SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS FZT655 ✪ C 0.18 COMPLEMENTARY TYPE FZT755 - Normalised Gain (%) IC/IB=10 0.10 h V - (Volts) 100 0 0.01 0.1 1 10 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.2 1.2 IC/IB=10 VCE=5V - (Volts) 1.0 V 0.6 0.8 0.6 0.4 0.01 10 0.1 1 0.4 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test at Tamb=25°C td SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C tf µs VCE=10V ts µs PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=125V Emitter Cut-Off Current IEBO 0.1 µA VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=500mA, VCE =5V* Static Forward Current Transfer Ratio hFE 50 50 20 Transition Frequency fT 30 Output Capacitance Cobo ts IB1=IB2=IC/10 tr 3.0 TYP. MAX. 0.7 1 Switching time 0.6 DC 100ms 10ms 1ms 300µs 0.1 td 2.0 0.5 0.4 0.3 1.0 tf 0.2 0.1 0.01 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 V 0.8 C B 60 0.01 - (Volts) PARTMARKING DETAIL FZT655 VCE=5V tr 0 1 10 100 1000 0.01 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 IC=10mA, VCE =5V* IC=500mA, VCE =5V* IC=1A, VCE =5V* 300 20 MHz IC=10mA, VCE =20V f=20MHz pF VCB =10V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3 - 212 3 - 211 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ISSUE 3 FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS FZT655 ✪ C 0.18 COMPLEMENTARY TYPE FZT755 - Normalised Gain (%) IC/IB=10 0.10 h V - (Volts) 100 0 0.01 0.1 1 10 E 80 40 ABSOLUTE MAXIMUM RATINGS. 20 0 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.2 1.2 IC/IB=10 VCE=5V - (Volts) 1.0 V 0.6 0.8 0.6 0.4 0.01 10 0.1 1 0.4 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test at Tamb=25°C td SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C tf µs VCE=10V ts µs PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 0.1 µA VCB=125V Emitter Cut-Off Current IEBO 0.1 µA VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=500mA, VCE =5V* Static Forward Current Transfer Ratio hFE 50 50 20 Transition Frequency fT 30 Output Capacitance Cobo ts IB1=IB2=IC/10 tr 3.0 TYP. MAX. 0.7 1 Switching time 0.6 DC 100ms 10ms 1ms 300µs 0.1 td 2.0 0.5 0.4 0.3 1.0 tf 0.2 0.1 0.01 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 V 0.8 C B 60 0.01 - (Volts) PARTMARKING DETAIL FZT655 VCE=5V tr 0 1 10 100 1000 0.01 0.1 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 1 IC=10mA, VCE =5V* IC=500mA, VCE =5V* IC=1A, VCE =5V* 300 20 MHz IC=10mA, VCE =20V f=20MHz pF VCB =10V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% 3 - 212 3 - 211