Data Sheet Schottky barrier diode RB160L-40 Dimensions (Unit : mm) Applications General rectification Land size figure (Unit : mm) 2.0 2.0 Construction Silicon epitaxial planer ① ② 0.1±0.02 0.1 5.0±0.3 4 1.2±0.3 3 4.5±0.2 3) High reliability 4.2 2.6±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR. PMDS 2.0±0.2 1.5±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM VR Average rectified forward current Io IFSM Forward current surge peak (60Hz / 1cyc) Junction temperature Tj Storage temperature Tstg (*1)Tc=90°C max Mounted on epoxy board. 180° Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Unit V V A A 40 40 1 70 150 40 to 150 Reverse voltage (repetitive peak) Reverse voltage (DC) C C Symbol VF IR1 Min. - Typ. - Max. 0.55 10 Unit V IR2 - - 100 A 1/3 A Conditions IF=1.0A VR=6V VR=40V 2011.04 - Rev.B Data Sheet RB160L-40 Electrical characteristic curves 100000 Ta=150℃ REVERSE CURRENT:IR(uA) Ta=125℃ 1000 Ta=25℃ Ta=-25℃ 0.01 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 Ta=25℃ IF=1A n=30pcs 500 490 480 470 REVERSE CURRENT:IR(uA) 510 AVE:489.6mV 460 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ VR=40V n=30pcs AVE:2.207uA 50 AVE:125.6A 0 REVERSE RECOVERY TIME:trr(ns) 100 220 210 200 190 180 170 AVE:192.7pF 150 Ct DISPERSION MAP 200 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 AVE:8.667ns Ifsm 150 8.3ms 8.3ms 1cyc 100 50 0 0 1 IFSM DISRESION MAP t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=10mA IF=0.5A 1 1ms 1.5 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 2 1000 250 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 230 160 20 1cyc 8.3ms 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 240 IR DISPERSION MAP 200 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 250 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 VF DISPERSION MAP Ifsm 10 40 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 100 1 0.01 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=150℃ 0.1 150 f=1MHz 10000 Ta=125℃ FORWARD VOLTAGE:VF(mV) 1000 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 DC 1 0.5 time 300us 0.1 0.01 D=1/2 Sin(θ＝180) 0 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 2011.04 - Rev.B 1 3 3 D=1/2 DC 0.4 0.2 Sin(θ＝180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 2.5 DC 2 t D=1/2 T VR D=t/T VR=20V Tj=150 1.5 1 0.5 0A 0V Io Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) Data Sheet RB160L-40 2.5 DC 2 D=1/2 Io t T VR D=t/T VR=20V Tj=150 1.5 1 0.5 Sin(θ＝180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:0T(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 AVE:8.70kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A