Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 2.90+0.20 –0.05 Rating Unit VCBO 185 V Collector-emitter voltage (Base open) VCEO 185 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 50 mA Peak collector current ICP 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Symbol 0 to 0.1 Parameter Collector-base voltage (Emitter open) 1.1+0.3 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol： L ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 185 Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 hFE VCE = 5 V, IC = 10 mA VCE(sat) IC = 30 mA, IB = 3 mA Forward current transfer ratio * Collector-emitter saturation voltage Conditions Min Typ Max Unit V V 90 1 µA 330 1 V VCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 150 mV Transition frequency fT Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE 90 to 155 130 to 220 185 to 330 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00196CED 1 2SD0814A PC Ta IC VCE 80 60 0.4 mA 40 0.2 mA 0 40 80 120 0 160 2 Ta = 75°C −25°C 0.01 0.1 1 6 8 600 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 1 0.1 4 10 100 Collector current IC (mA) 400 Ta = 75°C 300 25°C −25°C 200 100 0 0.1 1 10 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 3 2 1 3 10 30 100 Collector-base voltage VCB (V) 2 0 SJC00196CED 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) fT I E 500 IE = 0 f = 1 MHz Ta = 25°C 1 12 200 VCE = 10 V Cob VCB 5 10 hFE IC 10 25°C 40 0 0 VCE(sat) IC IC / IB = 10 −25°C 60 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 100 Ta = 75°C 80 20 20 40 0 Collector current IC (mA) Collector current IC (mA) 120 80 VCE = 10 V 25°C 100 IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA Transition frequency fT (MHz) Collector power dissipation PC (mW) 160 120 Ta = 25°C 100 200 0 IC VBE 120 240 100 VCB = 10 V Ta = 25°C 160 120 80 40 0 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL