Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm Parameter Symbol Collector to 2SD1263 base voltage 2SD1263A Collector to 2SD1263 350 VCBO 400 250 VCEO emitter voltage 2SD1263A Emitter to base voltage VEBO Peak collector current ICP 300 IC Collector current Collector power TC=25°C dissipation Ratings PC Ta=25°C Junction temperature Tj Storage temperature Tstg A current 2SD1263A Collector cutoff 2SD1263 current 2SD1263A Emitter cutoff current Collector to emitter 2SD1263 voltage 2SD1263A Forward current transfer ratio 0.7±0.1 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 A 150 ˚C –55 to +150 ˚C 1.3±0.2 0.5 +0.2 –0.1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W Symbol 2SD1263 2.7±0.2 (TC=25˚C) Parameter Collector cutoff V 1.5 2 ■ Electrical Characteristics V V 35 4.2±0.2 5.5±0.2 Unit 5 0.75 10.0±0.2 4.0 ■ Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 ● 16.7±0.3 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw ● Solder Dip ■ Features Conditions min typ max VCE = 350V, VBE = 0 1 VCE = 400V, VBE = 0 1 VCE = 150V, IB = 0 1 VCE = 200V, IB = 0 1 IEBO VEB = 5V, IC = 0 1 VCEO IC = 30mA, IB = 0 hFE1* VCE = 10V, IC = 0.3A 70 hFE2 VCE = 10V, IC = 1A 10 ICES ICEO 250 Unit mA mA mA V 300 250 Base to emitter voltage VBE VCE = 10V, IC = 1A 1.5 V Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD1263, 2SD1263A PC — Ta IC — VCE 40 (1) 30 20 (2) 10 4.0 TC=25˚C 1.0 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 1000 1 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 1 300 100 TC=100˚C 25˚C –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) t=1ms IC 10ms DC 0.1 0.03 0.001 1 3 10 30 100 2SD1263A 2SD1263 0.01 0.003 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.01 0.03 0.1 0.3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP 0.3 100 0.1 0.001 0.003 10 103 1 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=10MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.0 0.3 1 0.01 0.03 3 10 3 1.6 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 1000 IC/IB=10 10 0.4 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 3.2 (3) (4) 0 2 VCE=10V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 1