10 10 10 −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 6 2006-10-31 GT15J331 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-31