Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification (0.425) Unit: mm 0.3+0.1 –0.0 ■ Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 ■ Absolute Maximum Ratings Ta = 25°C 2 0.2±0.1 1 (0.65) (0.65) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.3±0.1 2.0±0.2 10˚ 0 to 0.1 Parameter 1 : Base 2 : Emitter 3 : Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 2V ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Conditions hFE VCE = 2 V, IC = 0.5 A VCE(sat) IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 50 mA fT Collector output capacitance (Common base, input open circuited) Cob ON resistanse *3 Ron Min Typ Max Unit V 200 0.14 100 nA 800 0.40 V 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF 1.0 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification *3: Ron Measuremet circuit Rank R S T hFE 200 to 350 300 to 500 400 to 800 1 kΩ IB = 1 mA f = 1 kHz V = 0.3 V VB Ron = Publication date: February 2003 SJC00284BED VV VA VB × 1 000 (Ω) VA − VB 1 2SD2623 IC VCE VCE(sat) IC 120 Collector current IC (A) 80 40 0 2.0 mA 0.6 1.5 mA 1.0 mA 0.4 0.5 mA 0.2 0 40 80 120 0 160 Ambient temperature Ta (°C) Ta = 25°C 0 1 2 Ta = −25°C 75°C 0.1 0.01 1 10 102 103 104 Collector current IC (µA) 2 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 25°C 5 6 105 Ta = 75°C 25°C 360 −25°C 240 120 0 0.1 1 10 100 Collector current IC (mA) SJC00284BED Ta = 75°C 25°C −25°C 0.01 0.001 0.1 1 10 100 1 000 Collector current IC (mA) Cob VCB VCE = 2 V 480 IC / IB = 25 0.1 hFE IC 600 IC / IB = 10 1 4 1 Collector-emitter voltage VCE (V) VBE(sat) IC 10 3 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) IB = 4.0 mA 3.5 mA 3.0 mA 2.5 mA 0.8 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 160 100 f = 1 MHz Ta = 25°C 10 1 0 10 20 Collector-base voltage VCB (V) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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