MIG50J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50J101H High Power Switching Applications Motor Control Applications l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 2.5 V (max) toff = 3.0 µs (max) trr = 0.30 µs (max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit 1 2002-10-31 MIG50J101H Maximum Ratings (Tj = 25°C ) Stage Characteristic Condition Supply voltage P-N power terminal Collector-emitter voltage Inverter ― Module Ratings Unit VCC 450 V VCES 600 V IC 50 A Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 50 A Collector power dissipation Tc = 25°C PC 150 W Tj 150 °C Junction temperature Control Symbol ― Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND (L) terminal VFO 20 V Fault output current FO sink current IFO 14 mA Operating temperature ― TC −20 ~ +100 °C Storage temperature range ― Tstg −40 ~ +125 °C VISO 2500 V ― 3 Nm Isolation voltage AC 1 minute Screw torque M5 Electrical Characteristics (Tj = 25°C) a. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF ton Switching time toff tf Test Condition VCE = 600V VD = 15 V, IC = 50 A VIN = 15 V → 0 V Min Typ. Max Tj = 25°C ― ― 1 Tj = 125°C ― ― 20 Tj = 25°C ― 2.0 2.5 Tj = 125°C ― 2.0 ― ― 2.1 3.0 ― 0.8 2.0 ― 1.2 3.0 ― 0.25 0.5 ― 0.1 0.3 IF = 50A VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V ↔ 0 V Inductive load (Note 1) trr 2 Unit mA V V µs 2002-10-31 MIG50J101H b. Control Stage (Tj = 25°C) Characteristic Control circuit current Symbol High side ID (H) Low side ID (L) Test Condition VD = 15 V Min Typ. Max ― 8 ― ― 24 ― Unit mA Input-on signal voltage VIN (on) VD = 15 V, IC = 50 mA 1.3 1.5 1.7 V Input-off signal voltage VIN (off) VD = 15 V, IC = 50 mA 2.2 2.5 2.8 V 8 10 12 ― ― 1 Protection IFO (on) Normal IFO (off) Over current protection trip level Inverter OC VD = 15 V, Tj = 125°C 75 100 ― A Short circuit protection trip level Inverter OC VD = 15 V, Tj = 125°C 110 150 ― A ― 5 ― µs 110 118 125 ― 98 ― 11.0 12.0 12.5 ― 12.5 ― 1 2 3 Fault output current Over current cut-off time toff (OC) Over temperature protection Trip level OT Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr Fault output pulse width tFO ― VD = 15 V Case temperature ― VD = 15 V 3 mA °C V ms 2002-10-31 MIG50J101H c. Thermal Resistance (Tj = 25°C) Characteristic Symbol Junction to case thermal resistance Rth (j-c) Case to fin thermal resistance Rth (c-f) Test Condition Min Typ. Max Inverter IGBT stage ― ― 0.833 Inverter FRD stage ― ― 2.000 Compound is applied ― 0.05 ― Unit °C / W °C / W Note 1: Switching time test circuit & timing chart Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 33 mF 15 V GND IF = 16 mA GND U (V, W) VD 0.1 mF VCC 15 kW OUT PG IN 15 V VS 66 mF GND 4 GND E2 2002-10-31 MIG50J101H 5 2002-10-31 MIG50J101H 6 2002-10-31 MIG50J101H Package Dimensions: TOSHIBA 2-110A1A Unit: mm 7 2002-10-31 MIG50J101H RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-10-31