ROHM RBE07V20A

Data Sheet
Schottky Barrier Diode
RBE07V20A
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
0.1±0.1
0.05
Ｂ
2.1
0.9MIN.
2.5±0.2
Features
1)Small mold type. (UMD2)
2)High reliability
1.7±0.1
0.8MIN.
1.25±0.1
UMD2
Structure
0.7±0.2
0.1
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
Taping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.05
0.3±0.1
8.0±0.2
2.75
4.0±0.1
1.40±0.1
2.8±0.1
3.5±0.05
1.75±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
Unit
V
V
mA
A
C
C
30
20
700
3
125
40 to 125
Min.
Typ.
Max.
Unit
-
-
0.43
V
-
-
200
μA
1/4
Conditions
IF=500mA
VR=20V
2011.10 - Rev.A
Data Sheet
RBE07V20A
100000
1
Ta=125°C
Ta=75°C
REVERSE CURRENT:IR(μA)
FORWARD CURRENT:IF(A)
10000
Ta=125°C
0.1
Ta=25°C
0.01
Ta=-25°C
Ta=75°C
1000
100
Ta=25°C
10
Ta=-25°C
1
0.1
0.001
0
100
200
300
400
0
500
5
10
20
400
100
Ta=25°C
IF=500mA
n=30pcs
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
15
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
390
380
370
AVE:375.5mV
360
1
350
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
65
Ta=25°C
VR=20V
n=30pcs
150
AVE:83.4μA
100
50
Ta=25°C
f=1MHz
VR=0V
n=10pcs
64
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(μA)
200
63
62
AVE:62.8pF
61
0
60
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
30
40
IFSM
REVERSE RECOVERY TIME:trr(ns)
50
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RBE07V20A
1cyc
8.3ms
30
20
AVE:8.9A
10
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:5.8ns
5
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
20
20
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
15
8.3ms
1cyc
10
5
IFSM
t
15
10
5
0
0
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.6
10000
1000
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
0.4
Sin(θ＝180)
D.C.
0.2
10
1
0.001
D=1/2
0
0.01
0.1
1
10
100
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RBE07V20A
2
0.015
0A
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0V
0.01
DC
D=1/2
0.005
Sin(θ＝180)
t
1.5
T
VR
D=t/T
VR=10V
Tj=125°C
1
D=1/2
DC
0.5
Sin(θ＝180)
0
0
0
10
20
0
25
50
2
100
125
30
Io
0A
0V
No break at 30kV
25
VR
D=t/T
VR=10V
Tj=125°C
1.5
T
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
75
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
DC
1
D=1/2
0.5
Sin(θ＝180)
20
15
10
AVE:3.7kV
5
0
0
0
25
50
75
100
125
C=200pF
R=0Ω
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A