PANASONIC CNC7H001

Optoisolators (Photocouplers)
CNC7H001
Optoisolator
Unit: mm
■ Features
4.4
7.0±0.3
9
1
8
0.4
1.27
0.1±0.1
• Suited for interface circuits requiring high density mounting of
parts, especially hybrid ICs and programmable controllers
• Signal transfer between circuits with different potentials and with
impedances
Input (light
Rating
Unit
IF
±50
mA
IFP
±1
A
PD
75
mW/ch
IC
50
mA
Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage
VECO
7
V
Forward current (DC)
emitting diode) Pulse forward current *1
Power dissipation *2
Output (photo Collector current
transistor)
Symbol
Collector power dissipation *3
PC
120
mW/ch
Isolation voltage, input to output *4
VISO
2 500
V[rms]
Operating ambient temperature
Topr
−30 to +100
°C
Storage temperature
Tstg
−55 to +125
°C
0.5±0.3
1, 3, 5, 7
: Anode/Cathode
2, 4, 6, 8
: Cathode/Anode
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
PCTFG116-001 Package
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(1.3)
0.15+0.10
-0.05
■ Applications
10.3±0.3
16
2.0
• Housed in a surface mount package alternative to mini-flat package
of 1.27 mm pitch
• Double molded package
• 2.5 kV isolation voltage
• UL approved (File No. E79920)
Pin Connection
16
1
15 14
2
3
13 12
4
5
11 10
6
7
9
8
Top View
Note) *1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs
*2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C.
*3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C.
*4: AC voltage (t = 1.0 min., RH < 60%)
Publication date: May 2002
SHF00007AED
1
CNC7H001
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Input
Symbol
Forward voltage
diode
Capacitance
Output
Collector-emitter dark current
transistor Collector-emitter voltage
Emitter-collector voltage
IF = ±50 mA
Ct
Unit
1.5
V
100
nA
15
5
VCEO
IC = 100 µA
80
V
VECO
IE = 10 µA
7
V
VCE = 10 V, f = 1 MHz
VCE = 5 V, IF = ±5 mA
Capacitance
CISO
f = 1 MHz
Resistance
RISO
VISO = 500 V
Fall time *3
Max
VCE = 20 V
CC
Rise time
Typ
1.35
VR = 0 V, f = 1 MHz
CTR
*2
Min
ICEO
Current transfer ratio *1
Collector capacitance
Coupled
Conditions
VF
pF
10
100
pF
600
0.6
pF
Ω
1011
tr
VCC = 10 V, IC = 2 mA
4
tf
RL = 100 Ω
3
Saturation voltage
VCE(sat)
IF = ±20 mA, IC = 1 mA
Collector current ratio *4
IC(Ratio)
VCE = 5 V, IF = ±5 mA
%
µs
0.1
0.2
V
1
3.0

0.33
Note) *1: CTR = IC / IF × 100%
*2: Rise time is defined as the time required for the collector current to rise from 10% to 90% of peak value.
*3: Fall time is defined as the time required for the collector current to decrease from 90% to 10% of peak value.
IC2 (IF = IF2 , VCE = 5 V)
*4:
IC(Ratio) =
IC1 (IF = IF1 , VCE = 5 V)
Input and output are practiced by electricity.
The device is designed be disregarded radiation.
IF  V F
60
Ta = 25°C
VCC = 5 V
Ta = 25°C
80
PD
40
Collector current IC (mA)
50
120
40
30
20
10
1
10−1
10
0
−20
0
0
20
40
60
80
100 120
Ambient temperature Ta (°C)
2
IC  I F
102
PC
Forward current IF (mA)
Collector power dissipation , power dissipation PC , PD (mW)
PC , PD  Ta
160
0
0.4
0.8
1.2
1.6
2.0
Forward voltage VF (V)
SHF00007AED
2.4
10−2
10−1
1
10
Forward current IF (mA)
102
CNC7H001
10 mA
20
5 mA
10
2 mA
1 mA
0
4
6
8
10
100
60
20
−20
12
0
20
tr  I C
Fall time tf (µs)
Rise time tr (µs)
100 Ω
1
Sig. in VCC
V2
1
500 Ω
100 Ω
1
10−1
V1
RL
10−1
V2
tr
td
90%
10%
10
Collector current IC (mA)
102
Sig. in VCC
V1
V1
V2
50 Ω
tf
10−2
10−1
RL
1
0
20
40
60
80
100
Ambient temperature Ta (°C)
RL = 1 kΩ
10
500 Ω
V1
1
10−2
−40 −20
100
102
VCC = 10 V
Ta = 25°C
RL = 1 kΩ
50 Ω
10
Frequency characteristics
102
VCC = 10 V
Ta = 25°C
10
80
102
tf  IC
102
10−2
10−1
60
103
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
10−1
40
VCE = 20 V
V2
tr
td
10
1
10−1
90%
10%
tf
10
Collector current IC (mA)
SHF00007AED
Ta = 25°C
IF = 5 mA
2
140
Relative power output P (dB)
0
ICEO  Ta
104
Collector-emitter dark current ICEO (nA)
15 mA
30
Relative collector current ∆IC (%)
20 mA
40
Collector current IC (mA)
∆IC  Ta
180
IF = 30 mA
25 mA
10−2
102
2 mA
IC  VCE
50
1
10
102
103
Frequency f (kHz)
3
Caution for Safety
■ Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when
disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this book is limited to showing representative characteristics
and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY