PANASONIC 2SC4627J

Transistors
2SC4627J
Silicon NPN epitaxial planar type
1.60+0.05
–0.03
1.00±0.05
■ Features
Unit: mm
0.80±0.05
For high-frequency amplification
0.12+0.03
–0.01
0 to 0.02
(0.50)(0.50)
5˚
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.375)
1.60±0.05
0.10 max.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5˚
2
(0.80)
1
0.27±0.02
0.70+0.05
–0.03
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
0.85+0.05
–0.03
3
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: U
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
30
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
3
V
Base-emitter voltage
VBE
VCB = 6 V, IE = −1 mA
Forward current transfer ratio *
hFE
VCB = 6 V, IE = −1 mA
65
450
720
Unit
mV
160

Transition frequency
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
Noise figure
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
dB
650
MHz
1.0
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
C
hFE
65 to 160
Publication date: March 2003
SJC00163AED
1
2SC4627J
PC  Ta
IC  VCE
100
75
50
25
Ta = 25°C
12
10
IB = 100 µA
10
8
80 µA
6
60 µA
4
40 µA
2
20 µA
0
40
80
120
160
0
4
VCE = 6 V
Collector current IC (mA)
50
40
25°C
Ta = 75°C
−25°C
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
10
25°C
Ta = 75°C
0.1
−25°C
0.01
0.001
0.1
1
10
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
f = 1 MHz
IE = 0
Ta = 25°C
1.5
1.0
0.5
1
10
100
Collector-base voltage VCB (V)
2
30
60
SJC00163AED
90
120
150
180
hFE  IC
1
2.0
0
0
Base current IB (µA)
120
IC / IB = 10
Cob  VCB
2.5
0
16
Collector current IC (mA)
Base-emitter voltage VBE (V)
3.0
4
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VBE
60
0
12
6
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
30
8
8
2
Forward current transfer ratio hFE
0
VCE = 6 V
Ta = 25°C
Collector current IC (mA)
Collector current IC (mA)
Collector power dissipation PC (mW)
125
0
IC  I B
12
150
100
VCE = 6 V
100 Ta = 75°C
25°C
80
−25°C
60
40
20
0
1
10
100
Collector current IC (mA)
1 000
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL