Switching Diodes MA3S133 Silicon epitaxial planar type 0.28 ± 0.05 Unit : mm • Super-small SS-mini type package contained two elements, allowing high-density mounting • Two diodes are connected in series in the package VR 80 V Peak reverse voltage VRM 80 V Single 0.28 ± 0.05 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating Peak forward current 3 0.60 − 0.03 Symbol Single 1 2 ■ Absolute Maximum Ratings Ta = 25°C Forward current (DC) 1.60 ± 0.1 0.80 ± 0.05 + 0.05 ■ Features Parameter 0.80 1.60 − 0.03 0.80 0.80 0.51 0.51 For switching circuits 0.44 0.44 + 0.05 100 IF Series 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 SS-Mini Type Package (3-pin) 0.88 − 0.03 mA 65 IFM 200 Series mA 130 Junction temperature Tj 150 °C Marking Symbol: MP Storage temperature Tstg −55 to +150 °C Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance C t* 1 VR = 0 V, f = 1 MHz 5.5 pF C t* 2 VR = 0 V, f = 1 MHz 3.0 pF Reverse recovery time*3 80 *1 IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 150 ns trr*2 IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 9 ns trr Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 *3 : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω V W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3S133 Switching Diodes IF V F IR V R IF V F 10 000 1 000 1 000 Between pins 2 and 3 Between pins 1 and 3 Between pins 2 and 3 Between pins 1 and 3 Ta = 150°C 1 000 10 Ta = 150°C 1 100°C 25°C − 20°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 Ta = 150°C 100 100°C 25°C − 20°C 10 1 0.1 0 100 Reverse current IR (nA) Forward current IF (mA) Forward current IF (mA) 100 1.2 100°C 10 Ta = 150°C 100°C 1 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 0.01 1.2 25°C 0 20 Forward voltage VF (V) Forward voltage VF (V) VF Ta 40 VF Ta 100 120 Between pins 2 and 3 Between pins 1 and 3 Between pins 2 and 3 Between pins 1 and 3 80 IR Ta 1 000 1.6 1.6 60 Reverse voltage VR (V) 1.4 1.4 IF = 100 mA 0.8 0.6 10 mA 3 mA 0.4 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 Reverse current IR (nA) 1.0 Forward voltage VF (V) Forward voltage VF (V) 100 1.2 10 VR = 75 V 35 V 6V 1 VR = 75 V 35 V 0.1 0.2 0.2 0 −40 0 40 80 120 Ambient temperature Ta 160 0 −40 200 6V 0 40 Ct VR 4.0 3.0 2.0 Between pins 2 and 3 Between pins 1 and 3 0 20 40 60 80 100 Reverse voltage VR (V) 120 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 5.0 1.0 160 200 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 Between pins 2 and 3 10 3 Between pins 1 and 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 0.01 −40 0 40 80 120 160 Ambient temperature Ta (°C) IF(surge) tW f = 1 MHz Ta = 25°C 2 120 1 000 6.0 0 80 Ambient temperature Ta (°C) (°C) 30 200