RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zApplications Low current rectification zExternal dimensions (Unit : mm) TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 2 - 2.7±0.3 29±1 29±1 φ1.8±0.2 ROHM : MSD JEDEC : DO-34 zConstruction Silicon epitaxial planar zTaping specification s (Unit : mm) IVORY H2 BLUE A H2 Mark 記号 E I 寸法規格値 (mm) Standard dimension value (mm) T-72 52.4±1.5 T-77 26.0+0.4 '-0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ G1 0.1ＭＩＮ G2 0ＭＩＮ H1 6.0±0.5 H2 5.0±0.5 I 0.5ＭＡＸ L1-L2 0.6ＭＡＸ t 3.2MIN Ａ B C L2 L1 H1 G1 F G2 H1 D ＊H2(6mm)：BROWN t cf : cumulativ e pitch tolerance with 20 pitch than ±1.5mm 注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする zAbsolute maximum ratings (Ta = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 40 40 30 200 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA ℃ ℃ zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Min. - Typ. - Max. 0.37 0.5 Unit V µA Ct - 2.0 - pF Conditions IF=1mA VR=25V VR=1V , f=1MHz Rev.A 1/3 RB721Q-40 Diodes zElectrical characteristic curves 100000 10 Ta=75℃ Ta=-25℃ 1 Ta=25℃ 0.1 10000 Ta=25℃ 100 10 Ta=-25℃ 1 0.1 0 10 20 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS AVE:310.7mV 300 290 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 10 Ta=25℃ VR=25V n=30pcs 250 200 150 100 Ta=25℃ f=1MHz VR=1V n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 310 REVERSE CURRENT:IR(nA) 320 1 40 300 Ta=25℃ IF=1mA n=30pcs f=1MHz 0.1 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 330 AVE:54.0nA 50 8 7 6 5 4 AVE:2.07pF 3 2 1 0 0 280 VF DISPERSION MAP IR DISPERSION MAP 20 Ct DISPERSION MAP 10 1cyc Ifsm 15 8.3ms 10 5 AVE:5.60A PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) Ta=75℃ 1000 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 6 4 2 0 0 0 8 1 10 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP Mounted on epoxy board IF=10mA 0.005 0.05 Rth(j-a) time D=1/2 0.04 300us Rth(j-l) 100 Rth(j-c) 0.03 Sin(θ＝180) 0.02 DC 0.004 REVERSE POWER DISSIPATION:PR (W) 1ms FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 IM=1mA 0.01 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.003 Sin(θ＝180) D=1/2 0.002 DC 0.001 0 0 0 0.01 0.02 0.03 0.04 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.05 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.A 2/3 RB721Q-40 Diodes 0A 0V 0.08 0.06 DC 0.04 D=1/2 0.1 Io t T VR D=t/T VR=20V Tj=125℃ 0.02 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0A 0V 0.08 0.06 DC 0.04 D=1/2 Io t T VR D=t/T VR=20V Tj=125℃ 0.02 Sin(θ＝180) Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1