TOSHIBA RN2107MFV

RN2107MFV∼RN2109MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107MFV,RN2108MFV,RN2109MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
0.22±0.05
Unit: mm
0.32±0.05
0.8±0.05
0.4
A wide range of resistor values is available for use in various circuits.
1.2±0.05
1
0.4
1.2±0.05
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
0.8±0.05
Ultra-small package, suited to very high density mounting
2
3
Complementary to the RN1107MFV~RN1109MFV
0.5±0.05
0.13±0.05
Lead (Pb) - free
Equivalent Circuit and Bias Resistor Values
VESM
Type No.
R1 (kΩ)
R2 (kΩ)
RN2107MFV
10
47
RN2108MFV
22
47
JEDEC
RN2109MFV
47
22
JEITA
1. BASE
2. EMITTER
3. COLLECTOR
TOSHIBA
―
―
2-1L1A
Weight: 0.0015 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
RN2107MFV
~RN2109MFV
Collector-emitter voltage
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−6
RN2107MFV
Emitter-base voltage
RN2108MFV
−7
VEBO
−15
RN2109MFV
Collector current
Collector power dissipation
RN2107MFV
~RN2109MFV
Junction temperature
Storage temperature range
V
IC
−100
mA
PC(Note)
150
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
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2005-03-30
RN2107MFV∼RN2109MFV
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff
current
RN2107MFV~
2109MFV
Symbol
ICBO
ICEO
Test
Circuit
―
RN2107MFV
Emitter cutoff current
RN2108MFV
IEBO
―
RN2109MFV
Test Condition
Min
Typ.
Max
Unit
VCB = −50 V, IE = 0
―
―
−100
nA
VCE = −50 V, IB = 0
―
―
−500
nA
VEB = −6 V, IC = 0
−0.081
―
−0.15
VEB = −7 V, IC = 0
−0.078
―
−0.145
VEB = −15 V, IC = 0
−0.167
―
−0.311
80
―
―
80
―
―
70
―
―
―
−0.1
−0.3
−0.7
―
−1.8
−1.0
―
−2.6
−2.2
―
−5.8
−0.5
―
−1.0
−0.6
―
−1.16
−1.5
―
−2.6
―
0.9
―
7
10
13
15.4
22
28.6
32.9
47
61.1
RN2107MFV
DC current gain
RN2108MFV
hFE
―
VCE = −5 V,
IC = −10 mA
RN2109MFV
Collector-emitter
saturation voltage
RN2107MFV~
2109MFV
VCE (sat)
―
IC = −5 mA,
IB = −0.25 mA
―
VCE = −0.2 V,
IC = −5 mA
RN2107MFV
Input voltage (ON)
RN2108MFV
VI (ON)
RN2109MFV
RN2107MFV
Input voltage (OFF)
RN2108MFV
Collector output
capacitance
RN2107MFV~
2109MFV
VI (OFF)
―
VCE = −5 V,
IC = −0.1 mA
―
VCB = −10 V, IE = 0,
f = 1 MHz
RN2109MFV
Cob
RN2107MFV
Input resistor
RN2108MFV
R1
―
―
RN2109MFV
RN2107MFV
Resistor ratio
RN2108MFV
R1/R2
―
RN2109MFV
2
―
0.17
0.213
0.255
0.374
0.468
0.562
1.71
2.14
2.56
mA
―
V
V
V
pF
kΩ
―
2005-03-30
RN2107MFV∼RN2109MFV
RN2107MFV
RN2107MFV
IC - VI (ON)
Ta = 100°C
-10
25
-1
-25
EMITTER COMMON
VCE = -0.2V
-0.1
-0.1
-1
-10
-1000
Ta = 100°C
25
EMITTER COMMON
VCE = -5V
-10
-0.2
-100
RN2108MFV
COLLECTOR CURRENT IC (µA)
COLLECTOR CURRENT IC (mA)
-10
Ta = 100°C
25
-25
EMITTER COMMON
VCE = -0.2V
-1
-10
-1
-1.2
-1.4
-1000
25
Ta = 100°C
-25
-100
-10
-0.2
-100
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE　VI (OFF) ( V)
RN2109MFV
IC - VI (ON)
IC - VI (OFF)
-10000
-100
COLLECTOR CURRENT IC (µA)
EMITTER COMMON
VCE = -0.2V
-10
Ta = 100°C
-1
-0.1
-0.1
-0.8
EMITTER COMMON
VCE = -5V
INPUT VOLTAGE　VI (ON) ( V)
RN219MFV
-0.6
RN2108MFV IC - VI (OFF)
IC - VI (ON)
-10000
-0.1
-0.1
-0.4
INPUT VOLTAGE　VI (OFF) ( V)
-100
-1
-25
-100
INPUT VOLTAGE　VI (ON) ( V)
COLLECTOR CURRENT IC (mA)
IC - VI (OFF)
-10000
COLLECTOR CURRENT IC (µA)
COLLECTOR CURRENT IC (mA)
-100
25
-25
-1
-10
EMITTER COMMON
VCE = -5V
-1000
25
-25
-100
-10
-0.6
-100
Ta = 100°C
-1
-1.4
-1.8
-2.2
-2.6
-3
INPUT VOLTAGE　VI (OFF) ( V)
INPUT VOLTAGE　VI (ON) ( V)
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RN2107MFV∼RN2109MFV
RN2107MFV
hFE - IC
RN2107MFV
COMMON EMITTER
VCE = -5 V
Ta = 100°C
100
-25
25
10
COMMON EMITTER
IC / IB = 10
-0.1
25
-25
-10
COLLECTOR CURRENT　IC (mA)
RN2108MFV
-100
-1
-10
-100
COLLECTOR CURRENT IC (mA)
hFE - IC
RN2108MFV
1000
VCE(sat) - IC
-1
COMMON EMITTER
VCE = -5 V
Ta = 100°C
100
-25
COMMON EMITTER
IC / IB = 10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
DC CURRENT GAIN hFE
Ta = 100°C
-0.01
-1
25
10
-0.1
Ta = 100°C
25
-25
-0.01
-1
-10
-100
-1
COLLECTOR CURRENT　IC (mA)
RN2109MFV
hFE- IC
RN2109MFV
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
VCE = -5 V
Ta = 100°C
100
-10
-100
COLLECTOR CURRENT IC (mA)
1000
DC CURRENT GAIN hFE
VCE(sat) - IC
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
DC CURRENT GAIN hFE
1000
25
-25
VCE(sat) - IC
COMMON EMITTER
IC / IB = 10
-0.1
Ta = 100°C
-25
25
-0.01
10
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT　IC (mA)
4
2005-03-30
RN2107MFV∼RN2109MFV
Type Name
Marking
RN2107MFV
RN2108MFV
RN2109MFV
5
2005-03-30
RN2107MFV∼RN2109MFV
RESTRICTIONS ON PRODUCT USE
•
030619EAA
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2005-03-30