Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 5˚ ■ Features 2.8+0.2 –0.3 1.50+0.25 –0.05 3 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO 300 V Collector-emitter voltage (Base open) VCEO 300 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 70 mA Peak collector current ICP 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter Collector-base voltage (Emitter open) 1.1+0.2 –0.1 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 7H ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 120 V, IB = 0 hFE VCE = 10 V, IC = 5 mA VCE(sat) IC = 50 mA, IB = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Forward current transfer ratio * Collector-emitter saturation voltage Collector output capacitance (Common base, input open circuited) Transition frequency Cob Conditions VCB = 10 V, IE = −10 mA, f = 200 MHz fT Min Typ Max 300 V 7 V 60 50 Unit 80 1 µA 220 1.2 V 10 pF MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 60 to 150 100 to 220 Publication date: November 2002 SJC00290AED 1 2SC5863 PC Ta IC VCE 80 0.9 mA IB = 1.0 mA 0.8 mA 0.7 mA 0.6 mA 60 0.5 mA 0.3 mA 50 0.4 mA 0.2 mA 40 150 100 30 0.1 mA 20 50 0 20 40 60 80 100 120 140 160 0 2 Forward current transfer ratio hFE VCE = 10 V Ta = 85°C 25°C −25°C 0.1 1 10 100 Collector current IC (mA) 40 8 10 0 12 0 0.2 0.4 1 000 Ta = 85°C 25°C −25°C 80 40 0 1 10 Collector current IC (mA) SJC00290AED 0.8 1.0 1.2 1.4 Cob VCB 160 120 0.6 Base-emitter voltage VBE (V) hFE IC 1 0.01 0.1 6 200 IC / IB = 10 −25°C 25°C 60 Collector-emitter voltage VCE (V) VCE(sat) IC 10 4 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Ta = 85°C 80 20 10 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) VCE = 10 V 100 Collector current IC (mA) 200 0 2 IC VBE 120 Ta = 25°C 70 Collector current IC (mA) Collector power dissipation PC (mW) 250 100 100 f = 1 MHz Ta = 25°C 10 1 0 10 20 30 Collector-base voltage VCB (V) 40 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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