PANASONIC 2SD1327

Power Transistors
2SD1327
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Unit: mm
●
●
0.7±0.1
■ Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60±10
V
Collector to emitter voltage
VCEO
60±10
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
12
A
Collector current
IC
8
A
Collector power TC=25°C
Ta=25°C
dissipation
45
PC
Junction temperature
Tj
Storage temperature
Tstg
4.2±0.2
2.7±0.2
7.5±0.2
16.7±0.3
(TC=25˚C)
5.5±0.2
φ3.1±0.1
4.0
●
14.0±0.5
●
Incorporating a zener diode of 60V zener voltage between collector and base
Minimized variation in the breakdown voltage
Large energy handling capability
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
4.2±0.2
1.4±0.1
Solder Dip
■ Features
●
10.0±0.2
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
W
2
150
˚C
–55 to +150
˚C
1.3±0.2
B
E
■
Electrical Characteristics (TC=25˚C)
Symbol
Parameter
min
Conditions
typ
max
Unit
Collector cutoff current
ICBO
VCB = 50V, IE = 0
100
µA
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
2
mA
Collector to emitter voltage
VCEO
IC = 5mA, IB = 0
50
70
V
hFE1*1
VCE = 3V, IC = 4A
2000
10000
500
Forward current transfer ratio
hFE2
VCE = 3V, IC = 8A
Collector to emitter saturation voltage
VCE(sat)
IC = 4A, IB = 8mA
Base to emitter saturation voltage
VBE(sat)
IC = 4A, IB = 8mA
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Energy handling capability
Es/b*2
*1h
FE1
Rank
hFE1
Q
P
2
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
50
V
V
20
MHz
0.5
µs
4
µs
1
IC = 1A, L = 100mH, RBE = 100Ω
*2E
s/b
Rank classification
1.5
µs
mJ
Test circuit
60Hz mercury relay
X
L
2000 to 5000 4000 to 10000
120Ω
6V
Y
RBE
1Ω
G
1
Power Transistors
2SD1327
PC — Ta
IC — VCE
VCE(sat) — IC
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
40
30
20
(2)
10
Collector to emitter saturation voltage VCE(sat) (V)
12
TC=25˚C
10
Collector current IC (A)
Collector power dissipation PC (W)
50
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
8
6
1.0mA
0.5mA
4
2
(3)
(4)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
3
4
5
30000
25˚C
25˚C
–25˚C
1000
0.3
0.1
0.03
10
300
100
30
10
0.1
30
Collector current IC (A)
0.3
1
3
10
30
ICP
10
t=1ms
IC
3
10ms
DC
1
0.3
0.1
1
3
10
30
100
300
Collector to emitter voltage VCE
2
1000
10
50mJ
3
1
(V)
0.3
1
3
10
30
Load inductance Lcoil (mH)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
30
RBE=100Ω
TC=25˚C
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
30
10
30
0.1
0.1
100
103
100
3
0.3
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
1
100
Collector current IC (A)
1000
300
0.3
300
TC=100˚C
3000
1
3
0.01
0.1
IC — Lcoil
Collector current IC (A)
TC=–25˚C
1
0.03
1000
10000
0.3
0.1
VCE=3V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
3
0.01
0.1
0.3
hFE — IC
IC/IB=500
100˚C
–25˚C
1
Collector current IC (A)
100000
10
TC=100˚C
25˚C
3
Collector to emitter voltage VCE (V)
VBE(sat) — IC
IC/IB=500
10
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
100