ROHM UMN20N

Data Sheet
Switching Diode
UMN20N
lApplications
General switching
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.65
lFeatures
1)Small mold type. (UMD6)
2)Low leakage
(5)
0.15±0.05
(4)
2.1±0.1
1.25±0.1
0.9
(6)
0.65
1.6
2.0±0.2
各リードとも
0.25± 0.1 Each
lead has same dimension
0.05
同寸法
0.35
(1)
(2)
0.65
lConstruction
Silicon epitaxial planer
0.1Min
0～0.1
(3)
0.65
lStructure
0.7
1.3±0.1
UMD6
0.9±0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (repetitive peak)
Average rectified forward current
Io
Isurge
Surge current (t=1sec)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Limits
40
35
225
100
400
150
Unit
V
V
mA
mA
mA
C
C
-55 to +150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
Reverse current
IR
-
-
0.01
μA
Capacitance between terminals
Ct
-
-
5.0
pF
VR=20V
VR=0.5V , f=1.0MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Data Sheet
UMN20N
100
1
Tj=150°C
FORWARD CURRENT:IF(A)
REVERSE CURRENT:IR(nA)
Tj=150°C
0.1
Tj=125°C
0.01
Tj=75°C
0.001
10
Tj=125°C
1
Tj=75°C
0.1
Tj=25°C
0.01
Tj=25°C
0.0001
0.001
0
0.5
1
1.5
0
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
5
10
15
20
25
4
35
40
980
f=1MHz
Tj=25°C
IF=100mA
n=50pcs
FORWARD VOLTAGE:VF(mV)
975
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
3
2
1
970
965
960
AVE.:950mV
955
950
945
940
935
930
0
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5
Tj=25°C
VR=20V
n=30pcs
40
30
20
AVE.:4.3pA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(pA)
50
4
3
2
AVE.:2.16pF
10
1
0
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0.5V
n=30pcs
2/4
2011.10 - Rev.A
10
0.45
9
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1×IR
n=10pcs
1cyc
REVERSE RECOVERY TIME:trr(us)
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
UMN20N
8
8.3ms
7
6
5
AVE.:4.0A
4
3
2
0.4
AVE:0.391us
0.35
1
0
0.3
trr DISPERSION MAP
IFSM DISPERSION MAP
5
6
IFSM
5
4
8.3ms 8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
4.5
1cyc.
3.5
3
2.5
2
1.5
1
IFSM
time
4
3
2
1
0.5
0
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
7
Rth(j-a)
AVE:5.83kV
5
4
3
AVE:2.30kV
2
1
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
6
C=150pF
R=330Ω
10
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
1
0.001
0
C=200pF
R=0Ω
100
3/4
2011.10 - Rev.A
Data Sheet
UMN20N
1.0E-06
0.16
D.C.
0.14
8.0E-07
D=1/2
0.1
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
0.12
Sin(θ＝180)
0.08
0.06
D.C.
6.0E-07
D=1/2
4.0E-07
Sin(θ＝180)
0.04
2.0E-07
0.02
0.0E+00
0
0
0.05
0.1
0.15
0
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.2
0A
Io
0V
VR
t
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
T
D=t/T
VR=20V
Tj=150°C
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A