PANASONIC 2SD1446

Power Transistors
2SD1446
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
0.7±0.1
■ Absolute Maximum Ratings
16.7±0.3
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
10
A
Collector current
IC
6
A
Collector power TC=25°C
dissipation
Ta=25°C
40
PC
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
4.2±0.2
0.8±0.1
1.3±0.2
+0.2
0.5 –0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
(TC=25˚C)
Parameter
Symbol
ICBO
Conditions
min
typ
VCB = 350V, IE = 0
*
Collector to emitter voltage
VCEO(sus)
Emitter to base voltage
VEBO
IE = 0.1A, IC = 0
IC = 2A, L = 10mH
Forward current transfer ratio
hFE
VCE = 2V, IC = 2A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.06A
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.06A
Transition frequency
fT
VCE = 10V, IC = 1A, f = 1MHz
*V
CEO(sus)
1.4±0.1
E
■ Electrical Characteristics
Collector cutoff current
W
2
φ3.1±0.1
4.0
●
14.0±0.5
●
High foward current transfer ratio hFE
High collector to base voltage VCBO
Full-pack package which can be installed to the heat sink with
one screw
2.7±0.2
Solder Dip
●
5.5±0.2
7.5±0.2
■ Features
4.2±0.2
10.0±0.2
max
Unit
100
µA
400
V
5
V
500
1.5
2.5
15
V
V
MHz
Test circuit
50/60Hz
mercury relay
X
L 10mH
Y
120Ω
6V
1Ω
15V
G
1
Power Transistors
2SD1446, 2SD1446A
PC — Ta
IC — VCE
VCE(sat) — IC
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
60
50
(1)
40
Collector to emitter saturation voltage VCE(sat) (V)
5
Collector current IC (A)
Collector power dissipation PC (W)
80
30
20
IB=8mA
4
3
4.0mA
3.5mA
3.0mA
2.5mA
2
2.0mA
1
1.5mA
(2)
10
(3)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
4
5
1000
100˚C
25˚C
0.3
0.1
0.03
1
3
300
TC=100˚C
100
25˚C
30
–25˚C
10
0.01 0.03
10
Collector current IC (A)
0.1
0.3
1
3
Area of safe operation (ASO)
ICP
t=10µs
IC
3
1ms
DC
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
Collector to emitter voltage VCE
1000
(V)
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
10
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
IE=0
f=1MHz
TC=25˚C
103
102
10
0.3
1
3
10
30
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
100
Collector to base voltage VCB (V)
Rth(t) — t
102
30
–25˚C
0.3
1
0.1
10
Collector current IC (A)
100
Collector current IC (A)
Collector output capacitance Cob (pF)
Forward current transfer ratio hFE
VCE=2V
30000
3000
TC=–25˚C
0.3
1
Cob — VCB
10000
10
0.1
25˚C
TC=100˚C
104
IC/IB=50
1
3
hFE — IC
30
3
10
Collector current IC (A)
100000
0.01
0.01 0.03
2
6
IC/IB=50
30
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
Base to emitter saturation voltage VBE(sat) (V)
3
100
1
Time t (s)
10
102
103
104