EXCELICS EPA160A

Excelics
EPA160A/EPA160AV
DATA SHEET
High Efficiency Heterojunction Power FET
•
•
•
•
•
•
•
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN FOR EPA160A AND
10.0dB FOR EPA160AV AT 18GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA160AV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 40mA PER BIN RANGE
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA160A
O
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
PARAMETERS/TEST CONDITIONS
SYMBOLS
P1dB
G1dB
EPA160A
MIN
TYP
29.0
31.0
MAX
MIN
29.0
TYP
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
8.5
10.0
f=12GHz
45
46
31.0
9.5
UNIT
EPA160AV
MAX
31.0
dBm
31.0
11.5
10.0
12.0
dB
Gain at 1dB Compression
PAE
Vds=8V, Ids=50% Idss
Idss
Saturated Drain Current Vds=3V, Vgs=0V
290
480
Gm
Transconductance
Vds=3V, Vgs=0V
320
500
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
660
-1.0
290
480
320
500
-2.5
-1.0
BVgd
Drain Breakdown Voltage Igd=1.6mA
-11
-15
-11
-15
BVgs
Source Breakdown Voltage Igs=1.6mA
-7
-14
-7
-14
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
30
%
660
mA
mS
-2.5
V
V
V
o
22
C/W
O
MAXIMUM RATINGS AT 25 C
SYMBOLS
PARAMETERS
EPA160A
ABSOLUTE1
EPA160AV
CONTINUOUS2
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids
Drain Current
Idss
475mA
Idss
625mA
Igsf
Forward Gate Current
80mA
14mA
80mA
14mA
Pin
Input Power
28dBm
Tch
Channel Temperature
175oC
@ 3dB
Compression
150oC
o
28dBm
@ 3dB
Compression
175oC
o
150oC
o
Tstg
Storage Temperature
-65/175 C
-65/150 C
-65/175 C
-65/150oC
Pt
Total Power Dissipation
4.5W
3.8W
6.0W
5.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA160A/EPA160AV
DATA SHEET
High Efficiency Heterojunction Power FET
EPA160A
P-1dB & PAE vs. Vds
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
50
45
40
35
30
25
20
15
10
4
5
6
7
8
Pout (dBm) or PAE (%)
40
38
36
34
32
30
28
26
24
PAE (%)
P-1dB (dBm)
f = 12 GHz
Ids = 50% Idss
50
PAE
40
30
Pout
20
10
0
-5
0
Drain-Source Voltage (V)
5
10
15
20
25
Pin (dBm)
S-PARAMETERS
EPA160A
8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 --MAG ANG
0.915 -119.9
0.907 -149.2
0.907 -168.1
0.908 -180.0
0.912 174.7
0.918 170.0
0.923 165.9
0.931 162.9
0.936 160.3
0.941 159.3
0.936 158.5
EPA160AV
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 --MAG ANG
0.922 -115.7
0.914 -146.8
0.917 -165.9
0.923 -176.7
0.929 -177.6
0.930 -178.2
0.936 175.2
0.941 171.3
0.950 167.4
0.953 168.3
0.955 165.1
--- S21 --MAG ANG
14.906 114.4
8.322 96.0
4.370 77.6
2.898 63.8
2.172 52.5
1.693 41.7
1.349 31.4
1.084 22.4
0.896 13.7
0.761 5.9
0.675 -2.0
--- S12 --MAG ANG
0.027 31.0
0.029 19.1
0.031 14.5
0.030 14.2
0.030 16.0
0.028 17.0
0.028 21.7
0.028 23.4
0.028 25.0
0.029 25.3
0.031 25.6
--- S22 --FREQ
--- S11 --MAG ANG (GHz) MAG ANG
0.302 -128.9 21.0 0.932 155.6
0.331 -146.1 22.0 0.932 150.8
0.362 -151.0 24.0 0.932 143.6
0.411 -150.0 26.0 0.928 139.3
0.448 -152.1 28.0 0.917 135.6
0.498 -155.7 30.0 0.917 133.4
0.549 -160.3 32.0 0.912 128.2
0.601 -162.8 34.0 0.915 123.6
0.658 -166.7 36.0 0.942 126.8
0.697 -170.4 38.0 0.957 129.8
0.725 -175.6 40.0 0.952 138.3
--- S21 --MAG ANG
0.642 -5.2
0.601 -8.9
0.526 -16.4
0.460 -23.2
0.403 -31.9
0.350 -39.1
0.294 -46.1
0.255 -50.3
0.223 -52.3
0.212 -53.8
0.205 -60.1
--- S12 --MAG ANG
0.035 25.7
0.035 26.0
0.040 27.1
0.043 28.0
0.049 25.7
0.051 20.1
0.048 19.9
0.048 23.0
0.048 22.2
0.055 17.0
0.055
4.9
--- S22 --MAG ANG
0.744 -175.4
0.747 -174.5
0.778 -175.2
0.783 -179.1
0.820 170.8
0.834 164.0
0.865 162.3
0.876 163.9
0.869 162.9
0.872 158.9
0.843 147.4
--- S12 --MAG ANG
0.027 30.9
0.031 17.2
0.030 7.9
0.029 4.3
0.027 4.6
0.025 4.2
0.023 1.8
0.021 1.5
0.021 2.2
0.022 3.2
0.022 3.0
--- S22 --FREQ
--- S11 --MAG ANG (GHz) MAG ANG
0.271 -114.5 21.0 0.957 163.3
0.299 -134.2 22.0 0.956 162.5
0.341 -140.5 24.0 0.954 159.0
0.393 -140.1 26.0 0.953 158.6
0.430 -148.0 28.0 0.932 153.0
0.485 -157.8 30.0 0.918 146.4
0.556 -161.5 32.0 0.877 145.0
0.626 -167.2 34.0 0.934 144.2
0.688 -170.1 36.0 0.968 144.4
0.732 -176.3 38.0 0.985 146.4
0.768 -177.8 40.0 0.986 146.4
--- S21 --MAG ANG
0.582 -11.9
0.536 -15.4
0.452 -22.5
0.384 -30.1
0.335 -37.8
0.295 -46.5
0.262 -56.0
0.229 -63.9
0.214 -69.5
0.201 -74.3
0.189 -77.5
--- S12 --MAG ANG
0.023
5.0
0.024
4.2
0.024
8.6
0.026 10.9
0.026 11.9
0.028
9.1
0.027 -0.3
0.024 -3.7
0.025 -6.0
0.028 -22.8
0.035 -40.3
--- S22 --MAG ANG
0.766 -179.4
0.786 179.1
0.821 176.3
0.844 169.1
0.880 165.4
0.899 161.7
0.949 153.2
0.896 146.3
0.916 141.6
0.952 137.4
0.952 137.2
8V, 1/2 Idss
--- S21 --MAG ANG
13.969 116.1
7.872 96.1
4.057 76.9
2.690 63.0
2.027 51.5
1.596 40.1
1.273 28.3
1.025 17.7
0.833 8.1
0.695 0.3
0.597 -7.2
Note: The data included 0.7 mils diameter Au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA160AV.