FAIRCHILD RMPA0965

RMPA0965
CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module
General Description
Features
The RMPA0965 power amplifier module (PAM) is designed
for cellular band AMPS, CDMA and CDMA2000-1X
applications. The 2 stage PAM is internally matched to 50Ω
to minimize the use of external components and features a
low-power mode to reduce standby current and DC power
consumption during peak phone usage. High power-added
efficiency and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) process.
• Single positive-supply operation with low power and
shutdown modes
• 40% CDMA efficiency at +28 dBm average output power
• 52% AMPS mode efficiency at +31 dBm output power
• Compact LCC package ( 3.0 x 3.0 x 1.0 mm)
• Internally matched to 50Ω and DC blocked RF input/
output
• Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings1
Symbol
Vcc1, Vcc2
Vref
Vmode
Pin
TSTG
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Parameter
Value
5.0
2.6 to 3.5
3.5
+10
Units
V
V
V
dBm
Storage Temperature
-55 to +150
°C
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Functional Block Diagram
(Top View)
MMIC
8 Vcc2
Vcc1 1
RF IN 2
INPUT
MATCH
OUTPUT
MATCH
Vmode 3
DC BIAS CONTROL
Vref 4
7 RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2004 Fairchild Semiconductor Corporation
RMPA0965 Rev. C
RMPA0965
September 2004
Symbol
Parameter
f
Operating Frequency
CDMA Operation
SSg
Small-Signal Gain
Gp
Power Gain
Po
Linear Output Power
Min
824
Max
849
Units
MHz
31
30
29
PAE (digital) @ +28 dBm
PAE (digital) @ +16 dBm
PAEd (digital) @ +16 dBm
Itot
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
ACPR1 ±885 KHz Offset
ACPR2 ±1.98 MHz Offset
Comments
40
9
25
470
120
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
-50
-52
-60
-70
dBc
dBc
dBc
dBc
Po = 0 dBm
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4V
Po = +28 dBm, Vmode = 0V
Po = +16 dBm, Vmode = 2.0V
IS-95 A/B Modulation
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
30
52
dB
%
Po = +31 dBm
Po = +31 dBm
28
16
PAEd
AMPS Operation
Gp
Gain
PAEa Power-Added Efficiency (analog)
General Characteristics
VSWR Input Impedance
NF
Noise Figure
Rx No Receive Band Noise Power
2fo-5fo Harmonic Suppression
S
Spurious Outputs2
Ruggedness w/ Load Mismatch
Tc
Case Operating Temperature
DC Characteristics
Iccq
Quiescent Current
Iref
Reference Current
Icc(off) Shutdown Leakage Current
Typ
2.0:1
4
-137
2.5:1
-30
-60
10:1
85
-30
55
5
1
dB
dBm/Hz Po ≤ +28 dBm; 869 to 894 MHz
dBc
Po ≤ +28 dBm
dBc
Load VSWR ≤ 5.0:1
No permanent damage.
°C
mA
mA
µA
8
5
Vmode ≥ 2.0V
Po ≤ +28 dBm
No applied RF signal.
Notes:
1: All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.
2: All phase angles.
Recommend Operating Conditions
Symbol
f
Vcc1, Vcc2
Vref
Vmode
Pout
TC
Parameter
Operating Frequency
Supply Voltage
Reference Voltage
(Operating)
(Shutdown)
Bias Control Voltage
(low-power)
(high-power)
Linear Output Power
(high-power)
(low-power)
Case Operating Temperature
©2004 Fairchild Semiconductor Corporation
Min
824
3.0
Typ
2.7
0
1.8
0
-30
Max
849
4.2
Units
MHz
V
2.85
3.1
0.5
V
V
2.0
3.0
0.5
V
V
+28
+16
+85
dBm
dBm
°C
3.4
RMPA0965 Rev. C
RMPA0965
Electrical Characteristics1
RMPA0965 Gain vs. Frequency, IS95 Modulation
Pout = 28dBm, Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, TC = 25°C
RMPA0965 PAE vs. Frequency, IS95 Modulation
Pout = 28dBm, Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, TC = 25°C
32
42
31
GAIN (dB)
PAE (%)
41
40
39
30
29
38
37
28
824
836.5
FREQUENCY (MHz)
849
824
-47
-57
-48
-58
-49
-50
849
RMPA0965 ACPR2 vs. Frequency, IS95 Modulation
Pout = 28dBm, Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, TC = 25°C
ACPR2 (dBc)
ACPR1 (dBc)
RMPA0965 ACPR1 vs. Frequency, IS95 Modulation
Pout = 28dBm, Vcc = 3.4V, Vref = 2.85V, Vmode = 0V, TC = 25°C
836.5
FREQUENCY (MHz)
-59
-60
-61
-51
-62
-52
824
©2004 Fairchild Semiconductor Corporation
836.5
FREQUENCY (MHz)
849
824
836.5
FREQUENCY (MHz)
849
RMPA0965 Rev. C
RMPA0965
Typical Characteristics
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage:
• Cleanliness: Observe proper handling procedures to
ensure clean devices and PCBs. Devices should remain
in their original packaging until component placement to
ensure no contamination or damage to RF, DC & ground
contact areas.
• Device Cleaning: Standard board cleaning techniques
should not present device problems provided that the
boards are properly dried to remove solvents or water
residues.
• Static Sensitivity: Follow ESD precautions to protect
against ESD damage:
– A properly grounded static-dissipative surface on
which to place devices.
– Static-dissipative floor or mat.
– A properly grounded conductive wrist strap for each
person to wear while handling devices.
• General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of
bent tweezers. Avoiding damaging the RF, DC, & ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
• Device Storage: Devices are supplied in heat-sealed,
moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions.
Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
Device RF:
Fairchild RF recommends the following procedures prior to
assembly.
• Dry-bake devices at 125°C for 24 hours minimum. Note:
The shipping trays cannot withstand 125°C baking
temperature.
• Assemble the dry-baked devices within 7 days of
removal from the oven.
• During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
Solder Materials & Temperature Profile: Reflow
soldering is the preferred method of SMT attachment. Hand
soldering is not recommended.
• Reflow Profile
– Ramp-up: During this stage the solvents are
evaporated from the solder paste. Care should be
taken to prevent rapid oxidation (or paste slump) and
solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.
– Pre-heat/soak: The soak temperature stage serves
two purposes; the flux is activated and the board and
devices achieve a uniform temperature. The
recommended soak condition is: 120-150 seconds at
150°C.
– Reflow Zone: If the temperature is too high, then
devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to
excessive solder oxidation. Excessive time at
temperature can enhance the formation of intermetallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint.
Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature
should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with
a maximum limit of 225°C.
– Cooling Zone: Steep thermal gradients may give rise
to excessive thermal shock. However, rapid cooling
promotes a finer grain structure and a more crackresistant solder joint. The illustration below indicates
the recommended soldering profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable voidfree attachment of the heatsink to the PWB. The solder joint
should be 95% void-free and be a consistent thickness.
Rework Considerations:
Rework of a device attached to a board is limited to reflow
of the solder with a heat gun. The device should not be
subjected to more than 225°C and reflow solder in the
molten state for more than 5 seconds. No more than 2
rework operations should be performed.
• If the 7-day period or the environmental conditions have
been exceeded, then the dry-bake procedure must be
repeated.
©2004 Fairchild Semiconductor Corporation
RMPA0965 Rev. C
RMPA0965
Application Information
RMPA0965
240
10 SEC
220
200
183°C
180
160
140
DEG (°C)
120
100
1°C/SEC
SOAK AT 150°C
FOR 60 SEC
80
45 SEC (MAX)
ABOVE 183°C
1°C/SEC
60
40
20
0
0
60
120
180
240
300
TIME (SEC)
Figure 1. Recommended Solder Reflow Profile
©2004 Fairchild Semiconductor Corporation
RMPA0965 Rev. C
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13