MIG50Q7CSB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG50Q7CSB1X (1200V/50A 7in1) High Power Switching Applications Motor Control Applications · Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. · The electrodes are isolated from case. · VCE (sat) = 2.2 V (typ.) · UL recognized File No. E87989 · Weight: 278 g (typ.) Equivalent Circuit 20 19 18 16 17 15 14 12 11 10 13 9 8 7 6 4 5 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND GND GND GND GND GND GND VS OUT VS OUT W VS OUT V VS OUT U VS OUT VS OUT B VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2002-02-27 MIG50Q7CSB1X Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2002-02-27 MIG50Q7CSB1X Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2002-02-27 MIG50Q7CSB1X Maximum Ratings (unless otherwise specified, Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Ratings Unit P-N power terminal VCC 900 V ¾ VCES 1200 V IC 50 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 50 A Collector power dissipation Tc = 25°C PC 580 W Tj 150 °C P-N power terminal VCC 900 V ¾ VCES 1200 V IC 40 A VR 1200 V ¾ Junction temperature Supply voltage Collector-emitter voltage Tc = 25°C, DC Collector current Brake ¾ Reverse voltage Forward current Tc = 25°C, DC IF 40 A Collector power dissipation Tc = 25°C PC 500 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND terminal VFO 20 V Fault output current FO sink current IFO 14 mA Control Module Operating temperature ¾ Tc -20~+100 °C Storage temperature range ¾ Tstg -40~+125 °C Isolation voltage AC 1 minute VISO 2500 V Screw torque (terminal) M4 ¾ 2 N·m Screw torque (mounting) M5 ¾ 3 N·m Electrical Characteristics 1. Inverter Stage Characteristic Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 1200 V VD = 15 V, IC = 50 A, VIN = 15 V ® 0 V Switching time trr toff Max Tj = 25°C ¾ ¾ 1 ¾ ¾ 10 Tj = 25°C ¾ 2.2 2.6 Tj = 125°C ¾ ¾ 3.0 ¾ 2.4 2.8 ¾ 2.0 3.0 ¾ 0.3 ¾ ¾ 0.3 ¾ ¾ 1.5 2.5 ¾ 0.4 ¾ IF = 50 A, Tj = 25°C VCC = 600 V, IC = 50 A, VD = 15 V, VIN = 15 V « 0 V, Tj = 25°C, Inductive load (Note 1) tc (off) Typ. Tj = 125°C ton tc (on) Min Unit mA V V ms Note 1: Switching time test circuit and timing chart. 4 2002-02-27 MIG50Q7CSB1X 2. Brake Stage Characteristic Collector cut-off current Symbol ICEX Collector-emitter saturation voltage Reverse current Forward voltage VCE (sat) Test Condition VCE = 1200 V VD = 15 V, IC = 40 A, VIN = 15 V ® 0 V IR VR = 1200 V VF IF = 40 A, Tj = 25°C Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C ¾ 2.2 2.6 Tj = 125°C ¾ ¾ 3.0 Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 ¾ 1.7 2.1 ¾ 2.0 3.0 ¾ 0.75 ¾ ¾ 0.7 ¾ ¾ 1.5 2.5 ¾ 0.3 ¾ Min Typ. Max ¾ 13 17 ¾ 52 68 ton tc (on) Switching time trr toff VCC = 600 V, IC = 40 A, VD = 15 V, VIN = 15 V « 0 V, Tj = 25°C, Inductive load (Note 1) tc (off) Unit mA V mA V ms Note 1: Switching time test circuit and timing chart. 3. Control Stage (Tj = 25°C) Characteristic Control circuit current High side ID (H) Low side ID (L) Input-on signal voltage Input-off signal voltage Short-circuit current protection trip level Over temperature protection Control supply under voltage protection 1.6 1.8 V VIN (off) VD = 15 V 2.2 2.5 2.8 V 8 10 12 ¾ ¾ 0.1 80 ¾ ¾ 65 ¾ ¾ 80 ¾ ¾ 65 ¾ ¾ ¾ 5 ¾ 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit Inverter IGBT stage ¾ ¾ 0.215 Inverter FRD stage ¾ ¾ 0.464 Brake IGBT stage ¾ ¾ 0.25 Brake FRD stage ¾ ¾ 0.6 Compound is applied ¾ 0.017 ¾ IFO (off) Inverter OC Brake Inverter SC Brake toff (OC) VD = 15 V VD = 15 V, Tj < = 125°C VD = 15 V, Tj < = 125°C VD = 15 V OT Case temperature Reset level OTr Trip level UV Reset level UVr Fault output pulse width mA 1.4 Normal Trip level VD = 15 V Unit VD = 15 V IFO (on) Over current cut-off time Test Condition VIN (on) Protection Fault output current Over current protection trip level Symbol tFO ¾ VD = 15 V mA A A ms °C V 4. Thermal Resistance (Tc = 25°C) Characteristic Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2002-02-27 MIG50Q7CSB1X Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 10 mF 15 V GND GND U (V, W, B) VCC VD IF = 16 mA 0.1 mF 15 kW OUT IN PG VS 10 mF 15 V GND N GND Timing Chart Input Pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% 10% 10% 20% Irr trr 10% tc (on) tc (off) ton toff 6 2002-02-27 MIG50Q7CSB1X 5. Recommended conditions for application Characteristic Symbol VCC Supply voltage Test Condition P-N Power terminal Min Typ. Max Unit ¾ 600 800 V 13.5 15 16.5 V Control supply voltage VD VD-GND Signal terminal Carrier frequency fc PWM Control ¾ ¾ 20 kHz Switching time test circuit (see page.6) (Note 2) 3 ¾ ¾ ms tdead Dead time Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2002-02-27 MIG50Q7CSB1X IC – VCE IC – VCE 100 100 (A) VD = 17 V VD = 13 V Collector current Collector current 75 VD = 17 V IC 75 IC (A) VD = 15 V VD = 15 V 50 25 VD = 13 V 50 25 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Tj = 125°C 4 Collector-emitter voltage VCE 0 0 5 (V) 1 Switching time – IC 4 VCE ton 3 (ms) toff Switching time 1 tc (off) tc (on) 0.3 0.1 Tj = 25°C VCC = 600 V VD = 15 V 0.03 1 tc (off) tc (on) 0.3 0.1 Tj = 125°C VCC = 600 V VD = 15 V 0.03 L-LOAD 10 20 30 40 Collector current IC 50 L-LOAD 0.01 0 60 10 20 IF – VF 40 IC 50 60 (A) trr, Irr – IF 100 Peak reverse recovery current Irr (A) Reverse recovery time trr (´10 nS) (A) Forward current IF 30 Collector current (A) 100 75 50 25 Common cathode : Tj = 25°C : Tj = 125°C 0 0 (V) Switching time – IC ton toff 0.01 0 5 10 3 (ms) 3 Collector-emitter voltage 10 Switching time 2 1 2 Forward voltage 3 VF 4 Irr 30 trr 10 3 Common cathode : Tj = 25°C 1 0 5 (V) : Tj = 125°C 10 20 30 Forward current 8 50 40 IF 60 (A) 2002-02-27 MIG50Q7CSB1X ID (H) – fc OC – Tc High side control circuit current ID (H) (mA) Over current protection trip level OC (A) 150 Inverter stage 125 100 Brake stage 75 50 25 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 20 16 12 8 4 VD = 15 V 0 0 150 5 (°C) 10 Carrier frequency fc ID (L) – fc 25 (kHz) 100 (A) OC 80 IC 60 60 Collector current Low side control circuit current ID (L) (mA) 20 Reverse bias SOA 80 40 20 40 20 Tj < = 125°C VD = 15V VD = 15 V 0 0 5 10 15 Carrier frequency fc 20 0 0 25 200 (kHz) 400 600 800 Collector-emitter voltage Rth (t) – tw Inverter stage 1000 1200 VCE (V) 1400 Rth (t) – tw Brake stage 10 10 Tc = 25°C Transient thermal resistance Rth (t)/(°C/W) Tc = 25°C Transient thermal resistance Rth (t)/(°C/W) 15 1 Diode stage Inverter stage 0.1 0.01 0.001 0.01 0.1 Pulse width 1 tw 1 Inverter stage 0.1 0.01 0.001 10 Diode stage 0.01 0.1 Pulse width (s) 9 1 tw 10 (s) 2002-02-27 MIG50Q7CSB1X Turn on loss – IC Turn off loss – IC Eoff (mJ) 100 10 1 0.1 0 Turn off loss Turn on loss Eon (mJ) 100 VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 20 30 Collector current 40 IC 50 10 1 0.1 0 60 (A) VCC = 600 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 10 10 30 Collector current 10 40 IC 50 60 (A) 2002-02-27 MIG50Q7CSB1X RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2002-02-27