TOSHIBA GT60M322

GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
•
Enhancement mode type
•
High speed
•
Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
•
FRD included between emitter and collector
•
TO-3P(LH) (Toshiba package name)
Unit: mm
: tf = 0.15 µs (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
950
V
Gate-emitter voltage
VGES
±25
V
Collector current
Diode forward current
Collector power
dissipation
DC
IC
60
1ms
ICP
120
DC
IF
25
Pulsed
IFP
50
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
PC
76
190
A
A
―
JEITA
―
TOSHIBA
W
2-21F2C
Weight: 9.75 g (typ.)
Tj
150
°C
Tstg
−55 to 150
°C
Characteristics
Symbol
Max
Unit
Thermal resistance (IGBT)
Rth (j-c)
0.66
°C/W
Thermal resistance (diode)
Rth (j-c)
1.38
°C/W
Storage temperature range
JEDEC
Thermal Characteristics
Equivalent Circuit
Marking
Collector
Part No. (or abbreviation code)
TOSHIBA
Gate
GT60M322
Lot No.
Emitter
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06
GT60M322
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±25 V, VCE = 0
―
―
±500
nA
Collector cut-off current
ICES
VCE = 950 V, VGE = 0
―
―
1.0
mA
VGE (OFF)
IC = 60 mA, VCE = 5 V
6.0
―
9.0
V
VCE (sat)
IC = 60 A, VGE = 15 V
―
2.3
2.7
V
VCE = 10 V, VGE = 0, f = 1 MHz
―
6800
―
pF
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Cies
tr
Rise time
Switching time
Turn-on time
ton
Fall time
tf
Resistive Load
―
0.42
―
VCC = 600 V, IC = 60 A
―
0.62
―
VGG = ±15 V, RG = 30 Ω
―
0.15
0.21
(Note 1)
µs
―
0.39
―
Diode forward voltage
VF
IF = 25 A, VGE = 0
―
―
3.0
V
Reverse recovery time
trr
IF = 25 A, di/dt = −200 A/µs
―
―
0.35
µs
Turn-off time
toff
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
10%
0
RG
RL
IC
0
90%
VCC
0
90%
10%
VCE
10%
td (off)
tf
toff
2
tr
ton
2004-07-06
GT60M322
IC – VCE
VCE – VGE
120
10
20
15
80
10
Collector-emitter voltage
Collector current IC
(A)
100
VCE (V)
Common
emitter
Tc = 25°C
60
40
VGE = 9 V
20
0
0
1
2
3
4
Collector-emitter voltage
VCE
Common
emitter
Tc = -40°C
8
80
6
4
60
30
2
IC = 10 A
0
0
5
5
(V)
Gate-emitter voltage
VCE – VGE
VCE (V)
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
80
6
4
60
2
5
IC = 10 A
10
15
Gate-emitter voltage
20
VGE
8
(V)
80
6
4
60
2
30
0
0
25
5
IC = 10 A
10
15
Gate-emitter voltage
(V)
20
VGE
25
(V)
VCE (sat) – Tc
4
Common
emitter
VCE = 5 V
Common
Collector-emitter saturation voltage
VCE (sat) (V)
(A)
IC
Collector current
80
25
Common
emitter
Tc = 125°C
IC – VGE
100
VGE
10
Common
emitter
Tc = 25°C
8
0
0
20
VCE – VGE
10
30
15
10
60
40
25
20
−40
emitter
VGE = 15 V
3
80
60
2
30
IC = 10 A
1
TC = 125°C
0
0
4
8
Gate-emitter voltage
12
VGE
0
−40
16
(V)
0
40
Case temperature
3
80
Tc
120
160
(°C)
2004-07-06
GT60M322
VCE, VGE – QG
C – VCE
200
100000
20
Common
8
100 V
50 V
40
4
(pF)
80
10000
f = 1 MHz
Tc = 25°C
Cies
C
12
emitter
VGE = 0
Capacitance
VCE = 150 V
120
16
(V)
160
VGE
emitter
RL = 2.5 Ω
Tc = 25°C
Gate-emitter voltage
Collector-emitter voltage
VCE (V)
Common
1000
100
Coes
Cres
0
0
50
100 150 200
250 300 350
Gate charge
QG
0
400 450 500
10
1
10
(V)
Switching Time – IC
Common emitter
VCC = 600 V
toff
ton
(µs)
Switching time
1
tr
0.1
tf
Common emitter
VCC = 600 V
toff
0.1
1
VCE
10000
1
IC = 60 A
VGG = ±15 V
Tc = 25°C
(µs)
Switching time
1000
Collector-emitter voltage
(nC)
Switching Time – RG
10
100
RG = 30 Ω
VGG = ±15 V
Tc = 25°C
ton
tf
tr
10
100
Gate resistance
RG
0.01
0
1000
(Ω)
10
20
30
40
Collector current IC
Safe Operating Area
50
60
70
(A)
Reverse Bias SOA
1000
1000
Tj <
= 125°C
10
(A)
10 µs*
DC
operation
* Single
non-repetitive
pulse Tc = 25°C
1
Curves must be
derated linearly
with increase in
temperature.
0.1
1
10
1 ms*
10 ms
*
100
Collector- emitter voltage
1000
VCE
100
IC
100 µs*
IC max
(continuous)
Collector current
Collector current
RG = 10 Ω
100
IC
(A)
VGG = 20 V
IC max (pulsed)*
10
1
0.1
1
3000
(V)
10
100
Collector-emitter voltage
4
1000
VCE
3000
(V)
2004-07-06
GT60M322
Transient thermal impedance
Rth (t)
(°C/W)
Rth (t) – tw
IF – VF
102
50
Tc = 25°C
−40
25
40
101
Common
collector
30
Diode stage
0
10
IGBT stage
20
10−1
10
10−2
10−4
10−3
10−2
10−1
Pulse width
100
tw
101
0
0
102
(s)
Tc = 125°C
1
2
Forward voltage
3
VF
4
5
(V)
trr, Irr – IF
100
trr
0.1
10
Irr
Common Collector
di/dt = −200 A/µs
: Tc = 25°C
: Tc = 125°C
0.01
0
5
10
15
Forward current
20
IF
25
Peak reverse recovery current
Reverse recovery time
trr
Irr
(µs)
(A)
1
1
30
(A)
5
2004-07-06
GT60M322
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6
2004-07-06