FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. Standard Buck Converter Features This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance. 4 A, 20 V RDS(ON) = 100mΩ @ VGS = 4.5 V RDS(ON) = 150mΩ @ VGS = 2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S/C C A TOP G D S/C A 1 6 A S/C 2 5 S/C G 3 4 D D BOTTOM MLP 3x3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Ratings 20 Units V ±12 V 4 A 10 VRRM Schottky Repetitive Peak Reverse voltage IO Schottky Average Forward Current PD Power dissipation (Steady State) Power dissipation (Steady State) TJ, TSTG Operating and Storage Junction Temperature Range 20 V (Note 1a) 2 A (Note 1a) (Note 1b) 1.7 W 0.8 o -55 to +150 C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Ambient (Note 1b) o 70 C/W oC/W 150 Package Marking and Ordering Information Device Marking 2N111 Device FDFM2N111 ©2005 Fairchild Semiconductor Corporation Reel Size 7inch 1 Tape Width 12mm Quantity 3000 units FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode August 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 20 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - 12 - mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 16V - - 1 µA IGSS Gate-Body Leakage, VGS = ±12V, VDS = 0V - - ±100 nA On Characteristics (Note 2) VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 0.6 1.0 1.5 V ∆VGS(TH) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - -3 - mV/°C ID = 4.0A, VGS = 4.5V - 54 100 ID = 3.3A, VGS = 2.5V - 83 150 ID = 4.0A, VGS = 4.5V, TJ = 125°C - 74 147 10 - - A - 9.7 - S - 273 - pF - 63 - pF - 37 - pF - 1.6 - Ω - 6 12 ns - 7 14 ns - 11 20 ns RDS(ON) Static Drain-Source On-Resistance ID(ON) On-State Drain Current VGS = 2.5V, VDS = 5V gFS Forward Transconductance ID = 4A, VDS = 5V mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz VGS = 0V, f = 1MHz, Switching Characteristics (Note 2) td(ON) Turn-On Delay Time tr Turn-On Rise Time td(OFF) Turn-Off Delay Time tf Turn-Off Fall Time - 1.7 3.4 ns Qg Total Gate Charge - 2.7 3.8 nC Qgs Gate-Source Charge - 0.6 - nC Qgd Gate-Drain Charge - 0.9 - nC A VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω VDS = 10V, ID = 4.0A, VGS = 4.5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 1.4 VSD Drain-Source Diode Forward Voltage - 0.8 -1.2 V trr Diode Reverse Recovery Time - 11 - ns Qrr Diode Reverse Recovery Charge - 3 - nC VGS = 0V, IS = 1.4 A (Note 2) IF= 4.0A, dIF/dt=100A/µs Schottky Diode Characteristic VR Reverse Voltage IR = 1mA IR Reverse Leakage VR = 5V VF Forward Voltage IF = 1A 2 20 TJ = 25°C TJ = 100°C TJ = 25°C - - - - 0.32 - V 100 µA 10 mA 0.39 V FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθCA is guaranteed by design while RθCA is determined by the user's board design. a) 70oC/W when mounted on a 1in2 pad of 2 oz copper b) 150oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TA = 25°C unless otherwise noted 2 VGS = 4.5V 3.0V 3.5V 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 10 2.5V 6 4 2.0V 2 1.8 VGS = 2.5V 1.6 1.4 3.0V 1.2 3.5V 0 0.5 1 1.5 2 0 2.5 2 4 6 8 10 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.2 1.6 ID = 4A VGS = 4.5V ID = 2A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 -50 0.18 0.16 0.14 TA = 125oC 0.12 0.1 0.08 TA = 25oC 0.06 0.04 -25 0 25 50 75 100 125 150 1.5 2 2.5 TJ, JUNCTION TEMPERATURE (oC) 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage Figure 3. On-Resistance Variation with Temperature 10 TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 100 VDS = 5V ID, DRAIN CURRENT (A) 4.0V 1 25oC 8 125oC 6 4 2 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 0.2 3 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics 4 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics 400 ID = 4A VDS = 5V 10V 5 4 3 2 1 Ciss 300 250 200 150 Coss 100 50 Crss 0 0 0 1 2 3 0 4 4 12 16 20 Figure 8. Capacitance Characteristics Figure 7. Gate Charge Characteristics IR, REVERSE LEAKAGE CURRENT (A) 10 TJ = 125oC 1 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IF, FORWARD LEAKAGE CURRENT (A) f = 1MHz VGS = 0 V 350 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 6 o TJ = 25 C 0.1 0.01 0.1 o TJ = 125 C 0.01 o 0.001 TJ = 100 C 0.0001 o TJ = 25 C 0.00001 0.000001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 5 10 15 20 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 10. Schottky Diode Reverse Current Figure 9. Schottky Diode Forward Voltage Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDFM2N111 Rev. C2(W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode FDFM2N111 Rev. C2 (W) 6 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 7 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS