PANASONIC 2SC5863

Transistors
2SC5863
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
(0.95) (0.95)
1.9±0.1
(0.65)
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
5˚
■ Features
2.8+0.2
–0.3
1.50+0.25
–0.05
3
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Rating
Unit
VCBO
300
V
Collector-emitter voltage (Base open)
VCEO
300
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1.1+0.3
–0.1
Symbol
0 to 0.1
Parameter
Collector-base voltage (Emitter open)
1.1+0.2
–0.1
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 7H
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = 100 µA, IB = 0
Emitter-base voltage (Collector open)
VEBO
IE = 1 µA, IC = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 120 V, IB = 0
hFE
VCE = 10 V, IC = 5 mA
VCE(sat)
IC = 50 mA, IB = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Forward current transfer ratio *
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Cob
Conditions
VCB = 10 V, IE = −10 mA, f = 200 MHz
fT
Min
Typ
Max
300
V
7
V
60
50
Unit
80
1
µA
220

1.2
V
10
pF
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 150
100 to 220
Publication date: November 2002
SJC00290AED
1
2SC5863
PC  Ta
IC  VCE
80
0.9 mA IB = 1.0 mA
0.8 mA
0.7 mA
0.6 mA
60
0.5 mA
0.3 mA
50 0.4 mA
0.2 mA
40
150
100
30
0.1 mA
20
50
0
20
40
60
80 100 120 140 160
0
2
Forward current transfer ratio hFE
VCE = 10 V
Ta = 85°C
25°C
−25°C
0.1
1
10
100
Collector current IC (mA)
40
8
10
0
12
0
0.2
0.4
1 000
Ta = 85°C
25°C
−25°C
80
40
0
1
10
Collector current IC (mA)
SJC00290AED
0.8
1.0
1.2
1.4
Cob  VCB
160
120
0.6
Base-emitter voltage VBE (V)
hFE  IC
1
0.01
0.1
6
200
IC / IB = 10
−25°C
25°C
60
Collector-emitter voltage VCE (V)
VCE(sat)  IC
10
4
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
Ta = 85°C
80
20
10
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
VCE = 10 V
100
Collector current IC (mA)
200
0
2
IC  VBE
120
Ta = 25°C
70
Collector current IC (mA)
Collector power dissipation PC (mW)
250
100
100
f = 1 MHz
Ta = 25°C
10
1
0
10
20
30
Collector-base voltage VCB (V)
40
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2002 JUL