FAIRCHILD KSP75

KSP75/76/77
KSP75/76/77
Darlington Transistor
• Collector-Emitter Voltage: VCES= KSP75: 40V
KSP76: 50V
KSP77: 60V
• Collector Power Dissipation: PC (max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
Parameter
Value
Units
-40
-50
-60
V
V
V
Collector-Base Voltage
: KSP75
: KSP76
: KSP77
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55~150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
BVCBO
ICBO
Parameter
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Test Condition
IC= -100µA, IB=0
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
IC= -100µA, IE=0
Max.
IEBO
Emitter Cut-off Current
ICES
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
V
V
V
-40
-50
-60
V
V
V
VCE= -30V, IE=0
VCE= -40V, IE=0
VCE= -50V, IE=0
-100
-100
-100
nA
nA
nA
nA
VCE= -10V, IB=0
-100
nA
VCE= -30V, IE=0
VCE= -40V, IE=0
VCE= -50V, IE=0
-500
-500
-500
nA
nA
nA
-1.5
V
2
V
DC Current Gain
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -100mA, IB= -0.1mA
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -100mA
©2001 Fairchild Semiconductor Corporation
Units
-40
-50
-60
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
hFE
Min.
10K
10K
Rev. A1, July 2001
KSP75/76/77
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000k
hFE, DC CURRENT GAIN
VCE = -5V
100k
10k
1k
-1
-10
-100
-1000
-10
IC = 1000 IB
VBE(sat)
-1
V CE(sat)
-0.1
-1
IC[mA], COLLECTOR CURRENT
-10
-400
-100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10k
200
IC[A], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
VCE = -5V
100
10
100µ S
-1k
1mS
1S
O
TC = 25 C
-100
O
T a = 25 C
1
-0.0
-10
-0.4
-0.8
-1.2
-1.6
-2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
-2.4
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A1, July 2001
KSP75/76/77
Package Demensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3