Transistors 2SB0643, 2SB0644 (2SB643, 2SB644) Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 ■ Absolute Maximum Ratings Ta = 25°C 2SB0643 Collector to emitter voltage 2SB0643 Symbol Rating Unit VCBO −30 V −60 2SB0644 V 0.45±0.05 0.55±0.1 3 −25 VCEO 2 (2.5) 1 (2.5) −50 2SB0644 4.1±0.2 2.0±0.2 (0.85) 1.25±0.05 Parameter Collector to base voltage 2.4±0.2 1.0±0.1 • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board R 0.7 4.5±0.1 ■ Features 3.5±0.1 (0.4) For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) −7 Emitter to base voltage VEBO V Peak collector current ICP −1 A Collector current IC − 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C Parameter Symbol Collector cutoff current Collector to base voltage 2SB0643 Collector to emitter voltage 2SB0643 Conditions Min Unit ICBO VCB = −20 V, IE = 0 −100 nA VCE = −20 V, IB = 0 −1 µA VCBO IC = −10 µA, IE = 0 −30 V −60 VCEO IC = −2 mA, IB = 0 −25 V −50 2SB0644 Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance Max ICEO 2SB0644 Transition frequency Typ VCB = −10 V, IE = 0, f = 1 MHz Cob V 340 90 − 0.35 − 0.6 200 6 V MHz 15 pF Note) *1: Pulse measurement *2: hFE Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: August 2002 SJC00046BED 1 2SB0643, 2SB0643A IC VCE 700 −700 600 −600 −1 mA −100 100 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) −4 0 −3 Ta = 75°C 25°C −100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) −10 −1 −3 −10 −10 −3 25°C −1 75°C 160 120 80 40 5 10 −3 300 Ta = 75°C 25°C −25°C 200 100 20 30 50 Emitter current IE (mA) 100 −1 −3 −10 Collector current IC (A) ICEO Ta 104 IE = 0 f = 1 MHz Ta = 25°C 20 −10 400 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 VCE = −10 V 103 16 ICEO (Ta) ICEO (Ta = 25°C) 200 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C −8 500 Cob VCB 24 −6 VCE = −10 V Collector current IC (A) fT I E Transition frequency fT (MHz) Ta = −25°C −1 −4 hFE IC −30 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 240 2 3 −2 600 IC / IB = 10 Collector current IC (A) 1 0 Base current IB (mA) − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 2 0 −20 − 0.1 − 0.03 0 −16 − 0.3 −25°C − 0.1 −12 VBE(sat) IC −30 − 0.3 −8 Collector to emitter voltage VCE (V) IC / IB = 10 −1 −200 −100 VCE(sat) IC −100 −300 Forward current transfer ratio hFE 0 −400 −2 mA −200 200 −500 −3 mA −300 300 VCE = −10 V Ta = 25°C −600 −4 mA −400 400 −800 −700 IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −500 500 IC IB Ta = 25°C Collector current IC (mA) −800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 12 8 102 10 4 0 −1 −2 −3 −5 −10 −20 −30 −50 −100 Collector to base voltage VCB (V) SJC00046BED 1 0 40 80 120 160 Ambient temperature Ta (°C) 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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