BC847PN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 3 and 4) Top View Maximum Ratings, NPN Section • • • • C1 B2 E2 E1 B1 C2 Device Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Maximum Ratings, PNP Section • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) Value 50 45 6.0 100 200 200 Unit V V V mA mA mA Value -50 -45 -5.0 -100 -200 -200 Unit V V V mA mA mA Value 200 625 -65 to +150 Unit mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Symbol VCBO VCEO VEBO IC ICM IEM Thermal Characteristics Characteristic Power Dissipation (Note 1) @ TA = 25°C Total Device Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RθJA TJ, TSTG Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants BC847PN Document number: DS30278 Rev. 12 - 2 1 of 4 www.diodes.com November 2008 © Diodes Incorporated BC847PN Electrical Characteristics, NPN Section @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol (Note 5) V(BR)CBO (Note 5) V(BR)CEO (Note 5) V(BR)EBO (Note 5) hFE Min 50 45 6 200 Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) Base-Emitter Voltage (Note 5) Collector-Cutoff Current (Note 5) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Typ — — — 290 90 200 Max — — — 450 250 600 Unit V V V — — 700 900 — mV VBE(ON) 580 — 660 — 700 720 mV ICBO ICBO fT CCBO — — 100 — — — 300 3.5 15 5.0 — 6.0 nA µA MHz pF NF — 2.0 10 dB Electrical Characteristics, PNP Section @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol (Note 5) V(BR)CBO (Note 5) V(BR)CEO (Note 5) V(BR)EBO (Note 5) hFE Min -50 -45 -5 220 Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) Base-Emitter Voltage (Note 5) Collector-Cutoff Current (Note 5) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: mV Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, Δf = 200Hz Typ — — — 290 -75 -250 Max — — — 475 -300 -650 Unit V V V — — -700 -850 — -950 mV VBE(ON) -600 — -650 — -750 -820 mV ICBO ICBO fT CCBO — — 100 — — — 200 3 -15 -4.0 — 4.5 nA µA MHz pF NF — — 10 dB mV Test Condition IC = -10μA, IB = 0 IC = -10mA, IB = 0 IE = -1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz VCE = -5V, IC = -200µA, RG = 2.0kΩ, f = 1.0kHz, Δf = 200Hz 5. Short duration pulse test used to minimize self-heating effect. 1,000 200 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 250 100 150 100 10 50 RθJA = 625°C/W 0 0 40 80 120 160 200 TA, AMBIENT TEMPERATURE (° C) Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device, Note 1) BC847PN Document number: DS30278 Rev. 12 - 2 1 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current (NPN) 2 of 4 www.diodes.com November 2008 © Diodes Incorporated BC847PN 1,000 0.4 0.3 VCE = 10V VCE = 5V VCE = 2V 100 0.2 0.1 0 10 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN) 1.0 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current (NPN) 100 0.5 TA = 150°C VCE = 5V -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1,000 hFE, DC CURRENT GAIN T A = 25° C fT, GAIN-BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.5 100 TA = 25°C T A = -50°C 10 IC IB = 10 0.4 0.3 TA = 25°C 0.2 T A = 150°C 0.1 T A = -50°C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current (PNP) 1 0 0.1 1,000 10 100 1 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP) 1,000 ft, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current (PNP) BC847PN Document number: DS30278 Rev. 12 - 2 100 3 of 4 www.diodes.com November 2008 © Diodes Incorporated BC847PN Ordering Information (Note 6) Part Number BC847PN-7-F Notes: Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K7P Date Code Key Year Code Month Code 2001 M 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S 2006 T Apr 4 May 5 K7P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2007 U 2008 V Jun 6 2009 W Jul 7 2010 X Aug 8 2011 Y Sep 9 2012 Z Oct O 2013 A 2014 B Nov N 2015 C Dec D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BC847PN Document number: DS30278 Rev. 12 - 2 4 of 4 www.diodes.com November 2008 © Diodes Incorporated