March 2005 RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features General Description ■ ■ ■ ■ ■ ■ ■ ■ ■ The RMPA2456 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The onchip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. 31.5dB small signal gain 27dBm output power @ 1dB compression 100mA total current at 19dBm modulated power out 2.8% EVM at 19 dBm modulated power out 3.3V supply operation Power saving shutdown options (bias control) Integrated power detector with 20dB dynamic range Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11b/g applications Device Electrical Characteristics1 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Typ Max Units Frequency 2.4 2.5 GHz Collector Supply Voltage 3.0 3.3 3.6 V Mirror Supply Voltage 3.0 3.3 3.6 V Mirror Supply Current 3.3 mA Gain 31.5 dB Total Current @ 19dBm POUT 100 mA EVM @ 19dBm POUT2 2.8 % Detector Output @ 19dBm POUT 775 mV 5 dBm Detector Threshold3 Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3V, TA = 25°C, PA is constantly biased, 50Ω system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. ©2005 Fairchild Semiconductor Corporation RMPA2456 Rev. C 1 www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary (RF not framed) 11 Mbps Data Rate 22.0 MHz Bandwidth Parameter Min Typ Max Units 2.5 GHz Frequency 2.4 Collector Supply Voltage 3.0 3.3 3.6 V Mirror Supply Voltage 3.0 3.3 3.6 V Mirror Supply Current 3.3 mA Gain 32 dB Total Current @ 19dBm Pout 130 mA First Side Lobe Power @ 19dBm Pout -36 dBm Second Side Lobe Power @ 19dBm Pout -60 dBm Max Pout Spectral Mask Compliance2 24 dBm Detector Output @ 19dBm Pout Detector Pout Threshold3 1.15 V 5 dBm Electrical Characteristics1 Single Tone Parameter Min Frequency 2.4 Collector Supply Voltage 3.0 Mirror Supply Voltage (VM123) 3.0 Gain Typ Max Units 2.5 GHz 3.3 3.6 V 3.3 3.6 V 31.5 dB Total Quiescent Current 49 mA Bias Current at pin VM1234 3.2 mA P1dB Compression 27 dBm Current @ P1dB Compression 600 mA Shutdown Current (VM123 = 0V) <1.0 µA 12 dB 9 dB 2.4 V Input Return Loss Output Return Loss Detector Output at P1dB Compression Detector Pout Threshold3 5 V Turn-on Time5 <1.0 µS Spurious (Stability)6 -65 dBc Notes: 1. VC1, VC2, VC3 = 3.3V, VM123 = 3.3 Volts, Ta = 25°C, PA is constantly biased, 50Ω system. 2. PIN is adjusted to point where performance approaches spectral mask requirements. 3. POUT measured at PIN corresponding to power detection threshold. 4. Mirror bias current is included in the total quiescent current. 5. Measured from Device On signal turn on to the point where RF POUT stabilizes to 0.5dB. 6. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 2 RMPA2456 Rev. C www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Electrical Characteristics1 802.11b CCK Modulation Symbol Parameter Ratings Units VC1, VC2, VC3 Positive Supply Voltage 5 V IC1, IC2, IC3 Supply Current IC1 IC2 IC3 50 150 700 mA mA mA VM123 Positive Bias Voltage 4.0 V PIN RF Input Power +5 dBm TCASE Case Operating Temperature -40 to +85 °C TSTG Storage Temperature -55 to +150 °C Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. RF IN GND VDET GND 14 13 VOLTAGE DETECTOR 1 12 2 11 3 4 10 INPUT MATCH GND 5 OUTPUT MATCH 6 7 9 8 3 RMPA2456 Rev. C VC3 N/C GND RF OUT Pin Description 1 VM123 2 VC2 3 GND 4 RF IN 5 GND 6 VC1 7 GND 8 GND 9 RF OUT 10 GND 11 N/C 12 VC3 13 GND 14 VDET 15 GND 16 GND GND GND 15 GND VC2 16 VC1 VM123 GND Functional Block Diagram www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Absolute Ratings1 RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Performance Data 802.11g OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Total Measured EVM Vs. Modulated Power Out VC=3.3V VM=3.3V T=25°C Gain Vs. Modulated Power Out VC=3.3V VM=3.3V T=25°C 8 34 Note: Uncorrected EVM. Source EVM is approximately 0.8%. 7 32 5 Gain (dB) Total Measured MVE (%) 33 6 2.40 GHz 2.45 GHz 2.50 GHz 4 31 3 30 2.40 GHz 2.45 GHz 2.50 GHz 2 29 1 28 0 5 7 9 11 13 15 17 19 21 5 23 7 9 11 13 Modulated Power Out (dBm) 15 17 19 21 23 25 23 25 Modulated Power Out (dBm) Total Current Vs. Modulated Power Out VC=3.3V VM=3.3V T=25°C Detector Voltage Vs. Modulated Power Out VC=3.3V VM=3.3V T=25°C 250 1400 1200 Detector Voltage (mV) Total Current (mA) 200 150 2.40 GHz 2.45 GHz 2.50 GHz 100 1000 2.40 GHz 2.45 GHz 2.50 GHz 800 600 50 400 0 200 5 7 9 11 13 15 17 19 21 23 25 5 7 9 11 Modulated Power Out (dBm) 13 15 17 19 21 Modulated Power Out (dBm) Single Tone S-Parameters Vs. Frequency VC=3.3V VM=3.3V T=25°C Gain Vs. Single Tone Power Out VC=3.3V VM=3.3V T=25°C 0 35 34 33 S21 (dB) 30 -5 25 -10 2.40 GHz 2.45 GHz 2.50 GHz 30 29 S11 (dB) 20 S11, S22 (dB) 31 S21 (dB) Gain (dB) 32 -15 S22 (dB) 28 27 5 7 9 11 13 15 17 19 21 23 25 15 2.35 27 2.45 2.5 -20 2.55 Frequency (GHz) Single Tone Power Out (dBm) 4 RMPA2456 Rev. C 2.4 www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board Schematic 16 15 14 13 1 12 2 11 3 10 4 9 5 6 7 8 Backside Ground Package Outline Dimensions in mm Note: Dimensions do not include protrusions or mold flash. These are not to exceed 0.006" (.155mm) on any side. 5 RMPA2456 Rev. C www.fairchildsemi.com Qty Item No. 1 1 F100039 2 2 #142-0701-841 SMA Connector Johnson 7 3 #S1322-XX-ND RT Angle Sgl M Header Digikey Ref 4 1 5 (C3) 2 6 (C1, C2) 3 7 (C4, C5, C6) 2 Part Number Description PC Board Vendor Fairchild F1XXXXX Assembly, RMPA2456 Fairchild 06035A150J 15pF Capacitor AVX GRM39C0G330J50D500 33pF Capacitor Murata CC1206JX5R106M 10µF Capacitor TDK 8 (L2, L3) LLV1005FB5N6S 5.6nH Inductor Toko 1 9 (L1) LLV1005FH15NK 15nH Inductor Toko A/R 10 SN63 Solder Paste Indium Corp. A/R 11 SN96 Solder Paste Indium Corp. Evaluation Board Layout C5 C6 C2 L2 C1 L3 C3 L1 C4 Actual Board Size = 2.0" X 1.5" 6 RMPA2456 Rev. C www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board of Materia Recommended turn-on sequence: 1) Connect common ground terminal to the Ground (GND) pin on the board. 8) Apply input RF power to SMA connector pin RFIN. Currents in pins VC1, VC2 and VC3 will vary depending on the input drive level. 2) Connect voltmeter to pin DT1 (VDET, voltage detector). 9) Vary positive voltage on pin VM123 from +3.3 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins: 3) Apply positive supply voltage VC1 (=3.3 V) to pin VC1 (first stage collector). 4) Apply positive supply voltage VC2 (=3.3 V) to pin VC2 (second stage collector). Pin Current 5) Apply positive supply voltage VC3 (=3.3 V) to pin VC3 (third stage collector). VC1 <1 nA VC2 <1 nA 6) Apply positive bias voltage VM123 (=3.3 V) to pin VM123 (bias networks). VC3 <1 nA Recommended turn-off sequence: 7) At this point, you should expect to observe the following positive currents flowing into the pins: Use reverse order described in the turn-on sequence above. Pin Current Note: VM123 1.0 – 5.0 mA 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. VC1 1.0 – 9.0 mA VC2 3.0 – 23.0 mA VC3 15.0 – 35.0 mA 7 RMPA2456 Rev. C www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Evaluation Board Turn-On Sequence1 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 RMPA2456 Rev. C www.fairchildsemi.com RMPA2456 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier TRADEMARKS