TOSHIBA MIG100J7CSB1W

MIG100J7CSB1W
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG100J7CSB1W (600V/100A 7in1)
High Power Switching Applications
Motor Control Applications
·
Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against
short-circuit current, overcurrent, undervoltage and overtemperature) into a single package.
·
The electrodes are isolated from the case
·
Low thermal resistance
·
VCE (sat) = 1.9 V (typ.)
·
UL recognized: File No.E87989
·
Weight: 278 g (typ.)
Equivalent Circuit
1.
VD (U)
2.
FO (U)
8.
15.
3.
IN (U)
4.
GND (U)
5.
VD (V)
GND (V)
9.
Open
16.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
1
6.
FO (V)
7.
IN (V)
13.
VD (L)
14.
FO (L)
20.
GND (L)
2001-11-13
MIG100J7CSB1W
Package Dimensions: TOSHIBA 2-108G1A
Unit: mm
1.
VD (U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
VD (V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
13.
VD (L)
14.
FO (L)
15.
Open
16.
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
20.
GND (L)
2
2001-11-13
MIG100J7CSB1W
Signal Terminal Layout
Unit: mm
1.
VD (U)
2.
FO (U)
3.
IN (U)
4.
GND (U)
5.
VD (V)
6.
FO (V)
7.
IN (V)
8.
GND (V)
9.
VD (W)
10.
FO (W)
11.
IN (W)
12.
GND (W)
13.
VD (L)
14.
FO (L)
15.
Open
16.
IN (B)
17.
IN (X)
18.
IN (Y)
19.
IN (Z)
20.
GND (L)
3
2001-11-13
MIG100J7CSB1W
Maximum Ratings (Tj = 25°C)
Stage
Characteristic
Condition
Supply voltage
VCC
450
V
VCES
600
V
Collector current
Tc = 25°C, DC
IC
100
A
Forward current
Tc = 25°C, DC
IF
100
A
Collector power dissipation
Tc = 25°C, DC
PC
590
W
Tj
150
°C
P-N Power terminal
VCC
450
V
¾
VCES
600
V
IC
50
A
¾
VR
600
V
IF
50
A
¾
Supply voltage
Collector-emitter voltage
Tc = 25°C, DC
Collector current
Reverse voltage
Forward current
Tc = 25°C, DC
Collector power dissipation
Tc = 25°C, DC
¾
Junction temperature
Control
Module
Unit
¾
Junction temperature
Brake
Rating
P-N Power terminal
Collector-emitter voltage
Inverter
Symbol
PC
340
W
Tj
150
°C
Control supply voltage
VD-GND Terminal
VD
20
V
Input voltage
IN-GND Terminal
VIN
20
V
Fault output voltage
FO-GND Terminal
VFO
20
V
Fault output current
FO sink current
IFO
14
mA
Operating temperature
¾
Tc
-20~ + 100
°C
Storage temperature Range
¾
Tstg
-40~ + 125
°C
VISO
2500
V
Isolation voltage
AC 1 min
Screw torque (Terminal)
M4
¾
2
Screw torque (Mounting)
M5
¾
3
N・m
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
Test Condition
Min
Typ.
Max
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
Tj = 25°C
1.6
1.9
2.3
Tj = 125°C
¾
2.1
¾
IF = 100 A, Tj = 25°C
¾
2.1
2.5
¾
1.3
2.2
VCC = 300 V, IC = 100 A
VD = 15 V, VIN = 15 V « 0 V
Tj = 25°C, Inductive load
¾
0.3
¾
¾
0.2
¾
¾
1.1
2.1
¾
0.2
¾
VCE = 600 V
VD = 15 V
IC = 100 A
VIN = 15 V ® 0 V
ton
tc (on)
Switching time
trr
toff
(Note 1)
tc (off)
Unit
mA
V
V
ms
Note 1: Switching time test circuit & timing chart
4
2001-11-13
MIG100J7CSB1W
2. Brake stage
Characteristics
Collector cut-off current
Symbol
ICEX
Collector-emitter saturation voltage
VCE (sat)
Reverse current
Forward voltage
Test Condition
Min
Typ.
Max
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
Tj = 25°C
¾
1.8
2.2
Tj = 125°C
¾
2.0
¾
Tj = 25°C
¾
¾
1
Tj = 125°C
¾
¾
10
1.5
1.9
2.3
¾
1.3
1.8
¾
0.65
¾
¾
0.8
¾
¾
1.1
2.1
¾
0.2
¾
Min
Typ.
Max
¾
13
17
¾
52
68
1.4
1.6
1.8
2.2
2.5
2.8
¾
10
12
¾
¾
0.1
VD = 15 V, Tj <
= 125°C
160
¾
¾
80
¾
¾
VD = 15 V, Tj <
= 125°C
160
¾
¾
80
¾
¾
¾
5
¾
110
118
125
¾
98
¾
11.0
12.0
12.5
12.0
12.5
13.0
1
2
3
ms
Min
Typ.
Max
Unit
Inverter IGBT
¾
¾
0.210
Inverter FRD
¾
¾
0.313
Brake IGBT
¾
¾
0.360
Brake FRD
¾
¾
0.600
Compound is applied
¾
0.017
¾
VCE = 600 V
VD = 15 V
IC = 50 A
VIN = 15 V ® 0 V
IR
VR = 600 V
VF
IF = 50 A, Tj = 25°C
ton
tc (on)
Switching time
trr
VCC = 300 V, IC = 50 A
VD = 15 V, VIN = 15 V « 0 V
Tj = 25°C, Inductive load
toff
(Note 1)
tc (off)
Unit
mA
V
mA
V
ms
Note 1: Switching time test circuit & timing chart
3. Control stage (Tj = 25°C)
Characteristics
Control circuit current
Symbol
High side
ID (H)
Low side
ID (L)
Input on signal voltage
VIN (on)
Input off signal voltage
VIN (off)
Protection
IFO (on)
Normal
IFO (off)
Fault output current
Over current protection
trip level
Inverter
OC
Brake
Short circuit protection trip Inverter
level
Brake
Over current cut-off time
SC
toff (OC)
Over temperature
protection
Trip level
Reset level
OTr
Control supply under
voltage protection
Trip level
UV
Reset level
UVr
Test Condition
VD = 15 V
VD = 15 V
VD = 15 V
VD = 15 V
Case temperature
tFO
mA
V
OT
Fault output pulse width
Unit
¾
VD = 15 V
mA
A
A
ms
°C
V
4. Thermal resistance (Tc = 25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
5
°C/W
°C/W
2001-11-13
MIG100J7CSB1W
Switching Time Test Circuit
Intelligent power module
TLP559
P
VD
0.1 mF
15 kW
OUT
IN
VS
10 mF
15 V
GND
GND
U (V, W, B)
VCC
VD
IF =
16mA
0.1 mF
15 kW
OUT
IN
PG
VS
10 mF
15 V
GND
N
GND
Timing Chart
Input pulse
15 V
VIN Waveform
2.5 V
1.6 V
0
90% Irr
Irr
IC Waveform
90%
VCE Waveform
10%
toff
10%
10%
tc (off)
ton
6
20% Irr
trr
10%
tc (on)
2001-11-13
MIG100J7CSB1W
5. Recommended conditions for application
Characteristics
Supply voltage
Symbol
VCC
Test Condition
P-N Power terminal
Min
Typ.
Max
Unit
¾
300
400
V
13.5
15
16.5
V
Control supply voltage
VD
VD-GND Signal terminal
Carrier frequency
fc
PWM Control
¾
¾
20
kHz
Switching time test circuit
(See page.6)
(Note 2)
3
¾
¾
ms
Dead time
tdead
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
15 V
VIN Waveform
0
15 V
VIN Waveform
0
tdead
tdead
7
2001-11-13
MIG100J7CSB1W
IC – VCE
IC – VCE
200
200
VD = 17 V
(A)
13 V
15 V
Collector current
Collector current
100
50
0
0
1
150
15 V
100
50
Common emitter
Common emitter
Tj = 25°C
Tj = 125°C
2
3
Collector-emitter voltage
VCE
0
0
4
(V)
1
5
5
3
3
1
(ms)
ton
toff
Switching time
(ms)
Switching time
10
0.5
tc (on)
0.3
tc (off)
0.1
Tj = 25°C
0.01
0
40
20
60
Collector current
80
IC
(V)
100
toff
1
0.5
tc (on)
0.3
tc (off)
0.1
Tj = 125°C
VCC = 300 V
VD = 15 V
L-Load
0.01
0
120
20
(A)
40
60
100
80
Collector current
IF – VF
IC
120
(A)
trr, Irr – IF
100
Peak reverse recovery current Irr (A)
Peak reverse recovery time trr (´10ns)
(A)
4
ton
0.03
200
150
100
50
Common cathode
:Tj = 25°C
:Tj = 125°C
0
0
VCE
0.05
VCC = 300 V
VD = 15 V
L-Load
0.03
3
Switching time – IC
10
0.05
2
Collector-emitter voltage
Switching time – IC
Forward current IF
13 V
IC
150
IC
(A)
VD = 17 V
1
2
Forward voltage
3
VF
Irr
30
trr
10
3
1
0
4
(V)
Common cathode
:Tj = 25°C
:Tj=125°C
20
40
60
Forward current
8
80
IF
100
120
(A)
2001-11-13
MIG100J7CSB1W
OC – TC
ID (H) – fc
(mA)
250
High side control circuit current ID (H)
Over current protection trip level
OC (A)
300
Inverter stage
200
150
Brake stage
100
50
VD = 15 V
0
0
25
50
75
100
Case temperature TC
125
150
30
25
20
15
10
5
VD = 15 V
Tj = 25°C
0
0
5
(°C)
10
Carrier frequency fc
25
(kHz)
180
OC
(A)
80
140
IC
160
120
100
60
40
20
VD = 15 V
Tj = 25°C
0
0
5
10
15
Carrier frequency fc
20
80
60
40
20
Tj <
= 125°C
VD = 15 V
0
0
25
100
(kHz)
400
500
Collector-emitter voltage
VCE
Rth (t) – tw Inverter stage
1
Tc = 25°C
0.5
Diode stage
300
600
700
(V)
1
Tc = 25°C
Diode stage
0.5
0.3
Transient thermal resistance Rth (t)
0.3
Transistor stage
0.1
0.05
0.03
0.01
0.005
0.003
0.001
0.001
200
Rth (t) – tw Brake stage
(°C/W)
(°C/W)
20
Reverse bias SOA
100
Collector current
Low side control circuit current ID (L)
(mA)
ID (L) – fc
Transient thermal resistance Rth (t)
15
0.01
0.1
Pulse width
1
tw
10
(s)
Transistor stage
0.1
0.05
0.03
0.01
0.005
0.003
0.001
0.001
0.01
0.1
Pulse width
9
1
tw
10
(s)
2001-11-13
MIG100J7CSB1W
Turn off loss - IC
5
5
3
3
(mJ)
10
Eoff
1
0.5
0.3
Turn off loss
Turn on loss Eon
(mJ)
Turn on loss - IC
10
0.1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.05
0.03
0.01
0
20
40
60
Collector current
80
IC
100
1
0.5
0.3
0.1
VCC = 300 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.05
0.03
0.01
0
120
20
40
60
Collector current
(A)
10
80
IC
100
120
(A)
2001-11-13
MIG100J7CSB1W
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
11
2001-11-13