ROHM RB061US-30

Data Sheet
Schottky Barrier Diode
RB061US-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Small power mold type. (TSMD8)
2)Low VF
3)High reliability
Land size figure (Unit : mm)
●
TSMD8
Structure
Silicon epitaxial planer
Structure
ROHM : TSMD8
Manufacture Date
●
(8）(7) (6) (5)
1pin mark
（1）
（2）
（3）
（4）
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180° Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF1
Forward voltage
VF2
Limits
30
30
2
8
125
- 40 to +125
Unit
V
V
A
A
°C
°C
Min.
Typ.
Max.
Unit
-
0.30
0.35
V
IF=1.0A
Conditions
-
0.35
0.40
V
IF=2.0A
Reverse current
IR
-
280
900
μA
VR=15V
Capacitance between terminal
Ct
-
80
-
pF
Reverse recovery time
trr
-
-
20
ns
VR=20V, f=1MHz
IF=0.5A, IR=1A, Irr=0.25*IR
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.09 - Rev.A
Data Sheet
RB061US-30
1000
10
Ta=75°C
Ta=125°C
100
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta=125°C
1
0.1
Ta=25°C
0.01
Ta=75°C
10
1
Ta=25°C
0.1
Ta=−25°C
0.01
Ta=−25°C
0.001
0.001
0
100
200
300
400
500
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
5
10
15
20
1000
30
400
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
25
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
Ta=25°C
VF=2A
n=30pcs
390
380
370
AVE:357.7mV
360
350
10
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
600
Ta=25°C
VR=15V
n=30pcs
250
200
AVE:147.5μA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
590
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(μA)
300
580
570
560
550
540
530
150
AVE:514.4pF
520
510
500
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
Data Sheet
RB061US-30
200
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
150
REVERSE RECOVERY TIME:trr(ns)
1cyc
175
8.3ms
125
100
AVE:58.5A
75
50
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE:8.2ns
10
5
25
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
80
8.3ms 8.3ms
1cyc
60
40
20
60
40
20
0
0
1
10
100
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
2
Mounted on epoxy board
1.8
Rth(j-a)
1.6
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
t
80
100
Rth(j-c)
10
1.4
D=1/2
1.2
Sin(θ＝180)
1
0.8
DC
0.6
0.4
0.2
1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
4
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.09 - Rev.A
Data Sheet
RB061US-30
0.015
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
3.5
0.01
DC
0.005
D=1/2
Sin(θ＝180)
0A
0V
DC
3
Io
t
VR
D=t/T
VR=15V
T Tj=125°C
D=1/2
2.5
2
1.5
Sin(θ＝180)
1
0.5
0
0
0
10
20
0
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
4/4
2011.09 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A