MIG100Q6CMB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100Q6CMB1X (1200V/100A 6in1) High Power Switching Applications Motor Control Applications · Integrates inverter power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. · The electrodes are isolated from case. · VCE (sat) = 2.4 V (typ.) · UL recognized File No. E87989 · Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND GND GND GND GND GND VS OUT VS OUT W VS OUT V VS OUT VS OUT U VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2002-02-27 MIG100Q6CMB1X Package Dimensions: TOSHIBA 2-123A1A Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2002-02-27 MIG100Q6CMB1X Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2002-02-27 MIG100Q6CMB1X Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Ratings Unit P-N power terminal VCC 900 V ¾ VCES 1200 V IC 100 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 100 A Collector power dissipation Tc = 25°C PC 960 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND (L) terminal VFO 20 V Fault output current FO sink current IFO 14 mA Control Operating temperature ¾ Tc -20~+100 °C Storage temperature range ¾ Tstg -40~+125 °C VISO 2500 V ¾ 3 N·m Module Isolation voltage AC 1 minute Screw torque (terminal/mounting) M5 Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 1200 V VD = 15 V, IC = 100 A, VIN = 15 V ® 0 V Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C ¾ 2.4 2.8 Tj = 125°C ¾ ¾ 3.2 ¾ 2.2 2.6 ¾ 3.0 4.0 ¾ 0.35 ¾ ¾ 0.3 ¾ ¾ 1.5 2.5 ¾ 0.3 ¾ IF = 100 A, Tj = 25°C ton tc (on) Switching time trr toff VCC = 600 V, IC = 100 A, VD = 15 V, VIN = 15 V « 0 V, Tj = 25°C, Inductive load (Note 1) tc (off) Unit mA V V ms Note 1: Switching time test circuit and timing chart. 4 2002-02-27 MIG100Q6CMB1X 2. Control Stage (Tj = 25°C) Characteristic Control circuit current Symbol High side ID (H) Low side ID (L) Test Condition VD = 15 V Min Typ. Max ¾ 13 17 ¾ 39 51 Unit mA Input-on signal voltage VIN (on) VD = 15 V 1.4 1.6 1.8 V Input-off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V Protection IFO (on) ¾ 10 12 Normal IFO (off) VD = 15 V, Tj < = 125°C ¾ ¾ 0.1 Fault output current Over current protection trip level Short-circuit current protection trip level Over current cut-off time OC VD = 15 V, Tj < = 125°C 160 ¾ ¾ A SC VD = 15 V, Tj < = 125°C 160 ¾ ¾ A ¾ 5 ¾ ms 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ¾ ¾ 0.130 FWD ¾ ¾ 0.190 Compound is applied ¾ 0.013 ¾ toff (OC) Trip level VD = 15 V OT Over temperature protection Reset level Control supply under voltage protection Trip level UV Reset level UVr Case temperature Fault output pulse width mA OTr tFO ¾ VD = 15 V °C V 3. Thermal Resistance (Tc = 25°C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2002-02-27 MIG100Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 47 mF 15 V GND GND U (V, W) VCC VD IF = 16 mA 0.1 mF 15 kW OUT IN PG VS 47 mF 15 V GND N GND Timing Chart Input Pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% 10% 10% 20% Irr trr 10% tc (on) tc (off) ton toff 6 2002-02-27 MIG100Q6CMB1X 4. Recommended conditions for application Characteristic Symbol VCC Supply voltage Test Condition P-N Power terminal Min Typ. Max Unit ¾ 600 800 V 13.5 15 16.5 V Control supply voltage VD VD-GND Signal terminal Carrier frequency fc PWM Control ¾ ¾ 20 kHz Switching time test circuit (see page.6) (Note 2) 4 ¾ ¾ ms tdead Dead time Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2002-02-27 MIG100Q6CMB1X IC – VCE IC – VCE 200 VD = 15 V VD = 17 V VD = 15 V VD = 17 V 150 IC VD = 13 V Collector current Collector current (A) 150 IC (A) 200 100 50 VD = 13 V 100 50 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Tj = 125°C 4 Collector-emitter voltage VCE 0 0 5 1 (V) 2 3 4 Collector-emitter voltage Switching time – IC VCE (V) Switching time – IC 10 10 ton (ms) toff 1 Switching time Switching time (ms) ton tc (on) tc (off) 0.1 Tj = 25°C toff 1 tc (on) tc (off) 0.1 Tj = 125°C VCC = 600 V VD = 15 V VCC = 600 V VD = 15 V L-LOAD 0.01 0 20 40 60 80 Collector current IC 100 L-LOAD 0.01 0 120 20 40 IF – VF 80 IC 100 120 (A) trr, Irr – IF 100 Peak reverse recovery current Irr (A) Reverse recovery time trr (´10 nS) (A) Forward current IF 60 Collector current (A) 200 150 100 50 Common cathode : Tj = 25°C : Tj = 125°C 0 0 5 1 2 Forward voltage 3 VF 4 50 30 10 5 3 Common cathode : Tj = 25°C 1 0 5 (V) trr Irr : Tj = 125°C 20 40 60 Forward current 8 80 IF 100 120 (A) 2002-02-27 MIG100Q6CMB1X ID (H) – fc OC – Tc Over current protection trip level OC (A) High side control circuit current ID (H) (mA) 300 250 200 150 100 50 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 30 25 20 15 10 5 VD = 15 V 0 0 150 5 (°C) 10 Carrier frequency fc ID (L) – fc 20 25 (kHz) Reverse bias SOA 100 200 80 160 IC (A) OC 60 120 Collector current Low side control circuit current ID (L) (mA) 15 40 20 80 40 Tj < = 125°C VD = 15 V 0 0 5 10 15 Carrier frequency fc 20 VD = 15V 0 0 25 (kHz) 200 400 600 800 Collector-emitter voltage 1000 1200 VCE (V) 1400 Rth (t) – tw Transient thermal resistance Rth (t)/(°C/W) 10 TC = 25°C 1 Diode stage 0.1 Transistor stage 0.01 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 9 2002-02-27 MIG100Q6CMB1X 50 50 Eon (mJ) 30 Eoff (mJ) 30 10 Turn off loss Turn off loss – IC 100 Turn on loss Turn on loss – IC 100 10 5 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 3 1 0 20 40 60 Collector current 80 IC 100 5 1 0 120 (A) VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 3 20 40 60 Collector current 10 80 IC 100 120 (A) 2002-02-27 MIG100Q6CMB1X RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2002-02-27