2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDSS 450 V Drain–gate voltage (RGS = 20 kΩ) VDGR 450 V Gate–source voltage VGSS ±30 V DC (Note 1) ID 13 Pulse (Note 1) IDP 52 Drain power dissipation (Tc = 25°C) PD 100 W Single-pulse avalanche energy (Note 2) EAS 350 mJ Avalanche current IAR 13 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 0.74 g (typ.) Storage temperature range Tstg −55 to 150 °C Drain current A JEDEC ― JEITA SC-67 2-10R1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case 4 Symbol Max Unit Rth (ch-c) 1.25 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω, IAR = 13 A 3 Note 3: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-10-01 2SK3544 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cutoff current Drain–source breakdown voltage Min IGSS Gate leakage current Gate–source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Gate threshold voltage Drain–source ON-resistance RDS (ON) VGS = 10 V, ID = 6 A ⎯ 0.29 0.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6 A 3.0 5.8 ⎯ S Input capacitance Ciss ⎯ 1600 ⎯ Reverse transfer capacitance Crss ⎯ 17 ⎯ Output capacitance Coss ⎯ 220 ⎯ ⎯ 28 ⎯ ⎯ 45 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr ton Switching time Fall time tf Turn-off time Duty < = 1%, tw = 10 μs toff Total gate charge Qg Gate–source charge Qgs Gate–drain charge Qgd Output RL = 33.3 Ω 10 Ω Turn-on time ID = 6 A 10 V VGS 0V pF ns ⎯ 10 ⎯ ⎯ 56 ⎯ ⎯ 34 ⎯ ⎯ 19 ⎯ ⎯ 15 ⎯ VDD ∼ − 200 V VDD ∼ − 360 V, VGS = 10 V, ID = 13 A nC Source–Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 13 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 52 A (Note 1) Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 13 A, VGS = 0 V, ⎯ 300 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 3.4 ⎯ μC Marking Part No. (or abbreviation code) K3544 Lot No. A line indicates a Lead (Pb)-Free Finish 2 2007-10-01 2SK3544 ID – VDS Common source Tc = 25°C Pulse test ID – VDS 20 7.5 10 Drain current ID (A) 8 15 7.0 6 4 6.5 VGS = 6.0 V 2 15 10 8.5 Common source Tc = 25°C Pulse test 8.25 16 7.25 Drain current ID (A) 10 8 12 7.5 8 7 6.5 4 VGS = 6 V 0 0 2 4 6 Drain–source voltage 8 0 0 10 VDS (V) 10 20 Drain–source voltage ID – VGS VDS (V) 25 10 Tc = −55°C 100 6 9 Gate–source voltage Common source Tc = 25°C Pulse test 6 ID = 13 A 4 6 2 3 VGS (V) 4 8 (Ω) (S) Forward transfer admittance ⎪Yfs⎪ 10 Drain–source ON-resistance RDS (ON) Tc = −55°C 25 100 1 1 16 20 VGS (V) RDS (ON) – ID VDS = 20 V 0.1 0.1 12 Gate–source voltage ⎪Yfs⎪ – ID Pulse test VDS (V) 8 0 0 12 50 Common source 50 VDS – VGS 20 0 3 40 10 Common source VDS = 20 V Pulse test Drain–source voltage Drain current ID (A) 30 30 10 100 Drain current ID (A) 10 Common source Tc = 25°C Pulse test 1 VGS = 10 V 15 0.1 0.1 1 10 100 Drain current ID (A) 3 2007-10-01 2SK3544 RDS (ON) – Tc IDR – VDS 1.0 100 Common source Pulse test 6 ID = 13 A 0.6 Tc = 25°C 3 0.4 0.2 Pulse test 10 1 10 3 1 5 −40 0 40 80 Case temperature Tc 120 0.1 0 160 (°C) −0.2 −0.4 Vth (V) Ciss Gate threshold voltage Capacitance C (pF) 1000 Coss Common 10 source VGS = 0 V f = 1 MHz Crss 1 10 100 Drain–source voltage Common source VDS = 10 V ID = 1 mA Pulse test 5 4 3 2 1 0 −80 Tc = 25°C 1 0.1 −40 0 40 80 Case temperature Tc 1000 PD – Tc 160 (°C) Dynamic input/output characteristics 500 VDS (V) 160 Drain–source voltage 120 80 40 80 120 VDS (V) 200 40 −1.2 VDS (V) 6 100 −1 Vth – Tc Capacitance – VDS Drain power dissipation PD (W) −0.8 Drain–source voltage 10000 0 0 −0.6 120 Case temperature Tc 160 400 300 (°C) VDD = 90 V VDS 16 12 VGS 200 20 180 360 8 4 100 0 0 200 Common source ID = 13 A Tc = 25°C Pulse test 10 20 30 40 VGS (V) 0 −80 VGS = 0, −1 V Gate–source voltage 0.8 (A) VGS = 10 V Drain reverse current IDR Drain–source ON-resistance RDS (ON) (Ω) Common source 0 50 Total gate charge Qg (nC) 4 2007-10-01 2SK3544 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.25°C/W Single Pulse 単発 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 10 (s) EAS – Tch Safe operating area 400 100 ID max (pulse) * 30 ID max (continuous) 100 μs * (A) 10 Drain current ID Avalanche energy EAS (mJ) 50 1 ms * 5 3 DC operation Tc = 25°C 1 0.5 300 200 100 0 25 0.3 50 75 100 125 150 Channel temperature (initial) Tch (°C) * Single nonrepetitive pulse Tc = 25°C 0.1 Curves must be derated linearly 0.05 0.03 with increase in temperature. 3 10 30 Drain–source voltage VDSS max 100 300 15 V 1000 BVDSS IAR −15 V VDS (V) VDD Test circuit RG = 25 Ω VDD = 90 V, L = 3.46 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2007-10-01 2SK3544 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01