March 2005 RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Features General Description ■ Full 4.9 to 5.9GHz operation The RMPA5252 power amplifier is designed for high performance WLAN applications in the 4.9–5.9 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. An on-chip detector provides power sensing capability. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. ■ 34dB small signal gain ■ 3% EVM at 18dBm modulated power out ■ 3.3V single positive supply operation ■ Integrated power detector with 20dB dynamic range ■ Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package ■ Internally matched to 50 Ohms and DC blocked RF input/ output ■ Optimized for use in 802.11a applications Device Electrical Characteristics1 802.11a OFDM Modulation (with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Min Frequency 4.9 Collector Supply Voltage 3.0 Typ 3.3 Max Units 5.9 GHz 3.6 V Mirror Supply Voltage 2.4 V Mirror Supply Current 28 mA Gain 34 dB Total Current @ 18dBm POUT 275 mA EVM @ 18dBm POUT2 3.0 % Detector Output @ 18dBm POUT 500 mV 5 dBm Detector Threshold3 Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25°C, PA is constantly biased, 50¾ system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. POUT measured at PIN corresponding to power detection threshold. ©2005 Fairchild Semiconductor Corporation RMPA5252 Rev. C 1 www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Preliminary Parameter Min Typ Max Units Frequency 4.9 5.9 GHz Supply Voltage (VCC) 3.0 3.3 3.6 V Mirror Supply Voltage (VM) 2.1 2.4 2.6 V Gain 34 Total Quiescent Current 180 mA Bias Current at pin VM (total) 2 28 mA P1dB Compression 26 dBm Current @ P1dB Compression 500 mA Shutdown Current (VM12, VM34 = 0V) <1.0 µA 10 dB Output Return Loss 12 dB Detector Output at P1dB Compression 1.1 V Input Return Loss Detector Pout Threshold 4 Turn-On Time3 dB 5 V <1.0 µS Notes: 1. VCC = 3.3V, VM12, VM34 = 2.4V, TA = 25°C, PA is constantly biased, 50¾ system. 2. Power Control bias current is included in the total quiescent current. 3. Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 4. POUT measured at PIN corresponding to power detection threshold. Absolute Ratings1 Symbol VCC Parameter Ratings Units 5 V 1000 mA 4 V Positive Supply Voltage ICC Supply Current PC Positive Bias Voltage PIN RF Input Power +5 dBm TCASE Case Operating Temperature -40 to +85 °C TSTG Storage Temperature -55 to +150 °C Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. N/C VC3 N/C VC4 Functional Block Diagram 16 15 14 13 GND 1 RF IN 2 12 GND Input Match Output Match Voltage Detector GND 3 VC1 4 N/C 8 VM34 VC2 2 RMPA5252 Rev. C 7 VM12 6 10 GND 9 Bias Control 5 11 RF OUT DT1 www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Electrical Characteristics1 Single Tone RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Performance Data 802.11a OFDM Modulation (176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Gain Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C Total Measured EVM Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 36 8 7 35 34 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 5 4 Gain (dB) Total Measured EVM (%) 6 33 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 3 32 2 31 1 Note: Uncorrected EVM. Source EVM is approximately 0.8%. 30 0 5 10 15 20 5 25 10 15 25 30 Detector Voltage Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 500 900 450 800 400 700 Detector Voltage (mV) Total Current (mA) Total Current Vs. Modulated Power Out VCC=3.3V VM12, VM34=2.4V T=25C 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 350 20 Modulated Power Out (dBm) Modulated Power Out (dBm) 4.9 5.1 5.3 5.5 5.7 5.9 600 300 500 250 400 GHz GHz GHz GHz GHz GHz 300 200 5 10 15 20 25 5 30 10 15 Single Tone 20 25 30 Modulated Power Out (dBm) Modulated Power Out (dBm) Gain Vs. Single Tone Power Out VCC=3.3V VM12, VM34=2.4V T=25C RMPA5252 S-Parameters Vs. Frequency VCC=3.3V VM12,VM34=2.4V T=25C 36 10 40 S21 (dB) 35 5 30 0 25 -5 20 -10 15 -15 34 S21 (dB) Gain (dB) 4.9 GHz 5.1 GHz 5.3 GHz 5.5 GHz 5.7 GHz 5.9 GHz 30 -20 10 28 S11 (dB) 5 26 -25 S22 (dB) -30 0 5 10 15 20 25 30 4.5 5 5.5 6 6.5 Frequency (GHz) Single Tone Power Out (dBm) 3 RMPA5252 Rev. C S11, S22 (dB) 32 www.fairchildsemi.com Pin 16 15 14 12 2 11 3 10 4 9 6 7 1 GND 2 RF IN 3 GND 4 VC1 5 VC2 6 N/C 7 VM12 8 VM34 13 1 5 Description 9 DT1 10 GND 11 RF OUT 12 GND 13 VC4 14 N/C 15 VC3 16 N/C 17 CENTER GND 8 Package Outline Dimensions in mm 4 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Schematic Qty Item No. 1 1 F100064 Part Number PC Board Description Vendor 2 2 #142-0701-841 SMA Connector Johnson 10 3 #S1322-XX-ND RT Angle Sgl M Header Digikey Fairchild Ref 4 Assembly, RMPA5252 Fairchild 4 5 (C1, C2, C3, C4) 250R07C150JV4 15pF Capacitor Johanson 4 6 (C5, C6, C7, C8) GRM36X7R103K25 10,000pF Capacitor Murata 1 7 (C9) GRM21BR60J106KE01L 10µF Capacitor Murata 2 8 (L1, L3) LL1005-FHL1N2S 1.2nH Inductor Toko 2 9 (L2, L4) LL1005-FHL2N2S 2.2nH Inductor Toko A/R 10 SN63 Solder Paste Indium Corp. A/R 11 SN96 Solder Paste Indium Corp. Evaluation Board Layout Z XYTT 5252 Actual Board Size = 2.0" X 1.5" 5 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Evaluation Board Bill of Materials Recommended turn-on sequence: 1) Connect common ground terminal to the Ground (GND) pin on the board. 6) Apply input RF power to SMA connector pin RFIN. Current for pin VCC will vary depending on the input drive level. 2) Connect voltmeter to DT1 pin (Detector Voltage). 7) Vary positive voltage VM12, VM34 from +2.4 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins: 3) Connect VC1, VC2, VC3, VC4 (Collector voltages) together using jumper cables. Apply a single positive supply voltage (3.3V) to pin VC4. 4) Connect VM12 and VM34 (Power Control voltage) together using a jumper cable. Apply a single positive supply voltage (2.4V) to pin VM12. Current VCC (total) 180 mA VM12 and VM34 28 mA <1 nA Use reverse order described in the turn-on sequence above. Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design 6 RMPA5252 Rev. C Current VCC (total) Recommended turn-off sequence: 5) At this point, you should expect to observe the following positive currents flowing into the pins:: Pin Pin www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier Evaluation Board Turn-On Sequence1 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 7 RMPA5252 Rev. C www.fairchildsemi.com RMPA5252 4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier TRADEMARKS