Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification Unit: mm 0.33+0.05 –0.02 Features 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 Collector-base voltage (Emitter open) VCBO –30 V Collector-emitter voltage (Base open) VCEO –20 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C 5° 1: Base 2: Emitter 3: Collector 0.15 max. Unit 0.52±0.03 Rating 0 to 0.01 Symbol 0.15 min. 5° (0.40) (0.40) Absolute Maximum Ratings Ta = 25°C Parameter 2 0.15 min. 1 0.23+0.05 –0.02 1.20±0.05 0.80±0.05 3 High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. SSSMini3-F1 Package Marking Symbol : E Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Base-emitter voltage VBE VCE = –10 V, IC = –1 mA Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0 – 0.1 µA Collector-emitter cut-off current (Base open) ICEO VCE = –20 V, IB = 0 –100 µA Emitter-base cut-off current (Collector open) IEBO VEB = –5 V, IC = 0 –10 µA Forward current transfer ratio hFE VCB = –10 V, IE = 1 mA 220 VCE(sat) IC = –10 mA, IB = –1 mA Collector-emitter saturation voltage – 0.7 Unit 70 150 V – 0.1 V 300 MHz Transition frequency fT VCB = –10 V, IE = 1 mA, f = 200 MHz Noise figure NF VCB = –10 V, IE = 1 mA, f = 5 MHz 2.8 dB Reverse transfer impedance Zrb VCB = –10 V, IE = 1 mA, f = 2 MHz 22 Ω Common-emitter reverse transfer capacitance Cre VCB = –10 V, IE = 1 mA, f = 10.7 MHz 1.2 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00330AED 1 2SA2164 2SA2164_ PC-Ta IC VCE −25 VCE = −10 V 80 60 40 20 20 40 80 60 −200 µA −15 −100 µA −10 −50 µA −5 0 100 120 140 −150 µA −10 Ta = 85°C −20 25°C −15 −25°C −10 −5 0 −2 −4 −6 −8 −10 0 − 0.3 − 0.4 − 0.5 − 0.6 − 0.7 − 0.8 − 0.9 −1 −12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) 2SA2164_ VCE(sat)-IC 2SA2164_ hFE-IC 2SA2164_ Cob-VCB hFE IC Cob VCB 160 IC / IB = 10 −1 Ta = 85°C − 0.1 − 0.01 − 0.1 −25 −25°C 25°C −1 −10 Collector current IC (mA) −100 140 120 Ta = 85°C VCE = −10 V 25°C 100 80 −25°C 60 40 20 0 −0.1 −1 −10 Collector current IC (mA) SJC00330AED −100 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 −20 Collector current IC (mA) 100 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) IB = −300 µA Ta = 25°C VCE(sat) IC 2 IC VBE −30 −250 µA Collector current IC (mA) Collector power dissipation PC (mW) 120 0 2SA2164_ IC-VBE 2SA2164_ IC-VCE PC Ta 10 f = 1 MHz Ta = 25°C 1 0.1 0 5 10 15 20 25 30 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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