UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS(on) = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 50nC ) • Low Crss ( Typ. 27pF ) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 500 Units V ±30 V 22 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 22 A EAR Repetitive Avalanche Energy (Note 1) 39 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns -Continuous (TC = 100oC) - Pulsed 88 A (Note 2) 1110 mJ (Note 3) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) (TC = 25oC) PD A 13 - Derate above 25oC 388 W 3.1 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case to Sink RθJA Thermal Resistance, Junction to Ambient ©2007 Fairchild Semiconductor Corporation FDA20N50F Rev. A 1 Min. Max. - 0.44 0.24 - - 40 Units o C/W www.fairchildsemi.com FDA20N50F N-Channel MOSFET October 2007 Device Marking FDA20N50F Device FDA20N50F Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V ID = 250µA, Referenced to 25 C - 0.6 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC o - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.22 0.26 Ω - 24 - S µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 11A gFS Forward Transconductance VDS = 40V, ID = 11A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 20A VGS = 10V (Note 4, 5) - 2550 3390 pF - 350 465 pF - 27 40 pF - 50 65 nC - 14 - nC - 20 - nC - 45 100 ns - 120 250 ns - 100 210 ns - 60 130 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 20A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 88 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 22A - - 1.5 V trr Reverse Recovery Time - 154 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 20A dIF/dt = 100A/µs - 0.5 - µC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDA20N50F Rev. A 2 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 80 o 10 150 C o 25 C *Notes: 1. 250µs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 0.8 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.7 0.6 0.5 0.4 VGS = 10V 0.3 VGS = 20V 0.2 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.1 *Note: TJ = 25 C 0 25 50 ID, Drain Current [A] 0.2 0.0 75 Figure 5. Capacitance Characteristics Coss 3000 Ciss 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4500 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] Capacitances [pF] 6000 2. 250µs Pulse Test *Note: 1. VGS = 0V 2. f = 1MHz 1500 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDA20N50F Rev. A 1 10 VDS, Drain-Source Voltage [V] 0 50 3 *Note: ID = 20A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 200 1.2 30µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 100 1.1 1.0 100µs 10 1ms DC 1 *Notes: 0.9 o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 10ms Operation in This Area is Limited by R DS(on) o 0.1 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 25 ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 0.02 t2 *Notes: 0.01 o 1. ZθJC(t) = 0.44 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 1E-3 -5 10 FDA20N50F Rev. A PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDA20N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA20N50F Rev. A 5 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDA20N50F Rev. A 6 www.fairchildsemi.com FDA20N50F N-Channel MOSFET Mechanical Dimensions TO-3PN FDA20N50F Rev. A 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only Rev. I31 FDA20N50F Rev. A 8 www.fairchildsemi.com FDA20N50F N-Channel MOSFET TRADEMARKS