TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain • Low collector-emitter saturation voltage : NPN VCE (sat) = 0.17 V (max) : PNP VCE (sat) = －0.23 V (max) • High-speed switching : NPN hFE = 400 to 1000 : PNP hFE = 200 to 500 : NPN tf = 85 ns (typ.) : PNP tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Rating Symbol NPN PNP Unit Collector-base voltage VCBO 100 −50 V Collector-emitter voltage VCEX 80 −50 V Collector-emitter voltage VCEO 50 −50 V Emitter-base voltage VEBO 7 −7 V JEDEC ― DC (Note 1) IC 1.0 −0.7 A JEITA ― Pulse (Note 1) ICP 5.0 −5.0 A TOSHIBA IB 0.1 −0.1 A Weight: 0.011 g (typ.) Collector current Base current Collector power dissipation (t=10 s) Collector power dissipation (DC) Thermal resistance, junction to ambient (t=10 s) Thermal resistance, junction to ambient (DC) Single-device operation PC (Note 2) 500 Single-device operation PC (Note 2) 400 Single-device value at dual operation PC (Note 2) 330 Single-device operation (Note 2) Single-device operation (Note 2) Single-device value at dual operation Junction temperature Storage temperature range Rth (j-a) Rth (j-a) Rth (j-a) (Note 2) 2-3T1A mW mW 250 °C/W 312 °C/W 378 Tj 150 °C Tstg −55 to 150 °C Note 1: Please use devices on condition that the junction temperature is below 150℃. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-06 TPC6901A Circuit Configuration 6 5 Marking 4 Lot code (month) Part No. (or abbreviation code) 1 2 H6B Pin #1 3 Lot No. Q1 Q2 (NPN) (PNP) Product-specific code Lot code (year) Note 4 Note 4: A dot marking identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Electrical Characteristics (Ta = 25°C): NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.1 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 0.3 A 200 ⎯ ⎯ Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 0.17 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ⎯ ⎯ 1.10 V Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 5 ⎯ pF Rise time tr See Figure 1 circuit diagram. ⎯ 35 ⎯ Storage time tstg VCC ≈ 30 V, RL = 100 Ω ⎯ 680 ⎯ Fall time tf IB1 = IB2 = 10 mA ⎯ 85 ⎯ Min Typ. Max Unit Collector output capacitance Switching time ns Electrical Characteristics (Ta = 25°C): PNP Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.1 A 200 ⎯ 500 hFE (2) VCE = −2 V, IC = −0.3 A 125 ⎯ ⎯ Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = −300 mA, IB = −10 mA ⎯ ⎯ −0.23 V Base-emitter saturation voltage VBE (sat) IC = −300 mA, IB = −10 mA ⎯ ⎯ −1.10 V VCB = −10 V, IE = 0, f = 1 MHz ⎯ 8 ⎯ pF See Figure 2 circuit diagram. ⎯ 60 ⎯ VCC ≈ －30 V, RL = 100 Ω ⎯ 280 ⎯ IB1 = IB2 = 10 mA ⎯ 70 ⎯ Collector output capacitance Switching time Cob Rise time tr Storage time tstg Fall time tf 2 ns 2009-07-06 TPC6901A . VCC VCC 20 μs Input IB1 IB1 Output IB2 Duty cycle < 1% Duty cycle < 1% Figure 1 Input 20 μs IB2 Switching Time Test Circuit & Timing Chart (NPN) Figure 2 3 RL RL IB1 IB2 IB2 Output IB1 Switching Time Test Circuit & Timing Chart (PNP) 2009-07-06 TPC6901A NPN IC – VCE hFE – IC 1.0 10 15 20 10000 hFE 4 0.6 DC current gain Collector current Ta = 100°C 6 IC (A) 8 0.8 2 IB = 1 mA 0.4 0.2 0.2 0.4 0.6 0.8 Collector−emitter voltage 1.0 VCE 10 1 0.001 1.2 0.01 Base-emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) Ta = 100°C −55°C 25°C 0.01 0.001 0.01 0.1 Collector current IC 1 (A) VBE (sat) – IC 10 Common emitter IC/IB = 50 Single nonrepetitive pulse 0.1 0.1 Collector current (V) VCE (sat) – IC 1 −55°C 25°C 100 Common emitter VCE = 2 V Single nonrepetitive pulse Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 1000 IC Common emitter IC/IB = 50 Single nonrepetitive pulse 100°C 0.1 0.001 1 Ta = −55°C 25°C 1 (A) 0.01 Collector current 0.1 IC 1 (A) Safe Operation Area 10 IC max (Pulsed)* 10ms* 1ms* 100μs* 10μs* IC – VBE Collector current (A) −55°C Ta = 100°C 0.6 0.4 25°C 0.2 0 0 0.2 0.4 1 IC max(Continuous)* 100ms* 10s* IC Collector current 0.8 Common emitter VCE = 2 V Single nonrepetitive pulse IC (A) 1.0 0.6 Base−emitter voltage 0.8 VBE 1.0 1.2 (V) 0.1 DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t 0.01 mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.001 0.1 1 VCEO max Collector-emitter voltage 4 100 10 VCE (V) 2009-07-06 TPC6901A PNP IC – VCE −1.0 −100 hFE – IC −50 10000 −40 Common emitter VCE = −2 V −0.8 hFE −20 −10 −0.6 DC current gain Collector current Single nonrepetitive pulse −15 IC (A) −30 −5 −0.4 −2 IB = −1 mA −0.2 1000 Ta = 100°C 100 −55°C 25°C 10 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 −0.2 −0.6 −0.4 −0.8 Collector−emitter voltage −1.0 VCE 1 -0.001 −1.2 -0.01 Collector current (V) VCE (sat) – IC Common emitter IC/IB = 30 Single nonrepetitive pulse -1 -0.1 Ta = 100°C −55°C 25°C -0.01 -0.001 -0.001 -0.01 -0.1 Collector current IC (A) VBE (sat) – IC -10 Base−emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) -10 -1 -0.1 IC Common emitter IC/IB = 30 Single nonrepetitive pulse Ta = −55°C -1 100°C 25°C -0.1 -0.001 -1 (A) -0.01 -0.1 Collector current IC -1 (A) Safe operation area −10 IC max (Pulse)* 10ms* 1ms* 100μs* 10μs* IC – VBE −1.0 (A) Common emitter Collector current −0.6 Ta = 100°C −0.4 25°C −55°C −0.2 0 0 −0.2 −0.4 −0.6 Base−emitter voltage −1 IC max (Continuous)* −0.8 VBE −1.0 −1.2 (V) 100ms* 10s* IC Single nonrepetitive pulse Collector current −0.8 IC (A) VCE = −2 V −0.1 DC operation Ta = 25°C *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t −0.01 mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. −0.001 −0.1 −1 VCEO max −10 Collector−emitter voltage 5 −100 VCE (V) 2009-07-06 TPC6901A Common rth – tw Transient thermal resistance rth(j-a) (°C/W) 1000 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Single-device operation 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Permissible power dissipation for Q2 PC (W) Permissible Power Dissipation for Simultaneous Operation 0.5 0.4 0.3 0.2 0.1 DC operation Ta = 25°C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0 0 0.1 0.2 0.3 0.4 0.5 Permissible power dissipation for Q1 PC (W) Collector power dissipation at the single-device operation is 0.4W. Collector power dissipation at the single-device value at dual operation is 0.33W. Collector power dissipation at the dual operation is set to 0.66W. 6 2009-07-06 TPC6901A RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-07-06