Power Transistors 2SD1327 Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit: mm ● ● 0.7±0.1 ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A Collector power TC=25°C Ta=25°C dissipation 45 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 (TC=25˚C) 5.5±0.2 φ3.1±0.1 4.0 ● 14.0±0.5 ● Incorporating a zener diode of 60V zener voltage between collector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 1.4±0.1 Solder Dip ■ Features ● 10.0±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C W 2 150 ˚C –55 to +150 ˚C 1.3±0.2 B E ■ Electrical Characteristics (TC=25˚C) Symbol Parameter min Conditions typ max Unit Collector cutoff current ICBO VCB = 50V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 2 mA Collector to emitter voltage VCEO IC = 5mA, IB = 0 50 70 V hFE1*1 VCE = 3V, IC = 4A 2000 10000 500 Forward current transfer ratio hFE2 VCE = 3V, IC = 8A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Energy handling capability Es/b*2 *1h FE1 Rank hFE1 Q P 2 IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 50 V V 20 MHz 0.5 µs 4 µs 1 IC = 1A, L = 100mH, RBE = 100Ω *2E s/b Rank classification 1.5 µs mJ Test circuit 60Hz mercury relay X L 2000 to 5000 4000 to 10000 120Ω 6V Y RBE 1Ω G 1 Power Transistors 2SD1327 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 40 30 20 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 12 TC=25˚C 10 Collector current IC (A) Collector power dissipation PC (W) 50 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 8 6 1.0mA 0.5mA 4 2 (3) (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 30000 25˚C 25˚C –25˚C 1000 0.3 0.1 0.03 10 300 100 30 10 0.1 30 Collector current IC (A) 0.3 1 3 10 30 ICP 10 t=1ms IC 3 10ms DC 1 0.3 0.1 1 3 10 30 100 300 Collector to emitter voltage VCE 2 1000 10 50mJ 3 1 (V) 0.3 1 3 10 30 Load inductance Lcoil (mH) (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 30 RBE=100Ω TC=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 30 10 30 0.1 0.1 100 103 100 3 0.3 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 1 100 Collector current IC (A) 1000 300 0.3 300 TC=100˚C 3000 1 3 0.01 0.1 IC — Lcoil Collector current IC (A) TC=–25˚C 1 0.03 1000 10000 0.3 0.1 VCE=3V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 3 0.01 0.1 0.3 hFE — IC IC/IB=500 100˚C –25˚C 1 Collector current IC (A) 100000 10 TC=100˚C 25˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=500 10 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100