PANASONIC 2SC5839

Transistors
2SC5839
Silicon NPN epitaxial planar type
For low-voltage high-frequency amplification
Unit: mm
3
2
1
0.39+0.01
−0.03
1.00±0.05
0.25±0.05
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
9
V
Collector-emitter voltage (Base open)
VCEO
6
V
Emitter-base voltage (Collector open)
VEBO
2
V
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.25±0.05
1
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
0.15±0.05
0.05±0.03
0.35±0.01
• High transition frequency fT
• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
0.60±0.05
■ Features
3
0.65±0.01
2
0.05±0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Marking Symbol: 1N
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open)
ICBO
VCB = 5 V, IE = 0
Conditions
Min
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
Forward current transfer ratio
hFE
VCE = 3 V, IC = 10 mA
Transition frequency
fT
VCE = 3 V, IC = 10 mA, f = 1.5 GHz
10
GHz
Forward transfer gain
S21e2
VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz
6.5
dB
40
Typ
100
Noise figure
NF
VCE = 0.3 V, IC = 1 mA, f = 0.9 GHz
1.7
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.4
Max
Unit
1
µA
1
µA
160

dB
0.7
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJC00289AED
1
2SC5839
PC  Ta
IC  VCE
120
60
40
20
50
400 µA
40
300 µA
30
200 µA
20
100 µA
10
0
20
40
60
80
100 120 140
0
1
−25°C
10
Collector current IC (mA)
2
0
0.2
100
Ta = 85°C
120
25°C
−25°C
40
0
1
10
Collector current IC (A)
SJC00289AED
0.4
0.6
0.8
1.0
1.2
1.4
Base-emitter voltage VBE (V)
Cob  VCB
160
80
−25°C
Ta = 85°C
40
0
6
VCE = 3 V
Ta = 85°C
1
5
60
hFE  IC
25°C
0.01
4
200
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
VCE(sat)  IC
IC / IB = 10
0.1
3
25°C
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
1
2
80
20
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
100
500 µA
Collector current IC (mA)
80
VCE = 3 V
IB = 600 µA
100
Collector current IC (mA)
Collector power dissipation PC (mW)
Ta = 25°C
60
0
IC  VBE
70
120
100
10
f = 1 MHz
Ta = 25°C
1
0
2
4
6
8
10
Collector-base voltage VCB (V)
12
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL