Optoisolators (Photocouplers) CNC7H001 Optoisolator Unit: mm ■ Features 4.4 7.0±0.3 9 1 8 0.4 1.27 0.1±0.1 • Suited for interface circuits requiring high density mounting of parts, especially hybrid ICs and programmable controllers • Signal transfer between circuits with different potentials and with impedances Input (light Rating Unit IF ±50 mA IFP ±1 A PD 75 mW/ch IC 50 mA Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Forward current (DC) emitting diode) Pulse forward current *1 Power dissipation *2 Output (photo Collector current transistor) Symbol Collector power dissipation *3 PC 120 mW/ch Isolation voltage, input to output *4 VISO 2 500 V[rms] Operating ambient temperature Topr −30 to +100 °C Storage temperature Tstg −55 to +125 °C 0.5±0.3 1, 3, 5, 7 : Anode/Cathode 2, 4, 6, 8 : Cathode/Anode 9, 11, 13, 15 : Emitter 10, 12, 14, 16: Collector PCTFG116-001 Package ■ Absolute Maximum Ratings Ta = 25°C Parameter (1.3) 0.15+0.10 -0.05 ■ Applications 10.3±0.3 16 2.0 • Housed in a surface mount package alternative to mini-flat package of 1.27 mm pitch • Double molded package • 2.5 kV isolation voltage • UL approved (File No. E79920) Pin Connection 16 1 15 14 2 3 13 12 4 5 11 10 6 7 9 8 Top View Note) *1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs *2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C. *3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C. *4: AC voltage (t = 1.0 min., RH < 60%) Publication date: May 2002 SHF00007AED 1 CNC7H001 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Input Symbol Forward voltage diode Capacitance Output Collector-emitter dark current transistor Collector-emitter voltage Emitter-collector voltage IF = ±50 mA Ct Unit 1.5 V 100 nA 15 5 VCEO IC = 100 µA 80 V VECO IE = 10 µA 7 V VCE = 10 V, f = 1 MHz VCE = 5 V, IF = ±5 mA Capacitance CISO f = 1 MHz Resistance RISO VISO = 500 V Fall time *3 Max VCE = 20 V CC Rise time Typ 1.35 VR = 0 V, f = 1 MHz CTR *2 Min ICEO Current transfer ratio *1 Collector capacitance Coupled Conditions VF pF 10 100 pF 600 0.6 pF Ω 1011 tr VCC = 10 V, IC = 2 mA 4 tf RL = 100 Ω 3 Saturation voltage VCE(sat) IF = ±20 mA, IC = 1 mA Collector current ratio *4 IC(Ratio) VCE = 5 V, IF = ±5 mA % µs 0.1 0.2 V 1 3.0 0.33 Note) *1: CTR = IC / IF × 100% *2: Rise time is defined as the time required for the collector current to rise from 10% to 90% of peak value. *3: Fall time is defined as the time required for the collector current to decrease from 90% to 10% of peak value. IC2 (IF = IF2 , VCE = 5 V) *4: IC(Ratio) = IC1 (IF = IF1 , VCE = 5 V) Input and output are practiced by electricity. The device is designed be disregarded radiation. IF V F 60 Ta = 25°C VCC = 5 V Ta = 25°C 80 PD 40 Collector current IC (mA) 50 120 40 30 20 10 1 10−1 10 0 −20 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 2 IC I F 102 PC Forward current IF (mA) Collector power dissipation , power dissipation PC , PD (mW) PC , PD Ta 160 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) SHF00007AED 2.4 10−2 10−1 1 10 Forward current IF (mA) 102 CNC7H001 10 mA 20 5 mA 10 2 mA 1 mA 0 4 6 8 10 100 60 20 −20 12 0 20 tr I C Fall time tf (µs) Rise time tr (µs) 100 Ω 1 Sig. in VCC V2 1 500 Ω 100 Ω 1 10−1 V1 RL 10−1 V2 tr td 90% 10% 10 Collector current IC (mA) 102 Sig. in VCC V1 V1 V2 50 Ω tf 10−2 10−1 RL 1 0 20 40 60 80 100 Ambient temperature Ta (°C) RL = 1 kΩ 10 500 Ω V1 1 10−2 −40 −20 100 102 VCC = 10 V Ta = 25°C RL = 1 kΩ 50 Ω 10 Frequency characteristics 102 VCC = 10 V Ta = 25°C 10 80 102 tf IC 102 10−2 10−1 60 103 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 10−1 40 VCE = 20 V V2 tr td 10 1 10−1 90% 10% tf 10 Collector current IC (mA) SHF00007AED Ta = 25°C IF = 5 mA 2 140 Relative power output P (dB) 0 ICEO Ta 104 Collector-emitter dark current ICEO (nA) 15 mA 30 Relative collector current ∆IC (%) 20 mA 40 Collector current IC (mA) ∆IC Ta 180 IF = 30 mA 25 mA 10−2 102 2 mA IC VCE 50 1 10 102 103 Frequency f (kHz) 3 Caution for Safety ■ Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 MAY