TLP330 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP330 Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA TLP330 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP package.This is suitable for application of AC input current up to 150mA. • If maximum rating: ±150mA • Collector−Emitter voltage: 55V(min.) • Current transfer ratio: 25% (min.)(IF = ±20mA) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.39 g Pin Configurations (top view) 1 6 2 5 3 4 11−7A8 1: Anode, cathode 2: Cathode, anode 3: NC 4: Emitter 5: Collector 6: Base 1 2007-10-01 TLP330 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF ±150 mA ΔIF /°C −1.5 mA /°C Peak forward current (100μs pulse,100pps) IFP ±1 A Junction temperature Tj 125 °C Collector−emitter voltage VCEO 55 V Collector−base voltage VCBO 80 V Emitter−collector voltage VECO 7 V Emitter−base voltage Detector LED Forward current Forward current derating (Ta ≥ 25°C) VEBO 7 V Collector current IC 80 mA Power dissipation PC 150 mW ΔPC /°C −1.5 mW /°C Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT /°C −2.5 mW /°C BVS 5000 Vrms Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1 min, R.H. ≤ 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF(RMS) ― 20 120 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP330 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Condition Min. Typ. Max. Unit Forward voltage VF IF = ±100 mA — 1.4 1.7 V Forward current IF VF= ±0.7V — 2.5 20 μA Capacitance CT V = 0, f = 1 MHz — 100 — pF Collector−emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter−collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V Collector−base breakdown voltage V(BR) CBO IC = 0.1 mA 80 — — V Emitter−base breakdown voltage V(BR) EBO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA VCE = 24 V, Ta = 85°C — 2 50 μA Collector dark current ICEO Collector dark current ICER VCE = 24 V, Ta = 85°C RBE = 1MΩ — 0.5 10 μA Collector dark current ICBO VCE = 10V — 0.1 — nA DC forward current gain hFE VCE = 5 V, IC = 0.5mA — 400 — — Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF MIn. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Base photo−current Collector−emitter saturation voltage Off−state collector current CTR symmetry Symbol Condition IC / IF IF = ±20 mA VCE = 1 V 25 — — % IC / IF(high) IF = ±100 mA VCE = 1 V 20 — 80 % IF = ±5 mA, VCB = 5 V — 10 — μA IC = 2.4 mA, IF = 20 mA — — 0.4 IC = 2.4 mA, IF = ±100 mA — — 0.4 VF = ± 0.7V, VCE = 24 V — 1 10 μA IC (IF = −20mA) / IC (IF = +20mA) 0.5 1 2 — IPB VCE (sat) IC(off) IC (ratio) 3 V 2007-10-01 TLP330 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60% BVS Typ. Max. Unit — 0.8 — pF — Ω 5×10 AC, 1 minute Isolation voltage Min. 10 10 14 5000 — — Vrms AC, 1 second, in oil — 10000 — Vrms DC, 1 minute, in oil — 10000 — Vdc Min. Typ. Max. Unit — 2 — — 3 — — 3 — — 3 — — 2 — — 15 — — 25 — — 2 — — 12 — — 20 — Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time tOFF Turn−on time tON Storage time ts Turn−off time tOFF Test Condition VCC = 10 V IC = 2 mA RL = 100Ω RL = 1.9 kΩ (Fig.1) RBE = OPEN VCC = 5 V, IF = ±16 mA RL = 1.9 kΩ (Fig.1) RBE = 220kΩ VCC = 5 V, IF = ±16 mA μs μs μs Fig. 1 Switching time test circuit IF RL RBE VCC IF VCE VCE tS tON 4 4.5V VCC 0.5V tOFF 2007-10-01 TLP330 PC – Ta 200 160 160 Allowable collector power Dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 200 120 80 40 0 -20 0 20 40 60 80 100 120 80 40 0 -20 120 0 20 Ambient temperature Ta (°C) 40 Ta = 25°C 50 Ta = 25°C (mA) 1000 500 Forward current IF Pulse forward current IFP (mA) 120 30 300 100 50 30 10 3 10 5 3 1 0.5 0.3 10-3 10-2 3 10-1 3 Duty cycle ratio 0.1 0.6 100 3 0.8 DR 1.0 1.2 1.4 1.6 Forward voltage VF ΔVF/ΔTa – IF 1.8 (V) IFP – VFP 1000 Pulse forward current IFP (mA) -3.2 Forward voltage temperature Coefficient ΔVF/ΔTa (mV / °C) 100 IF – V F 100 Pulse width ≦ 100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 500 300 100 50 30 10 Pulse width ≦ 10μs 5 repetitive frequency 3 = 100Hz Ta = 25°C -0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 30 0 0.6 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 5 2.2 2.6 VFP (V) 2007-10-01 TLP330 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01