FAIRCHILD NDH853N

May 1997
NDH853N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as battery powered
circuits or portable electronics where fast switching, low in-line
power loss, and resistance to transients are needed.
7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V
RDS(ON) = 0.025 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
___________________________________________________________________________________________
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
Parameter
NDH853N
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous
7.6
A
(Note 1a)
- Pulsed
PD
TJ,TSTG
23
Maximum Power Dissipation
(Note 1a)
1.8
(Note 1b)
1
(Note 1c)
0.9
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1
µA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
30
V
10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
V
TJ= 55°C
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ= 125°C
RDS(ON)
Static Drain-Source On-Resistance
1
1.5
2
0.7
1
1.6
0.014
0.017
0.02
0.031
0.021
0.025
VGS = 10 V, ID = 7.6 A
TJ= 125°C
VGS = 4.5 V, ID = 6.7 A
23
Ω
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
A
gFS
Forward Transconductance
VDS = 10 V, ID = 7.6 A
18
S
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1140
pF
630
pF
210
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 10 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V,
ID = 7.6 A, VGS = 10 V
14
30
ns
24
50
ns
73
120
ns
48
80
ns
38
50
nC
2.8
nC
12.7
nC
NDH853N Rev. C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1.5
A
1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.5 A
0.72
(Note 2)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t) =
T J −T A
R θJA (t)
=
T J −T A
R θJC +R θCA (t)
= I 2D(t) × R DS(ON)@T J
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 70oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper.
c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH853N Rev. C
Typical Electrical Characteristics
3
30
6.0
25
4.0
4.5
R DS(on) , NORMALIZED
3.5
20
15
10
3.0
5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS =10V
V GS = 3.5V
2.5
2
4.0
4.5
5.0
1.5
6.0
10
1
2.5
0
0.5
0
0.5
1
1.5
2
VDS , DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
5
Figure 1. On-Region Characteristics.
1.4
R DS(on) , NORMALIZED
V GS = 10V
1.2
1
0.8
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
1.8
I D = 7.6A
0.6
-50
V G S = 10 V
1.6
TJ = 125°C
1.4
1.2
25°C
1
-55°C
0.8
0.6
150
0
5
10
I D , DRAIN CURRENT (A)
15
20
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
30
T = -55°C
J
125°C
25°C
20
15
10
5
1
1.5
2
2.5
3
3.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
4.5
V th, NORMALIZED
25
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V DS = 10V
ID , DRAIN CURRENT (A)
25
Figure 2. On-Resistance Variation
withDrain Current and Gate Voltage.
1.6
0
0.5
10
15
20
I D , DRAIN CURRENT (A)
V DS = V GS
I D = 250µA
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. Gate Threshold Variation
with Temperature.
NDH853N Rev. C
30
1.1
I D = 250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
1
25°C
0.001
0.0001
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0
150
0.2
0.4
0.6
0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
10
V DS = 10V
I D = 7.6A
VGS , GATE-SOURCE VOLTAGE (V)
C iss
1000
C oss
500
300
C rss
f = 1 MHz
V GS = 0 V
0 .2
V
DS
0 .5
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
20
30
20V
8
15V
6
4
2
0
0
10
t d(on)
40
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VOUT
R GEN
30
t on
VDD
V IN
20
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
VGS
1.2
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
2000
CAPACITANCE (pF)
-55°C
0.01
3000
100
0 .1
TJ = 125°C
0.1
Figure 7. Breakdown Voltage Variation with
Temperature.
200
V GS = 0V
10
I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics (continued)
10%
10%
DUT
G
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDH853N Rev. C
Typical Electrical and Thermal Characteristics (continued)
2.5
35
30
25°C
25
20
125°C
15
10
5
g
FS
, TRANSCONDUCTANCE (SIEMENS)
STEADY-STATE POWER DISSIPATION (W)
T J = -55°C
V DS =10V
0
0
5
10
15
20
I D , DRAIN CURRENT (A)
25
1a
1.5
1b
1
1c
0.5
4.5"x5" FR-4 Board
o
TA = 2 5 C
Still Air
0
0
30
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
9
50
30
8
10
RD
S(O
N)
LIM
IT
10
I D, DRAIN CURRENT (A)
1a
7
6
1b
1c
4.5"x5" FR-4 Board
5
1
Figure 14. SOT-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 13. Transconductance Variation
with Drain Current and Temperature.
I D , STEADY-STATE DRAIN CURRENT (A)
2
0m
s
10
s
DC
VGS = 1 0 V
0.03
s
ms
1s
0.3
o
Still Air
10
10
1
TA = 2 5 C
s
1m
3
0.1
0u
SINGLE PULSE
R θ J A =See Note1c
TA = 25°C
VG S = 1 0 V
4
0
0.2
0.4
0.6
0.8
2
2oz COPPER MOUNTING PAD AREA (in )
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
1
0.01
0.1
0.2
0.5
V
DS
1
2
5
10
, DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 16. Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
0.5
D = 0.5
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1c
θ
0.3
0.2
0.1
0.2
0.1
P(pk)
0.05
t1
0.05
0.02
0.03
0.02
0.01
0.0001
t2
TJ - T
= P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
0.01
A
Single Pulse
0.001
0.01
0.1
t 1 , TIME (sec)
1
10
100
300
Figure 17. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDH853N Rev. C