MCP6071/2/4 110 µA, High Precision Op Amps Description Features • • • • • • • • Low Offset Voltage: ±150 µV (maximum) Low Quiescent Current: 110 µA (typical) Rail-to-Rail Input and Output Wide Supply Voltage Range: 1.8V to 6.0V Gain Bandwidth Product: 1.2 MHz (typical) Unity Gain Stable Extended Temperature Range: -40°C to +125°C No Phase Reversal Applications • • • • • • • The Microchip Technology Inc. MCP6071/2/4 family of operational amplifiers (op amps) has low input offset voltage (±150 µV, maximum) and rail-to-rail input and output operation. This family is unity gain stable and has a gain bandwidth product of 1.2 MHz (typical). These devices operate with a single supply voltage as low as 1.8V, while drawing low quiescent current per amplifier (110 µA, typical). These features make the family of op amps well suited for single-supply, high precision, battery-powered applications. The MCP6071/2/4 family is offered in single (MCP6071), dual (MCP6072), and quad (MCP6074) configurations. Automotive Portable Instrumentation Sensor Conditioning Battery Powered Systems Medical Instrumentation Test Equipment Analog Filters The MCP6071/2/4 is designed with Microchip’s advanced CMOS process. All devices are available in the extended temperature range, with a power supply range of 1.8V to 6.0V. Package Types • • • • • MCP6072 SOIC MCP6071 SOIC Design Aids SPICE Macro Models FilterLab® Software MAPS (Microchip Advanced Part Selector) Analog Demonstration and Evaluation Boards Application Notes Typical Application 7 VDD VINA– 2 7 VOUTB 6 VOUT 5 NC VINA+ 3 6 VINB– 5 VINB+ VIN– 2 VIN+ 3 VSS 4 VIN+ 3 MCP6071 C Gyrator EP 9 MCP6072 2x3 TDFN 8 NC VOUTA 1 7 VDD VINA– 2 6 VOUT VINA+ 3 VSS 4 5 NC MCP6071 SOT-23-5 VOUT 1 VSS 2 R L = R L RC VOUT VSS 4 MCP6071 2x3 TDFN VIN– 2 Z IN = RL + jωL 8 VDD 8 NC NC 1 RL ZIN VOUTA 1 NC 1 VIN+ 3 VSS 4 8 VDD EP 9 7 VOUTB 6 VINB– 5 VINB+ MCP6074 SOIC, TSSOP 5 VDD VOUTA 1 4 VIN– VINA+ 3 VINA– 2 14 VOUTD 13 VIND– VDD 4 12 VIND+ 11 VSS VINB+ 5 10 VINC+ VINB– 6 9 VINC– VOUTB 7 8 VOUTC * Includes Exposed Thermal Pad (EP); see Table 3-1. © 2010 Microchip Technology Inc. DS22142B-page 1 MCP6071/2/4 NOTES: DS22142B-page 2 © 2010 Microchip Technology Inc. MCP6071/2/4 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † Current at Output and Supply Pins ............................±30 mA † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Storage Temperature ....................................-65°C to +150°C †† See 4.1.2 “Input Voltage Limits” VDD – VSS ........................................................................7.0V Current at Input Pins .....................................................±2 mA Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V Difference Input Voltage ...................................... |VDD – VSS| Output Short-Circuit Current .................................continuous Maximum Junction Temperature (TJ) .......................... +150°C ESD protection on all pins (HBM; MM) ................ ≥ 4 kV; 400V 1.2 Specifications TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +6.0V, VSS= GND, TA= +25°C, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2 and RL = 10 kΩ to VL. (Refer to Figure 1-1). Parameters Sym Min Typ Max Units Conditions VOS -150 — +150 µV ΔVOS/ΔTA — ±1.5 — µV/°C TA= -40°C to +85°C, VDD = 3.0V, VCM = VDD/3 ΔVOS/ΔTA — ±4.0 — µV/°C TA= +85°C to +125°C, VDD = 3.0V, VCM = VDD/3 PSRR 70 87 — dB pA Input Offset Input Offset Voltage Input Offset Drift with Temperature Power Supply Rejection Ratio VDD = 3.0V, VCM = VDD/3 VCM = VSS Input Bias Current and Impedance Input Bias Current Input Offset Current IB — ±1.0 100 IB — 60 — pA TA = +85°C IB — 1100 5000 pA TA = +125°C IOS — ±1.0 — pA 13 Common Mode Input Impedance ZCM — 10 ||6 — Ω||pF Differential Input Impedance ZDIFF — 1013||6 — Ω||pF VCMR VSS−0.15 — VDD+0.15 V VDD = 1.8V (Note 1) VCMR VSS−0.3 — VDD+0.3 V VDD = 6.0V (Note 1) CMRR 72 89 — dB VCM = -0.15V to 1.95V, VDD = 1.8V 74 91 — dB VCM = -0.3V to 6.3V, VDD = 6.0V 72 87 — dB VCM = 3.0V to 6.3V, VDD = 6.0V 74 89 — dB VCM = -0.3V to 3.0V, VDD = 6.0V Common Mode Common Mode Input Voltage Range Common Mode Rejection Ratio Note 1: Figure 2-13 shows how VCMR changed across temperature. © 2010 Microchip Technology Inc. DS22142B-page 3 MCP6071/2/4 TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +6.0V, VSS= GND, TA= +25°C, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2 and RL = 10 kΩ to VL. (Refer to Figure 1-1). Parameters Sym Min Typ Max Units Conditions AOL 95 115 — dB 0.2V < VOUT <(VDD-0.2V) VCM = VSS VOL, VOH VSS+15 — VDD–15 mV 0.5V input overdrive Open-Loop Gain DC Open-Loop Gain (Large Signal) Output Maximum Output Voltage Swing Output Short-Circuit Current — ±7 — mA VDD = 1.8V — ±28 — mA VDD = 6.0V VDD 1.8 — 6.0 V IQ 50 110 170 µA ISC Power Supply Supply Voltage Quiescent Current per Amplifier Note 1: IO = 0, VDD = 6.0V VCM = 0.9VDD Figure 2-13 shows how VCMR changed across temperature. TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. (Refer to Figure 1-1). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 1.2 — MHz Phase Margin PM — 57 — ° Slew Rate SR — 0.5 — V/µs Input Noise Voltage Eni — 4.3 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 19 — nV/√Hz f = 10 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz G = +1 V/V Noise TABLE 1-3: TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +6.0V and VSS = GND. Parameters Sym Min Typ Max Units Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 5L-SOT-23 θJA — 220.7 — °C/W Thermal Resistance, 8L-2x3 TDFN θJA — 52.5 — °C/W Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W Thermal Resistance, 14L-SOIC θJA — 95.3 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W Conditions Temperature Ranges Note 1 Thermal Package Resistances Note 1: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C. DS22142B-page 4 © 2010 Microchip Technology Inc. MCP6071/2/4 1.3 Test Circuits The circuit used for most DC and AC tests is shown in Figure 1-1. This circuit can independently set VCM and VOUT; see Equation 1-1. Note that VCM is not the circuit’s common mode voltage ((VP + VM)/2), and that VOST includes VOS plus the effects (on the input offset error, VOST) of temperature, CMRR, PSRR and AOL. CF 6.8 pF RG 100 kΩ RF 100 kΩ VP EQUATION 1-1: VDD VIN+ G DM = R F ⁄ R G V CM = ( VP + VDD ⁄ 2 ) ⁄ 2 CB1 100 nF MCP607X V OST = V IN– – V IN+ V OUT = ( V DD ⁄ 2 ) + ( V P – V M ) + V OST ( 1 + G DM ) Where: GDM = Differential Mode Gain (V/V) VCM = Op Amp’s Common Mode Input Voltage (V) VOST = Op Amp’s Total Input Offset Voltage (mV) VDD/2 CB2 1 µF VIN– VM RG 100 kΩ RL 10 kΩ RF 100 kΩ CF 6.8 pF VOUT CL 60 pF VL FIGURE 1-1: AC and DC Test Circuit for Most Specifications. © 2010 Microchip Technology Inc. DS22142B-page 5 MCP6071/2/4 NOTES: DS22142B-page 6 © 2010 Microchip Technology Inc. MCP6071/2/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Input Offset Drift with Temperature (µV/°C) Input Offset Drift with Temperature (µV/°C) FIGURE 2-3: Input Offset Voltage Drift with VDD = 3.0V and TA ≥ +85°C. © 2010 Microchip Technology Inc. 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 3.4 3.1 2.8 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 TA = -40°C TA = +25°C TA = +85°C TA = +125°C 0.9 20 16 12 8 4 0 -4 -8 -12 -16 -20 0% Representative Part 0.7 6% 3% VDD = 1.8V 0.5 12% 9% 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 0.3 18% 15% FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 3.0V. -0.5 1244 Samples VDD = 3.0V VCM = VDD/3 TA = +85°C to +125°C 24% 21% 1.5 Common Mode Input Voltage (V) Input Offset Voltage (µV) 27% 2.2 -0.5 20 16 12 8 4 0 -4 -8 -12 -16 -20 0% 1.9 3% 1.6 6% TA = -40°C TA = +25°C TA = +85°C TA = +125°C 1.3 9% Representative Part 1.0 12% VDD = 3.0V 0.7 15% 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 0.1 18% Input Offset Voltage (µV) 21% 1244 Samples VDD = 3.0V VCM = VDD/3 TA = -40°C to +85°C 1.0 FIGURE 2-4: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 6.0V. 27% 24% Common Mode Input Voltage (V) 0.4 Input Offset Voltage with FIGURE 2-2: Input Offset Voltage Drift with VDD = 3.0V and TA ≤ +85°C. Percentage of Occurences -0.5 150 120 90 60 30 0 -30 Input Offset Voltage (µV) FIGURE 2-1: VDD = 3.0V. Percentage of Occurences -60 -90 -120 0% 0.5 2% Representative Part TA = -40°C TA = +25°C TA = +85°C TA = +125°C 0.1 4% 0.0 6% VDD = 6.0V -0.2 8% 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 -0.1 10% 1244 Samples VDD = 3.0V VCM = VDD /3 -0.3 12% Input Offset Voltage (µV) 14% -150 Percentage of Occurences Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. Common Mode Input Voltage (V) FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 1.8V. DS22142B-page 7 MCP6071/2/4 5 Output Voltage (V) TA = -40°C TA = +25°C TA = +85°C TA = +125°C PSRR- 100 CMRR, PSRR (dB) Representative Part 6.5 Representative Part 90 CMRR 80 70 PSRR+ 60 50 40 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 30 FIGURE 2-8: Input Offset Voltage vs. Power Supply Voltage. 20 10 10 PSRR, CMRR (dB) 100 0.1 1.E-1 1 1.E+0 FIGURE 2-9: vs. Frequency. DS22142B-page 8 10 1.E+1 100 1.E+2 1k 1.E+3 10k 1.E+4100k 1.E+5 Frequency (Hz) Input Noise Voltage Density 100 100 FIGURE 2-11: Frequency. 1,000 Input Noise Voltage Density (nV/ √Hz) 6.0 FIGURE 2-10: Input Noise Voltage Density vs. Common Mode Input Voltage. Input Offset Voltage vs. Power Supply Voltage (V) 10 5.5 Common Mode Input Voltage (V) 110 1000 800 600 400 200 0 -200 -400 -600 -800 -1000 1.5 Input Offset Voltage (µV) FIGURE 2-7: Output Voltage. 5.0 0 4.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -350 10 4.0 VDD = 1.8V 3.5 -250 15 3.0 VDD = 3.0V -150 20 2.5 -50 25 2.0 VDD = 6.0V 1.5 50 30 1.0 150 f = 10 kHz VDD = 6.0V 35 -0.5 250 40 0.5 Representative Part 0.0 350 Input Noise Voltage Density (nV/√Hz) Input Offset Voltage (µV) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. 110 105 100 95 90 85 80 75 70 65 60 1k 10k 1000 10000 Frequency (Hz) 100k 100000 1M 1000000 CMRR, PSRR vs. CMRR (VDD = 6.0V, VCM = -0.3V to 6.3V) PSRR (VDD = 1.8V to 6.0V, VCM = VSS ) -50 -25 FIGURE 2-12: Temperature. 0 25 50 75 Ambient Temperature (°C) 100 125 CMRR, PSRR vs. Ambient © 2010 Microchip Technology Inc. MCP6071/2/4 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 150 140 Quiescent Current (µA/Amplifier) VCMR_H - VDD @ VDD = 6.0V @ VDD = 3.0V @ VDD = 1.8V VCMR_L - VSS @ VDD = 1.8V VOL - VSS @ VDD = 3.0V VOL - VSS @ VDD = 6.0V 120 110 100 90 80 60 -50 125 120 100 80 60 40 120 100 TA = +85°C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Common Mode Input Votlage (V) FIGURE 2-15: Input Bias Current vs. Common Mode Input Voltage. © 2010 Microchip Technology Inc. Open-Loop Gain (dB) VDD = 6.0V TA = +125°C 7.0 6.5 FIGURE 2-17: Quiescent Current vs. Power Supply Voltage with VCM = 0.9VDD. 10000 1000 6.0 4.5 4.0 3.5 Power Supply Voltage (V) 0 Open-Loop Gain 100 80 -30 Open-Loop Phase -60 60 -90 40 -120 20 0 -150 VDD = 6.0V -180 -20 Open-Loop Phase (°) FIGURE 2-14: Input Bias, Offset Currents vs. Ambient Temperature. 3.0 125 2.5 0.0 45 65 85 105 Ambient Temperature (°C) 2.0 20 0 Input Offset Current 1 25 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 5.5 10 125 VDD = 6.0V VCM = 0.9VDD 5.0 Input Bias Current 100 180 160 140 Quiescent Current (µA/Amplifier) Input Bias and Offset Currents (pA) 1000 0 25 50 75 100 Ambient Temperature (°C) FIGURE 2-16: Quiescent Current vs Ambient Temperature with VCM = 0.9VDD. 10000 VDD = 6.0V VCM = VDD -25 1.5 0 25 50 75 100 Ambient Temperature (°C) 1.0 -25 FIGURE 2-13: Common Mode Input Voltage Range Limit vs. Ambient Temperature. Input Bias Current (pA) VDD = 1.8V VCM = 0.9VDD 70 -50 10 VDD = 6.0V VCM = 0.9VDD 130 0.5 Common Mode Input Voltage Range Limit (V) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. -210 1.E-01 1.E+02 1.E+03 1.E+04 100k 1.E+05 1.E+06 0.1 1.E+00 1 1.E+01 10 100 1k 10k 1M 1.E+07 10M Frequency Frequency (Hz) (Hz) FIGURE 2-18: Frequency. Open-Loop Gain, Phase vs. DS22142B-page 9 MCP6071/2/4 RL = 10 kΩ VSS + 0.2V < VOUT < VDD - 0.2V 5.5 DC-Open-Loop Gain (dB) 0.6 0.4 0.2 6.0 VDD = 6.0V Phase Margin 0 FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage. 1.8 VDD = 6.0V VDD = 1.8V Large Signal AOL 0.05 0.10 0.15 0.20 0.25 180 1.6 Gain Bandwidth Product 140 1.2 120 1.0 100 0.8 80 0.6 60 0.4 VDD = 6.0V Phase Margin 0.2 -50 -25 0 25 50 75 100 Ambient Temperature (°C) 120 110 100 Input Referred 80 100 1k 10k 100k 1M 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 Frequency (Hz) FIGURE 2-21: Channel-to-Channel Separation vs. Frequency ( MCP6072/4 only). 0 125 FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. Gain Bandwidth Product (MHz) 130 40 20 1.8 140 160 1.4 0.0 150 DS22142B-page 10 60 40 20 Common Mode Input Voltage (V) FIGURE 2-20: DC Open-Loop Gain vs. Output Voltage Headroom. Channel to Channel Separation (dB) 100 80 Phase Margin (°) 2.5 3.0 3.5 4.0 4.5 5.0 Power Supply Voltage (V) Output Voltage Headroom V DD - VOH or VOL - VSS (V) 90 1.0 0.8 0.0 FIGURE 2-19: DC Open-Loop Gain vs. Power Supply Voltage. 150 145 140 135 130 125 120 115 110 105 100 0.00 Gain Bandwidth Product 180 1.6 160 Gain Bandwidth Product 1.4 140 1.2 120 1.0 100 0.8 80 0.6 60 0.4 VDD = 1.8V 0.2 Phase Margin 0.0 -50 -25 0 25 50 75 100 Ambient Temperature (°C) 40 Phase Margin (°) 2.0 180 160 140 120 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 1.5 1.8 1.6 1.4 1.2 Phase Margin (°) Gain Bandwidth Product (MHz) 150 145 140 135 130 125 120 115 110 105 100 Gain Bandwidth Product (MHz) DC-Open-Loop Gain (dB) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. 20 0 125 FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. © 2010 Microchip Technology Inc. MCP6071/2/4 16.0 35 Output Voltage Headroom VDD - VOH or VOL - VSS (mV) 40 TA = -40°C TA = +25°C TA = +85°C TA = +125°C 30 25 20 15 10 5 14.0 10.0 8.0 6.0 2.0 0.0 -50 VDD = 6.0V VDD = 1.8V 1 0.1 1k 1000 10k 10000 100k 100000 1M 1000000 (VDD - VOH)/IOUT VDD = 1.8V (VOL - VSS )/(-IOUT) (VDD - VOH )/IOUT (VOL - VSS )/(-IOUT) VDD = 6.0V 0.1 1 Output Current (mA) © 2010 Microchip Technology Inc. 125 Rising Edge, VDD = 6.0V Rising Edge, VDD = 1.8V -25 FIGURE 2-29: Temperature. 10 FIGURE 2-27: Ratio of Output Voltage Headroom to Output Current vs. Output Current. 0 25 50 75 100 Ambient Temperature (°C) Falling Edge, VDD = 6.0V Falling Edge, VDD = 1.8V Output Voltage (50 mV/div) Ratio of Output Headroom to Current (mV/mA) 60 55 50 45 40 35 30 25 20 15 10 5 0 Output Voltage Swing vs. 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 Frequency (Hz) FIGURE 2-26: Frequency. -25 FIGURE 2-28: Output Voltage Headroom vs. Ambient Temperature. Slew Rate (V/µs) Output Voltage Swing (V P-P) 10 VOL - VSS 4.0 Power Supply Voltage (V) FIGURE 2-25: Ouput Short Circuit Current vs. Power Supply Voltage. VDD - VOH 12.0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.0 Output Short Circuit Current (mA) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. 0 25 50 75 Ambient Temperature (°C) 100 125 Slew Rate vs. Ambient VDD = 6.0V G = +1 V/V Time (2 µs/div) FIGURE 2-30: Pulse Response. Small Signal Non-Inverting DS22142B-page 11 MCP6071/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. VDD = 6.0V G = -1 V/V 6.0 VIN 4.0 3.0 2.0 1.0 VDD = 6.0V G = +2 V/V 0.0 -1.0 Time (2 µs/div) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Small Signal Inverting Pulse Time (0.1 ms/div) FIGURE 2-34: The MCP6071/2/4 Shows No Phase Reversal. 1000 VDD = 6.0V G = +1 V/V Closed Loop Output Impedance (Ω) FIGURE 2-31: Response. Output Voltage (V) VOUT 5.0 Output Voltage (V) Output Voltage (50 mV/div) 7.0 100 1 10 10 Time (0.02 ms/div) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Large Signal Non-Inverting DS22142B-page 12 1000 1k 10000 10k Frequency (Hz) 100000 100k 1000000 1M 1.E-03 1m 1.E-04 100 µ VDD = 6.0V G = -1 V/V 1.E-05 10µ 1.E-06 1µ 1.E-07 100n 1.E-08 10n 1.E-09 1n 1.E-10 100p TA = -40°C TA = +25°C TA = +85°C TA = +125°C 1.E-11 10p 1.E-12 1p Time (0.02 ms/div) FIGURE 2-33: Response. 100 100 FIGURE 2-35: Closed Loop Output Impedance vs. Frequency. -IIN (A) Output Voltage (V) FIGURE 2-32: Pulse Response. GN: 101 V/V 11 V/V 1 V/V 10 Large Signal Inverting Pulse -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 VIN (V) FIGURE 2-36: Measured Input Current vs. Input Voltage (below VSS). © 2010 Microchip Technology Inc. MCP6071/2/4 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP6071 SOIC MCP6072 SOT-23-5 2x3 TDFN SOIC 2x3 TDFN MCP6074 SOIC, TSSOP Symbol Description 6 1 6 1 1 1 VOUT, VOUTA Analog Output (op amp A) 2 4 2 2 2 2 VIN–, VINA– Inverting Input (op amp A) 3 3 3 3 3 3 VIN+, VINA+ Non-inverting Input (op amp A) 7 5 7 8 8 4 VDD — — — 5 5 5 VINB+ Non-inverting Input (op amp B) — — — 6 6 6 VINB– Inverting Input (op amp B) — — — 7 7 7 VOUTB Analog Output (op amp B) — — — — — 8 VOUTC Analog Output (op amp C) — — — — — 9 VINC– Inverting Input (op amp C) — — — — — 10 VINC+ Non-inverting Input (op amp C) Positive Power Supply Negative Power Supply 4 2 4 4 4 11 VSS — — — — — 12 VIND+ Non-inverting Input (op amp D) — — — — — 13 VIND– Inverting Input (op amp D) — — — — — 14 VOUTD Analog Output (op amp D) 1, 5, 8 — 1, 5, 8 — — — NC No Internal Connection — — 9 — 9 — EP Exposed Thermal Pad (EP); must be connected to VSS. 3.1 Analog Outputs The output pins are low-impedance voltage sources. 3.2 Analog Inputs The non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents. 3.3 Power Supply Pins The positive power supply (VDD) is 1.8V to 6.0V higher than the negative power supply (VSS). For normal operation, the other pins are at voltages between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need bypass capacitors. 3.4 Exposed Thermal Pad (EP) There is an internal electrical connection between the Exposed Thermal Pad (EP) and the VSS pin; they must be connected to the same potential on the Printed Circuit Board (PCB). © 2010 Microchip Technology Inc. DS22142B-page 13 MCP6071/2/4 NOTES: DS22142B-page 14 © 2010 Microchip Technology Inc. MCP6071/2/4 4.0 APPLICATION INFORMATION The MCP6071/2/4 family of op amps is manufactured using Microchip’s state-of-the-art CMOS process and is specifically designed for low-power, high precision applications. 4.1 VDD D1 U1 D2 V1 MCP607X Rail-to-Rail Input VOUT V2 4.1.1 PHASE REVERSAL The MCP6071/2/4 op amps are designed to prevent phase reversal when the input pins exceed the supply voltages. Figure 2-34 shows the input voltage exceeding the supply voltage without any phase reversal. 4.1.2 INPUT VOLTAGE LIMITS In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the voltages at the input pins (see Section 1.1, Absolute Maximum Ratings †). The ESD protection on the inputs can be depicted as shown in Figure 4-1. This structure was chosen to protect the input transistors and to minimize input bias current (IB). FIGURE 4-2: Inputs. Protecting the Analog A significant amount of current can flow out of the inputs when the Common Mode voltage (VCM) is below ground (VSS). See Figure 2-36. 4.1.3 INPUT CURRENT LIMITS In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the voltages at the input pins (see Section 1.1, Absolute Maximum Ratings †). Figure 4-3 shows one approach to protecting these inputs. The resistors R1 and R2 limit the possible currents in or out of the input pins (and the ESD diodes, D1 and D2). The diode currents will go through either VDD or VSS. VDD Bond Pad VIN+ Bond Pad VDD Input Stage Bond V – IN Pad D1 D2 U1 V1 R1 MCP607X VOUT V2 Bond VSS Pad FIGURE 4-1: Structures. R2 VSS – min (V1,V2) 2 mA max(V1,V2) – VDD min(R1,R2) > 2 mA min(R1,R2) > Simplified Analog Input ESD The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go well above VDD; their breakdown voltage is high enough to allow normal operation, but not low enough to protect against slow over-voltage (beyond VDD) events. Very fast ESD events (that meet the spec) are limited so that damage does not occur. In some applications, it may be necessary to prevent excessive voltages from reaching the op amp inputs. Figure 4-2 shows one approach to protecting these inputs. FIGURE 4-3: Inputs. 4.1.4 Protecting the Analog NORMAL OPERATION The input stage of the MCP6071/2/4 op amps use two differential input stages in parallel. One operates at a low common mode input voltage (VCM), while the other operates at a high VCM. With this topology, the device operates with a VCM up to 300 mV above VDD and 300 mV below VSS. (See Figure 2-13). The input offset voltage is measured at VCM = VSS – 0.3V and VDD + 0.3V to ensure proper operation. The transition between the input stages occurs when VCM is near VDD – 1.1V (See Figures 2-4, 2-5 and Figure 2-6). For the best distortion performance and gain linearity, with non-inverting gains, avoid this region of operation. © 2010 Microchip Technology Inc. DS22142B-page 15 MCP6071/2/4 4.2 Rail-to-Rail Output The output voltage range of the MCP6071/2/4 op amps is VSS + 15 mV (minimum) and VDD – 15 mV (maximum) when RL = 10 kΩ is connected to VDD/2 and VDD = 6.0V. Refer to Figures 2-27 and 2-28 for more information. 4.3 4.4 Capacitive Loads Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. While a unity-gain buffer (G = +1) is the most sensitive to capacitive loads, all gains show the same general behavior. When driving large capacitive loads with these op amps (e.g., > 100 pF when G = +1), a small series resistor at the output (RISO in Figure 4-4) improves the feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitance load. – Supply Bypass With this family of operational amplifiers, the power supply pin (VDD for single-supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high frequency performance. It can use a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide large, slow currents. This bulk capacitor can be shared with other analog parts. 4.5 Unused Op Amps An unused op amp in a quad package (MCP6074) should be configured as shown in Figure 4-6. These circuits prevent the output from toggling and causing crosstalk. Circuit A sets the op amp at its minimum noise gain. The resistor divider produces any desired reference voltage within the output voltage range of the op amp; the op amp buffers that reference voltage. Circuit B uses the minimum number of components and operates as a comparator, but it may draw more current. RISO MCP607X + VIN After selecting RISO for your circuit, double-check the resulting frequency response peaking and step response overshoot. Modify RISO’s value until the response is reasonable. Bench evaluation and simulations with the MCP6071/2/4 SPICE macro model are very helpful. VOUT CL ¼ MCP6074 (A) ¼ MCP6074 (B) VDD FIGURE 4-4: Output Resistor, RISO Stabilizes Large Capacitive Loads. Figure 4-5 gives recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit's noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V). R1 VDD VDD R2 VREF R2 VREF = VDD × -------------------R1 + R2 FIGURE 4-6: Unused Op Amps. 1000 Recommended R ISO (Ω) VDD = 6.0 V RL = 10 kΩ 100 10 GN: 1 V/V 2 V/V ≥ 5 V/V 1 10p 100p 1.E-09 1n 10n 0.1µ 1µ 1.E-11 1.E-10 1.E-08 1.E-07 1.E-06 Normalized Load Capacitance; CL/GN (F) FIGURE 4-5: Recommended RISO Values for Capacitive Loads. DS22142B-page 16 © 2010 Microchip Technology Inc. MCP6071/2/4 4.6 PCB Surface Leakage In applications where low input bias current is critical, Printed Circuit Board (PCB) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012Ω. A 5V difference would cause 5 pA of current to flow; which is greater than the MCP6071/2/4 family’s bias current at +25°C (±1.0 pA, typical). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 4-7. Guard Ring FIGURE 4-7: for Inverting Gain. 1. 2. VIN– VIN+ VSS Example Guard Ring Layout Non-inverting Gain and Unity-Gain Buffer: a.Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b.Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the common mode input voltage. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors): a.Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b.Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. © 2010 Microchip Technology Inc. DS22142B-page 17 MCP6071/2/4 4.7 Application Circuits 4.7.1 4.7.2 GYRATOR The MCP6071/2/4 op amps can be used in gyrator applications. The gyrator is an electric circuit which can make a capacitive circuit behave inductively. Figure 4-8 shows an example of a gyrator simulating inductance, with an approximately equivalent circuit below. The two ZIN have similar values in typical applications. The primary application for a gyrator is to reduce the size and cost of a system by removing the need for bulky, heavy and expensive inductors. For example, RLC bandpass filter characteristics can be realized with capacitors, resistors and operational amplifiers without using inductors. Moreover, gyrators will typically have higher accuracy than real inductors, due to the lower cost of precision capacitors than inductors. INSTRUMENTATION AMPLIFIER The MCP6071/2/4 op amps are well suited for conditioning sensor signals in battery-powered applications. Figure 4-9 shows a two op amp instrumentation amplifier, using the MCP6072, that works well for applications requiring rejection of common mode noise at higher gains. The reference voltage (VREF) is supplied by a low impedance source. In single supply applications, VREF is typically VDD/2. RG VREF R1 R2 R2 R1 VOUT V2 ½ MCP6072 ½ MCP6072 V1 . RL ZIN MCP6071 C VOUT Gyrator Z IN = R L + jωL L = RL RC 4.7.3 RL Equivalent Circuit L FIGURE 4-8: FIGURE 4-9: Two Op Amp Instrumentation Amplifier. To obtain the best CMRR possible, and not limit the performance by the resistor tolerances, set a high gain with the RG resistor. R ZIN R1 2R 1 VOUT = ( V1 – V 2 ) ⎛ 1 + ------ + ---------⎞ + VREF ⎝ R2 RG ⎠ PRECISION COMPARATOR Use high gain before a comparator to improve the latter’s input offset performance. Figure 4-10 shows a gain of 11 V/V placed before a comparator. The reference voltage VREF can be any value between the supply rails. Gyrator. VIN MCP6071 1 MΩ 100 kΩ FIGURE 4-10: Comparator. DS22142B-page 18 MCP6541 VOUT VREF Precision, Non-inverting © 2010 Microchip Technology Inc. MCP6071/2/4 5.0 DESIGN AIDS Microchip provides the basic design tools needed for the MCP6071/2/4 family of op amps. 5.1 SPICE Macro Model The latest SPICE macro model for the MCP6071/2/4 op amps is available on the Microchip web site at www.microchip.com. The model was written and tested in official Orcad (Cadence) owned PSPICE. For the other simulators, it may require translation. The model covers a wide aspect of the op amp's electrical specifications. Not only does the model cover voltage, current, and resistance of the op amp, but it also covers the temperature and noise effects on the behavior of the op amp. The model has not been verified outside of the specification range listed in the op amp data sheet. The model behaviors under these conditions can not be guaranteed that it will match the actual op amp performance. Moreover, the model is intended to be an initial design tool. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 FilterLab® Software Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.3 MAPS (Microchip Advanced Part Selector) MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip website at www.microchip.com/ maps, the MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for Data Sheets, purchase, and sampling of Microchip parts. © 2010 Microchip Technology Inc. 5.4 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site at www.microchip.com/ analogtools. Some boards that are especially useful are: • • • • • • • MCP6XXX Amplifier Evaluation Board 1 MCP6XXX Amplifier Evaluation Board 2 MCP6XXX Amplifier Evaluation Board 3 MCP6XXX Amplifier Evaluation Board 4 Active Filter Demo Board Kit 5/6-Pin SOT-23 Evaluation Board, P/N VSUPEV2 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, P/N SOIC8EV • 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N SOIC14EV 5.5 Application Notes The following Microchip Analog Design Note and Application Notes are available on the Microchip web site at www.microchip. com/appnotes and are recommended as supplemental reference resources. • ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821 • AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722 • AN723: “Operational Amplifier AC Specifications and Applications”, DS00723 • AN884: “Driving Capacitive Loads With Op Amps”, DS00884 • AN990: “Analog Sensor Conditioning Circuits – An Overview”, DS00990 • AN1177: “Op Amp Precision Design: DC Errors”, DS01177 • AN1228: “Op Amp Precision Design: Random Noise”, DS01228 • AN1332: “Current Sensing Circuit Concepts and Fundamentals”, DS01332 These application notes and others are listed in the design guide: • “Signal Chain Design Guide”, DS21825 DS22142B-page 19 MCP6071/2/4 NOTES: DS22142B-page 20 © 2010 Microchip Technology Inc. MCP6071/2/4 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SOT-23 (MCP6071) YH25 XXNN 8-Lead SOIC (150 mil) (MCP6071, MCP6072) 8-Lead 2x3 TDFN (MCP6071, MCP6072) Legend: XX...X Y YY WW NNN e3 * Note: Example: MCP6071E e3 1044 SN^^ 256 XXXXXXXX XXXXYYWW NNN XXX YWW NN Example: Example: AHE 044 25 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2010 Microchip Technology Inc. DS22142B-page 21 MCP6071/2/4 Package Marking Information (Continuation) 14-Lead SOIC (150 mil) (MCP6074) Example: MCP6074 E/SL e3 1044256 XXXXXXXXXXX XXXXXXXXXXX YYWWNNN 14-Lead TSSOP (MCP6074) XXXXXXXX YYWW NNN DS22142B-page 22 Example: MCP6074E 1044 256 © 2010 Microchip Technology Inc. MCP6071/2/4 .# #$# /!- 0 # 1/ %##!# ## +22--- 2 / b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 3# 4# 5$8%1 44"" 5 56 7 5 ( 4!1# ()* 6$# !4!1# 6,9# : !!1// ; : #!%% : ( 6,<!# " : !!1/<!# " : ; 6,4# : )* ( .#4# 4 : = .# # 4 ( : ; .# > : > 4!/ ; : = 4!<!# 8 : ( !"!#$!!% #$ !% #$ #&! ! !# "'( )*+ ) #&#,$ --#$## - *) © 2010 Microchip Technology Inc. DS22142B-page 23 MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22142B-page 24 © 2010 Microchip Technology Inc. MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2010 Microchip Technology Inc. DS22142B-page 25 MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22142B-page 26 © 2010 Microchip Technology Inc. MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2010 Microchip Technology Inc. DS22142B-page 27 MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22142B-page 28 © 2010 Microchip Technology Inc. MCP6071/2/4 ! "#$%&''()*+, ! .# #$# /!- 0 # 1/ %##!# ## +22--- 2 / © 2010 Microchip Technology Inc. DS22142B-page 29 MCP6071/2/4 -. &/")0(+,12 .# #$# /!- 0 # 1/ %##!# ## +22--- 2 / D N E E1 NOTE 1 1 2 3 e h b α h A A2 c φ L A1 β L1 3# 4# 5$8%1 44"" 5 5 56 7 1# 6,9# : )* : !!1// ( : : #!%%R : ( 6,<!# " !!1/<!# " )* 6,4# ;=()* ( =)* *%U #V ( : ( .#4# 4 : .# # 4 ". .# > : ;> 4!/ : ( 4!<!# 8 : ( !%# (> : (> !%#)## (> : (> 1, $!&%#$,08$#$ #8#!-###! R%#*# # !"!#$!!% #$ !% #$ #&!( ! !# "'( )*+ ) #&#,$ --#$## ".+ % 0$ $-#$##0%%# $ - *=() DS22142B-page 30 © 2010 Microchip Technology Inc. MCP6071/2/4 .# #$# /!- 0 # 1/ %##!# ## +22--- 2 / © 2010 Microchip Technology Inc. DS22142B-page 31 MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22142B-page 32 © 2010 Microchip Technology Inc. MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging © 2010 Microchip Technology Inc. DS22142B-page 33 MCP6071/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS22142B-page 34 © 2010 Microchip Technology Inc. MCP6071/2/4 APPENDIX A: REVISION HISTORY Revision B (December 2010) The following is the list of modifications: 1. 2. 3. 4. 5. 6. 7. Added new SOT-23-5 package type for MCP6071 device. Corrected Figures 2-13, 2-22, 2-23, 2-24, 2-28, 2-29 and 2-34 in Section 2.0 “Typical Performance Curves”. Modified Table 3-1 to show the pin column for MCP6071, SOT-23-5 package. Updated Section 4.1.2 “Input Voltage Limits”. Added Section 4.1.3 “Input Current Limits”. Added new document item in Section 5.5 “Application Notes”. Updated the Product Identification System page. Revision A (March 2009) • Original Release of this Document. © 2010 Microchip Technology Inc. DS22142B-page 35 MCP6071/2/4 NOTES: DS22142B-page 36 © 2010 Microchip Technology Inc. MCP6071/2/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X /XX Device Temperature Range Package Device: Examples: a) b) c) MCP6071: MCP6071T: MCP6072: MCP6072T: MCP6074: MCP6074T: Single Op Amp Single Op Amp (Tape and Reel) (SOIC, SOT-23 and 2x3 TDFN) Dual Op Amp Dual Op Amp (Tape and Reel) (SOIC and 2x3 TDFN) Quad Op Amp Quad Op Amp (Tape and Reel) (SOIC and TSSOP) d) a) b) c) Temperature Range: E = -40°C to +125°C Package: MNY * OT = SL = SN = ST = = Plastic Dual Flat, No Lead, (2x3 TDFN ) 8-leadd Plastic Small Outline Transistor (SOT-23), 5-lead Plastic SOIC (150 mil Body), 14-lead Plastic SOIC, (150 mil Body), 8-lead Plastic TSSOP (4.4mm Body), 14-lead * Y = Nickel palladium gold manufacturing designator. Only available on the TDFN package. © 2010 Microchip Technology Inc. MCP6071T-E/OT: Tape and Reel, 5LD SOT-23 pkg MCP6071-E/SN: 8LD SOIC pkg MCP6071T-E/SN: Tape and Reel, 8LD SOIC pkg MCP6071T-E/MNY: Tape and Reel, 8LD 2x3 TDFN pkg MCP6072-E/SN: MCP6072T-E/SN: 8LD SOIC pkg Tape and Reel, 8LD SOIC pkg MCP6072T-E/MNY: Tape and Reel 8LD 2x3 TDFN pkg a) b) MCP6074-E/SL: MCP6074T-E/SL: c) d) MCP6074-E/ST: MCP6074T-E/ST: 14LD SOIC pkg Tape and Reel, 14LD SOIC pkg 14LD TSSOP pkg Tape and Reel, 14LD TSSOP pkg DS22142B-page 37 MCP6071/2/4 NOTES: DS22142B-page 38 © 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2010, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-60932-732-3 Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2010 Microchip Technology Inc. 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